SCH1406
Rev.0 I Page 1 of 4 I www.onsemi.com
Ordering number : EN7749A
SCH1406
Features
•Low ON-resistance.
• Ultrahigh-speed switching.
•1.8V dri ve.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID1.7 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4.8 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=1A 1.9 2.8 S
RDS(on)1 ID=1A, VGS=4V 160 210 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=0.5A, VGS=2.5V 200 280 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 280 390 mΩ
Marking : KF Continued on next page.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
SCH1406/D
SCH1406
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page.
Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 100 pF
Output Capacitance Coss VDS=10V, f=1MHz 22 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 5.5 ns
Rise T ime trSee specified Test Circuit 18 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall T ime tfSee specified Test Circuit 8 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.2A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.2A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.2A 0.4 nC
Diode Forward Voltage VSD IS=--1.2A, VGS=0V 0.9 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7028-002
1.6
1.6
1.5
0.05
0.5
0.05
0.56
0.25
0.2 0.2
13
2
645
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
0.4
0.8
1.6
2.0
0.2
1.2
0
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
ID -- VDS
VGS=1.0V
1.5V
2.5V
IT02983
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID -- VGS
VDS=10V
25
°
C
--25°C
25
°
C
Ta=75°C
75°C
Ta=
--25°C
IT02984
3.0V
4.0V
6.0V
10.0V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1A
RL=10Ω
VDD=10V
VOUT
SCH1406
VIN
4V
0V
VIN
SCH1406
Rev.0 I Page 3 of 4 I www.onsemi.com
IT07148
012345
0
1
2
3
4
5
6
7
8
9
10 VGS -- Qg
VDS=10V
ID=1.2A
IT07147
2
7
5
3
10
7
5
3
2
100 SW Time -- ID
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
IT02989
IT02987
0.01 0.1
23 57
0.001 23 57 1.0
23 57 32
0.1 1.0
23 57 23 5
0.01
0.1
1.0
7
5
3
2
7
5
3
2
7
5
3
2
y
fs -- ID
VDS=10V
75
°
C
Ta= --25°C
02468101214161820
10
100
3
2
7
5
3
2
Ciss, Coss, Crss -- VDS f=1MHz
Ciss
Coss
Crss
IT02990
IT02988
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
5
1.0
7
5
3
2
7
5
3
2
3
2
IS -- VSD VGS=0V
--25
°
C
25
°
C
Ta=75
°
C
A S O
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01 0.1 1.00.01 23 5723 5723 57 10 23
IDP=4.8A
ID=1.7A
Operation in this
area is limited by RDS(on).
100µs
100ms
DC operation (Ta=25°C)
1ms
10ms
PW≤10µs
25
°
C
Forward T ransfer Admittance, yfs -- S
Source Current, IS -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
IT02986
100
150
200
250
300
350
50
ID=1.0A, VGS=4.0V
ID=0.5A, VGS=2.5V
0246810
RDS(on) -- VGS
IT02985
100
150
200
250
300
350
400
50
Ta=25°C
ID=0.5A
1.0A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
SCH1406
Rev.0 I Page 4 of 4 I www.onsemi.com
IT07149
0
020 40
0.2
0.4
0.6
0.8
1.0
60 80 100 120 140 160
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board (900mm
2
✕0.8mm)
SCH1406/D
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