Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAN217W
Applications Dimensions(Unit : mm) Land size figure(Unit : mm)
Rectifying small power
Features
Small mold type.(EMD3)
Structure
Construction
Silicon epitaxial
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj C
Tstg C
Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Reverse voltage (DC) 80
Forward current (Single) 300
Average rectified forward current 100
Surge current (t=1us) 4
Storage temperature
55 to
150
Conditions
Power dissipation 150
Junction temperature 150
Parameter
Paramete
r
Limits
Reverse voltage (repetitive) 80
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
4.0±0.1 2.0±0.05 φ1.55±0.1
　　　　　 0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0～0.1
φ1.50.1
0
1/2 2011.06 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN217W 　
Electrical characteristics curves
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
Rth(j-a)
Rth(j-c)
TRANSIENT
THAERMAL IMPEDANODE:Rth(°C/W)
1
1.2
1.4
1.6
1.8
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
5
10
110100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
8.3ms
Ifsm 1cyc
870
880
890
900
910
920
0
20
40
60
80
100
120
140
160
180
200
0.1
1
10
0 5 10 15 20
0.1
1
10
100
1000
10000
100000
0 20406080100120
Ta=150C
0.01
0.1
1
10
100
1000
0 200 400 600 800 1000 1200 1400
Ta=150C
0
5
10
0.1 1 10 100
t
Ifsm
0
1
2
3
4
5
6
7
8
9
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CY CLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(n s )
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
f=1MH
AVE:888.3
Ta=25C
V
F
=100mA
n=30pcs
Ta=25C
V
R
=80V
n=30pcs
AVE:20.90
AVE:0.595
Ta=25
C
f=1MHz
V
R
=0.5V
AVE:3.9 AVE:1.489
Ta=25C
V
R
=6V
I
F
=10mA
RL=100
n=10
p
cs
C=200pF
R=0
C=100pF
R=1.5k
AVE:6.48AVE:1.60
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(mA)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
Ta=-25
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=125
Ta=25
Ta=75
1ms
IM=1m I
F
=10m
300us
time
Mounted on epoxy board
2/2 2011.06 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes