2N6394MCR220=5
thru MCR220=7
2N6399MCR220”9
\\#:F*,5399
Forward Current ~~~f~s’l 25°C IT(RMS)
(All Conduct~:{*,@tit&s)
,,..
Peak Forwar%#&Current ITSM
12t
(T~ff-*0 to +.125°C, t=1.0 to 8.3 ms)
,). ..
~. ~~
~~wd Peak Gate Power PGM
,
IFohard A“erage Gate Power IpG(A”)
Forward Peak Gate Current IGM
Operating Junction Temperature Range TJ
Storage Temperature Range T~tQ
Value Unit
volts
50
100
200.
300
400
500
600
700
800
12 Amps
100 Amps
I
20 Watts
0.5 Watt
2.0 Amps
40 to +125 Oc
4oto +150 Oc
THERMAL CHARACTERISTICS
Characteristic Symbol IMax Unit
Thermal Resistance, Junction to Case. RejC 2.0 Oclw
~Nk
PIN 1, CATHODE
2. ANOOE
3. GATE
4. ANOOE
All JEDEC dimerlsionsa[ld tlotes apply
MILLIMETERS INCHES
OIM MIN MAX MIN MAX
A14.23 15,87 0.560 0.625
B9.66 10.66 0.3B0 0.420
c3.56 4.82 0.140 0.190
00.51 1.14 0.020 0045
F3531 3.733 0.139 0.147
G2.29 2,79 0.090 0.110
H6.35 -0.250
J0.3 I1.14 0.012 0.045
K12.70 14.27 0.500 0.562 “
L1.14 1.77 0.045 0.070
N4.83 5.33 0,190 0210
.3 2.54 3.04 0.100 0.120
R2.04 2.92 0.080 0.115
s
__J~ _~ 0.020 0.055
T5.B5 6.85 0.230 0.270
CASE 221-02
TO 220 AB
“) VRRM for all typas can be applied on acontinuous dc basis without incurring damage.
Retings applv for zero or negative gate voltage. Devices should riot be tested for blocking
capability in amanner such that the voltage supplied exceeds the rated blocking voltage.
*Indicates JEDEC Registered Data.
ATrademark of Motorola Inc, tiOTOROLA (“Nc., 1975 DS 6565 R
I
ELECTRICAL CHARACTER ISTICS (Tc =25°C uniess otherwise lted.)
Characteristic
‘Peak Forward Blocking Voltage
(TJ =125°C) 2N6394
2N6395
2N6396
MC R220-5
2N6397
MC R220-7
2N6398
MC R220-9
2N6399
*Peak Forward Blocking Current
(Rated VDRM @TJ =125°C)
*Peak Reverse Blocking Current
(Rated VRRM @TJ =125°C)
*Forward “On” Voltage
(ITM =24 APeak)
*Gate Trigger Current (Continuous dc)
(Anode Voltage =12 Vdc, RL =100 Ohms)
*Gate Trigger Voltage (Continuous dc)
(Anode Voltage= 12 Vdc, RL =100 Ohms)
*Gate Non-Trigger Voltage
(Anode Voltage =Rated VDRM, RL =100 Ohms, TJ =125°C)
*Holding Current
(Anode Voltage =12 Vdc)
Turn-On Time
(lTM= 12A, lGT=40mAdc) .\t:
.. .
,i::,
Turn-Off Time (VDRM =rated voltage) .‘...;:).
.+’:),Ibk
~:{.
(ITM=12A, IR= 12A) S!wi,:<!$
~{i.:“~‘.;f.\<.
(lTM=12A, lR=12A, TJ=1250C)’ ~..l,)~“+!*X
,,,!.; *,,? .,
>.‘..,,.: ,<~
Forward Voltage Application Rate .&a,$>$:,,..b~ati.:
..,,~,~~~y>-.!:
(TJ =125°C) $,\\
., .,~:<\:y\3.:,. $,
..,?.‘,~t$.~~
~,,$1:*.
Indicates JEDEC Registered Data. ,, %>++,‘~+ ‘3
~:?.’~“ ‘:’Q*.?W
.!.
G95 I1I1II\I\I
+9001,0 2.0 3.0 4.0 5.0 6,0 7.0 8.0
IT(AV), AVERAGEON-STATEFORWAROCURRENT(AMP)
Symbol Min Typ
VDRM
50 —
100 —
200 –
300 —
400 —
500 —
I600
700 I—
800 —
IDRM ——
II
#,1
-1
T
1.5 volts
—volts
f
*
2.0 ps
Ps
—
—
—Vfps
FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION
20 II
18 –n 1800
G
~16 A.+ F
z14 —a=coNBucTloN
ANGLE 900
E600
312
~
~10 1
a
a
R8.0
>
:6.0
>TJ =1250C
~4.0
2.0 .
001.0 2.0 3.0 4.0 5,0 8.0 7,0 8.0
IT(AV), AVERAGE ON-STATEFORWAROCURRENT(AMP)
@MOTOROLA Semiconductor Products Inc.
FIGURE 3 – ON-STATE CHARACTERISTICS
<
FIGURE 4 – MAXIMUM NON-REPETITIVE SURGE CURRENT
‘-u”’’”%
$,3
,Ji +1
IT
REVERSE FORWARD
BLOCKING BREAKOVER
POINT
REGION i
–v 4+V
1~~~ v~~~
FORWARD
REVERSE BLOCKING
AVALANCHE REGION
—,
REGION 1.
I
FIGURE 6 – THERMAL RESPONSE
, , ,, I I I I , , JI , , I
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 l.Ok 2.Ok3.Ok 5,0k 10k
“@
MOTOROLA Semiconductor Prwducts Inc.
1’ FIGURE 7 – PULSE TRIGGER CURRENT
,1 1 =1 1I
3.0
-60 -40 -20 0 20 40 60 80 100
&@MOTOROLA Semiconductor Producfs Inc. —
,,,,.
,, Printed in SwiEerla”d
,, ,. .”.,.: OS-6565-RI
.’, ,,
,,:‘..;
,:.k~. -’.,-~..:... .. ,. .- ., ,.’,
