Issue 1 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTC2045E6
Dual 40V complementary transistors in SOT23-6
Summary
BVCEV = 40V
BVCEO = 30V
Features
• 40V complementary device
• Up to 5 amps peak current
•High h
FE
• SOT236 package
Applications
• MOSFET and IGBT gate driving
Ordering information
Device marking
2045
Device Reel size Tape width Quantity per reel
ZXTC2045E6TA 7” 8mm embossed 3,000
ZXTC2045E6TC 13” 8mm embossed 10,000
C2
B2
E2
C1
B1
E1
Pin out - top view
ZXTC2045E6
Issue 1 - January 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings (each transistor)
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) As above measured at t < 5 seconds.
(c) For device with one active die.
(d) For device with two active dice running at equal power.
Parameter Symbol Limit Unit
NPN PNP
Collector-base voltage BVCBO 40 -40 V
Collector-emitter voltage BVCEV 40 -40 V
Collector-emitter voltage BVCEO 30 -30 V
Emitter-base voltage BVEBO 7-7 V
Peak pulse current ICM 5-5 A
Continuous collector current (a) IC1.5 -1.5 A
Base current IB1-1 A
Power dissipation at TA =25°C (a) (c)
Linear derating factor
PD0.9
7.2
W
mW/°C
Power dissipation at TA =25°C (a) (d)
Linear derating factor
PD1.1
8.8
W
mW/°C
Power dissipation at TA =25°C (b) (c)
Linear derating factor
PD1.7
13.6
W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient (a) (c) RθJA 139 °C/W
Junction to ambient (b) (c) RθJA 73 °C/W
Junction to ambient (a) (d) RθJC 113 °C/W
ZXTC2045E6
Issue 1 - January 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO (-)40(*)
NOTES:
(*) ( ) applies to PNP
VIC = (-)100A
Collector-emitter
breakdown voltage
BVCEV (-)40(*) VIC = (-)1A
0.25V>VBE>1.0V
( 0.25V<VBE<1.0V )
Collector-emitter
breakdown voltage
BVCEO (-)30(*) VIC = (-)10mA (†)
Emitter-base breakdown
voltage
BVEBO (-)7(*) (-)8.5(*) VIE = (-)100A
Collector cut-off current ICBO (-)<1(*) (-)20(*) nA VCB = (-)32V
Collector cut-off current ICES/R (-)<1(*) (-)20(*) nA VCE = (-)16V, Rⱕ 1kΩ
Emitter cut-off current IEBO (-)<1(*) (-)20(*) nA VEB = (-)6V
Collector-emitter
saturation voltage
VCE(SAT) (-)375(*) mV IC = (-)0.75A, IB =(-)15mA (†)
(†) Measured under pulsed conditions. Pulse width ⱕ 300 s; duty cycle ⱕ 2%.
Base-emitter saturation
voltage
VBE(SAT) (-)1.2(*) VIC =(-) 0.75A, IB =(-)15mA(†)
Static forward current
transfer ratio
hFE 180 300 500 IC = (-)100mA, VCE =(-)2V(†)
ZXTC2045E6
Issue 1 - January 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
For international sales offices, agents and distributors please go to www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package details - SOT23-6
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM Millimeters Inches
Min. Max. Min. Max.
A 0.90 1.45 0.354 0.0570
A1 0.00 0.15 0.00 0.0059
A2 0.90 1.30 0.0354 0.0511
b 0.35 0.50 0.0078 0.0196
C 0.09 0.26 0.0035 0.0102
D 2.70 3.10 0.1062 0.1220
E 2.20 3.20 0.0866 0.1181
E1 1.30 1.80 0.0511 0.0708
L 0.10 0.60 0.0039 0.0236
e 0.95 REF 0.0374 REF
e1 1.90 REF 0.0748 REF
L 0° 30° 0° 30°
