BCV29, BCV49 NPN Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 High current gain Complementary types: BCV28, BCV48 (PNP) 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49 EG 1=B 2=C 3=E 4=C SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV29 BCV49 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 C Ptot 1 W Junction temperature Tj 150 C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV29, BCV49 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCV29 30 - - BCV49 60 - - BCV29 40 - - BCV49 80 - - 10 - - Collector-base breakdown voltage IC = 100 A, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector cutoff current nA ICBO VCB = 30 V, IE = 0 BCV29 - - 100 VCB = 60 V, IE = 0 BCV49 - - 100 Collector cutoff current A ICBO VCB = 30 V, IE = 0 , TA = 150 C BCV29 - - 10 VCB = 60 V, IE = 0 , TA = 150 C BCV49 - - 10 - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V BCV29 4000 - - BCV49 2000 - - BCV29 10000 - - BCV49 4000 - - BCV29 20000 - - BCV49 10000 - - BCV29 4000 - - BCV49 2000 - - DC current gain 1) IC = 10 mA, VCE = 5 V hFE DC current gain 1) IC = 100 mA, VCE = 5 V hFE DC current gain 1) IC = 0.5 A, VCE = 5 V - hFE hFE 1) Pulse test: t 300s, D = 2% 2 Jul-12-2001 BCV29, BCV49 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 150 - MHz Ccb - 3.5 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t 300s, D = 2% 3 Jul-12-2001 BCV29, BCV49 Collector cutoff current ICBO = f (T A) Total power dissipation Ptot = f(TS) VCB = V CEmax 10 4 1200 BCV 29/49 EHP00318 nA CBO mW max P tot 10 3 800 10 2 600 typ 400 10 1 200 0 0 15 30 45 60 75 90 105 120 10 0 C 150 TS 0 50 100 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V BCV 29/49 EHP00319 Ptot max Ptot DC D= 10 3 BCV 29/49 EHP00321 MHz tp tp T 150 TA Permissible pulse load 5 C fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 10 1 10 2 mA 10 3 C tp 4 Jul-12-2001 BCV29, BCV49 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 IC = f (VBEsat), hFE = 1000 10 3 C BCV 29/49 EHP00322 10 3 mA C 150 C 25 C -50 C 10 2 10 1 10 1 5 5 0.5 1.0 V 150 C 25 C -50 C 10 2 5 0 EHP00323 mA 5 10 0 BCV 29/49 10 0 1.5 0 1.0 2.0 V CEsat DC current gain hFE = f (I C) Emitter-base capacitance CEB = f (VEBO ) VCE = 5V CEB0 (CCB0 ) BCV 29/49 3.0 V BEsat Collector-base capacitance CCB = f (VCBO) 10 V EHP00324 10 6 h FE BCV 29/49 EHP00325 5 pF 10 5 125 C 25 C 5 CCB0 5 -55 C CEB0 10 4 5 0 10 -1 10 0 V 10 3 10 -1 1 10 V EB0 (V CB0 ) 10 0 10 1 10 2 mA 10 3 C 5 Jul-12-2001