Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3 1Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
•225 mW Rating on FR−4 or FR−5 Board
•Zener Breakdown Voltage Range − 2.4 V to 75 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Peak Power − 225 W (8 X 20 s)
•Pb−Free Package is Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL ≤ 25°CPpk 225 Watts
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg −65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode 1
Anode
BZX84CxxxET1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
xxx = Specific Device Code
M = Date Code
xxxM
BZX84CxxxET3 SOT−23 10,000/Tape & Reel
3
12
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†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxET1G SOT−23
(Pb−Free) 3000/Tape & Reel
BZX84C2V4ET1 Series
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2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
VZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
Device
VZ1 (V)
@I
ZT1 =5mA
(Note 4) ZZT1
()
@I
ZT1
VZ2 (V)
@I
ZT2 =1mA
(Note 4) ZZT2
()
@I
ZT2
VZ3 (V)
@I
ZT3=20 mA
(Note 4) ZZT3
()
@
Max
Reverse
Leakage
Current
VZ
(mV/k)
@ IZT1=5 mA C (pF)
@
VR=0
Device
D
ev
i
ce
Mark-
ing Min Nom Max
@
I
ZT1
=
5 mA Min Max
@
I
ZT2
=
1 mA Min Max
@
IZT3=
20 mA VR
(V)
IR
A@Min Max
V
R =
0
f =
1 MHz
BZX84C3V3ET1 BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450
BZX84C4V7ET1 BA9 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260
BZX84C5V1ET1 BB1 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225
BZX84C5V6ET1 BB2 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200
BZX84C6V2ET1, G* BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8ET1 BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5ET1 BB5 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C10ET1 BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C12ET1 BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C15ET1 BC3 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
BZX84C16ET1 BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18ET1 BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C24ET1 BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
@I
ZT1
VZ2 Below
@I
ZT2 =
0.1 mA ZZT2
Below
@I
ZT4
VZ3 Below
@I
ZT3 =10m
AZZT3
Below
@I
ZT3
Max
Reverse
Leakage
Current
VZ
(mV/k) Be-
low
@ IZT1 = 2
mA C (pF)
@ VR
=0
Device
D
ev
i
ce
Mark-
ing Min Nom Max
@
I
ZT1
=
2 mA Min Max
@
I
ZT4
=
0.5 mA Min Max
@
I
ZT3
=
10 mA VR
(V)
IR
A@Min Max
=
0
f =
1 MHz
BZX84C27ET1 BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C43ET1 BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
*The “G” suffix indicates Pb−Free package available.
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
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3
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
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4
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
IR, LEAKAGE CURRENT ( A)µ
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
−55°C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 9. 8 × 20 s Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (s)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE IRSM/2 @ 20 s
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 s
TA = 25°C
TA = 25°C
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5
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AJ
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
BZX84C2V4ET1 Series
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6
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BZX84C2V4ET1/D
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