Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 40V
▼ Simple Drive Requirement RDS(ON) 28mΩ
▼ Fast Switching Characteristic ID27A
Description
□
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
AP9965GEH/J
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 40
Gate-Source Voltage +16
Continuous Drain Current 27
0.25
Storage Temperature Range
Operating Junction Temperature Range
Continuous Drain Current 17
Pulsed Drain Current180
-55 to 150
-55 to 150
31.25Total Power Dissipation
Thermal Data
Parameter
Linear Derating Factor
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
200903094
GDSTO-252(H)
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
S
G
D
GDSTO-251(J)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 28 mΩ
VGS=4.5V, ID=12A - - 32 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 2.5 V
gfs
Forward Transconductance VDS=10V, ID=18A - 21 - S
IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=32V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +30 uA
QgTotal Gate Charge2ID=18A - 8.5 14 nC
Qgs Gate-Source Charge VDS=30V - 1.6 - nC
Qgd
Gate-Drain ("Miller") Charge VGS=4.5V - 4.1 -
nC
td(on) Turn-on Delay Time2VDS=20V - 5.3 - ns
trRise Time ID=1A - 6.7 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20.5 - ns
tfFall Time RD=20Ω- 4.5 - ns
Ciss Input Capacitance VGS=0V - 610 980 pF
Coss Output Capacitance VDS=25V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF
RgGate Resistance f=1.0MHz - 1.8 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=18A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9965GEH/J
2
3.Surface mounted on 1 in2 copper pad of FR4 board
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.
Reverse Diode Drain Current
3
AP9965GEH/J
0
20
40
60
0.0 2.0 4.0 6.0 8.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150 oC 10V
7 .0V
5.0V
4.5 V
VG=3.0V
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25 oC 10V
7.0 V
5.0V
4.5 V
VG= 3.0 V
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I D=18A
VG=10V
0
5
10
15
20
25
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oC
Tj=150 oC
10.0
20.0
30.0
40.0
50.0
0 1020304050
ID , Drain Current (A)
RDS(ON) (mΩ)
VGS =10V
10
30
50
70
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=12A
TC=25 oC
VGS =4.5V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP9965GEH/J
0
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
T C=25 oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0 4 8 12 16 20
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
I D=18A
VDS =20V
VDS =25V
V DS =30V
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0
10
20
30
40
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS =5V
