Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 18
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 11
IDM Pulsed Drain Current 72
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 450 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
oC
A
POWER MOSFET
THRU-HOLE (TO-254AA)
04/20/07
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Product Summary
Part Number RDS(on) ID
IRFM240 0.18 Ω 18A
For footnotes refer to the last page
IRFM240
JANTX2N7219
JANTXV2N7219
REF:MIL-PRF-19500/596
200V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nDynamic dv/dt Rating
n Light-weight
Features:
TO-254AA
PD - 90555E
IRFM240
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.18 VGS = 10V, ID = 11A
Resistance — — 0.25 VGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.1 — — S VDS > 15V, IDS = 11A
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V ,VGS=0V
— — 250 VDS = 160V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 60 VGS =10V, ID = 18A
Qgs Gate-to-Source Charge — — 14.6 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 37.6
td(on) Turn-On Delay Time — — 20 VDD = 100V, ID = 18A,
trRise Time — — 105 VGS =10V, RG = 9.1Ω
td(off) Turn-Off Delay Time — — 58
tfFall Time — — 67
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 1300 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 400 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 130 —
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 1.0
RthJS Case-to-sink — 0.21 —
RthJA Junction-to-Ambient — — 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 18
ISM Pulse Source Current (Body Diode) —— 72
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 18A, VGS = 0V
trr Reverse Recovery Time — — 500 ns Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 5.3 µC VDD ≤ 50V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Ω
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
www.irf.com 3
IRFM240
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFM240
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
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IRFM240
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFM240
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
.
VGS
www.irf.com 7
IRFM240
ISD ≤ 18A, di/dt ≤ 150A/µs,
VDD ≤ 200V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 1.3mH
Peak IL = 18A, VGS = 10V
Footnotes:
Case Outline and Dimensions — TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C
>@
>@
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
>@
0$;
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
127(6
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2007