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MOS FIELD EFFECT TRANSISTOR
μ
PA2520
N-CHANNEL MOS FET
FOR SWITCHING
DATA SHEET
Document No. G19186EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
2008
DESCRIPTION
The
μ
PA2520 is N-channel MOS Field Effect Transistor
designed for DC/DC converter and power management
applications of portable equipments.
FEATURES
• Low on-state resistance
R
DS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A)
R
DS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
• Pb-free (This product does not contain Pb in external electrode
and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±10 A
Drain Current (pulse) Note1 ID(pulse) ±40 A
Total Power Dissipation Note2 PT1 1.0 W
Total Power Dissipation (PW = 5 sec) Note2 PT2 2.2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note3 IAS 10 A
Single Avalanche Energy Note3 EAS 10 mJ
Notes 1. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100
μ
H
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
85
1
4
2.9±0.1
0.17±0.05
0 to 0.025
(0.3)
0.32±0.05
0.8±0.05 2.8±0.1
2.4±0.1
0.05 M S A
S
A
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.65
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G19186EJ1V0DS
2
μ
PA2520
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 5.0 A 4.4 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 10 A 9.4 13.2 mΩ
RDS(on)2 VGS = 4.5 V, ID = 5.0 A 12.5 17 mΩ
Input Capacitance Ciss VDS = 15 V, 1100 pF
Output Capacitance Coss VGS = 0 V, 240 pF
Reverse Transfer Capacitance Crss f = 1 MHz 88 pF
Turn-on Delay Time td(on) VDD = 15 V, ID = 5.0 A, 10 ns
Rise Time tr VGS = 10 V, 5.5 ns
Turn-off Delay Time td(off) RG = 10 Ω 40 ns
Fall Time tf 6.2 ns
Total Gate Charge QG VDD = 15 V, 10.8 nC
Gate to Source Charge QGS VGS = 5 V, 3.3 nC
Gate to Drain Charge QGD ID = 10 A 3.6 nC
Body Diode Forward Voltage Note VF(S-D) IF = 10 A, VGS = 0 V 0.82 V
Reverse Recovery Time trr IF = 10 A, VGS = 0 V, 26 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 19 nC
Gate Resistance RG f = 1 MHz 1.6 Ω
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
μ
Data Sheet G19186EJ1V0DS 3
μ
PA2520
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
0
04020 60 100 14080 120 160
120
100
80
60
40
20
TA - Ambient Temperature - °C
ID - Drain Current - A
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D(pulse)
I
D(DC)
Single Pulse
PW = 1
i
00 μs
1
i
m
i
s
1
i
0 m
i
s
1
i
00 m
i
s
5
i
s
R
DS(on)
Limited
(V
GS
= 1
i
0 V)
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
Power Dissipation Limited
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.1
1
10
100
1000
Single Pulse
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
R
th(ch-A)
= 125°C/Wi
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1
V
GS
= 3.0 V
3.6 V
Pulsed
3.4 V
3.2 V
10 V
4.5 V
4.0 V
3.8 V
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0
10
20
30
01234
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
VGS - Gate to Source Voltage - V
100
μ
1 m 10 m 100 m 1 10 100 1000
Data Sheet G19186EJ1V0DS
4
μ
PA2520
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) - Gate to Source Cut-off Voltage - V
0
1
2
3
-75 -25 25 75 125 175
V
DS
= 10 V
I
D
= 1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= 10 V
Pulsed
75°C
25°C
−55°C
T
A
= 125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
0.1 1 10 100
Pulsed
10 V
V
GS
= 4.5 V
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
0 5 10 15 20
I
D
= 10
A
Pulsed
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
-75 -25 25 75 125 175
Pulsed
V
GS
= 4.5 V, I
D
= 5.0
10 V, 10 A
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
10
100
1000
10000
0.1 1 10 100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
Data Sheet G19186EJ1V0DS 5
μ
PA2520
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VGS - Gate to Source Voltage - V
0
1
2
3
4
5
6
0 5 10 15
I
D
= 10 A
V
DD
= 6 V
15 V
24 V
QG - Gate Charge - nC
IF - Diode Forward Current - A
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Pulsed
10 V
V
GS
= 4.5 V
0 V
VF(S-D) - Source to Drain Voltage - V
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
μ
PA2520T1H-T1-AT Note
μ
PA2520T1H-T2-AT Note
Pure Sn
8 mm embossed taping
3000 p/reel 8-pin VSOF (2429)
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
μ
PA2520
The information in this document is current as of March, 2008. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":