BCV29, BCV49
1 Jul-12-2001
NPN Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV28, BCV48 (PNP)
21
3
VPS05162
2
Type Marking Pin Configuration Package
BCV29
BCV49 EF
EG 1 = B
1 = B 2 = C
2 = C 3 = E
3 = E 4 = C
4 = C SOT89
SOT89
Maximum Ratings
Parameter Symbol BCV29 BCV49 Unit
Collector-emitter voltage VCEO 30 60 V
Collector-base voltage VCBO 40 80
Emitter-base voltage VEBO 10 10
DC collector current IC500 mA
Peak collector current ICM 800
Base current 100
IB
Peak base current IBM 200
Total power dissipation, TS = 130 °C Ptot 1 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
20 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCV29, BCV49
2 Jul-12-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCV29
BCV49
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCV29
BCV49
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 10 - -
Collector cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
BCV29
BCV49
ICBO
-
-
-
-
100
100
nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
VCB = 60 V, IE = 0 , TA = 150 °C
BCV29
BCV49
ICBO
-
-
-
-
10
10
µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCV29
BCV49
hFE
4000
2000
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
BCV29
BCV49
hFE
10000
4000
-
-
-
-
DC current gain 1)
IC = 100 mA, VCE = 5 V
BCV29
BCV49
hFE
20000
10000
-
-
-
-
DC current gain 1)
IC = 0.5 A, VCE = 5 V
BCV29
BCV49
hFE
4000
2000
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
BCV29, BCV49
3 Jul-12-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 3.5 - pF
1) Pulse test: t ≤ 300µs, D = 2%
BCV29, BCV49
4 Jul-12-2001
Collector cutoff current ICBO = f (TA)
VCB = VCEmax
0
10
EHP00318BCV 29/49
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
200
400
600
800
mW
1200
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00319BCV 29/49
-6 -5
10
0
10s
0
10
2
10
5
5
10
-4
10
-3
10
-2
10
1
5
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
=
D
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00321BCV 29/49
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
fMHz
Ι
BCV29, BCV49
5 Jul-12-2001
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1000
0
10
EHP00323BCV 29/49
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
0
10
EHP00322BCV 29/49
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
DC current gain hFE = f (IC)
VCE = 5V
10
EHP00325BCV 29/49
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-base capacitance CCB = f (VCBO
)
Emitter-base capacitance CEB = f (VEBO)
10
EHP00324BCV 29/49
-1 1
10
V
100
5
10
pF
0
EB0
VV
CB0
CB0
C
CEB0
()
()
EB0
CCB0
C
