ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features * 40V complementary device * Up to 5 amps peak current * High hFE * SOT236 package C1 B1 Applications * C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information Device Reel size Tape width Quantity per reel ZXTC2045E6TA 7" 8mm embossed 3,000 ZXTC2045E6TC 13" 8mm embossed 10,000 Device marking Pin out - top view 2045 Issue 1 - January 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTC2045E6 Absolute maximum ratings (each transistor) Parameter Symbol Limit Unit NPN PNP Collector-base voltage BVCBO 40 -40 V Collector-emitter voltage BVCEV 40 -40 V Collector-emitter voltage BVCEO 30 -30 V Emitter-base voltage BVEBO 7 -7 V ICM 5 -5 A Continuous collector current (a) IC 1.5 -1.5 A Base current IB 1 -1 A Power dissipation at TA =25C (a) (c) Linear derating factor PD 0.9 7.2 W mW/C Power dissipation at TA =25C (a) (d) Linear derating factor PD 1.1 8.8 W mW/C Power dissipation at TA =25C (b) (c) Linear derating factor PD 1.7 13.6 W mW/C Tj, Tstg -55 to +150 C Symbol Value Unit Junction to ambient (a) (c) RJA 139 C/W Junction to ambient (b) (c) RJA 73 C/W Junction to ambient (a) (d) RJC 113 C/W Peak pulse current Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t < 5 seconds. (c) For device with one active die. (d) For device with two active dice running at equal power. Issue 1 - January 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTC2045E6 Electrical characteristics (at TAMB = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown BVCBO voltage (-)40(*) V IC = (-)100A Collector-emitter breakdown voltage BVCEV (-)40(*) V IC = (-)1A 0.25V>VBE>1.0V ( 0.25V