OL DE ff 387508) OO1aL41 5 i 3875081 GE SOLID STATE Standard Power MOSFETs O1E 18141 DT S9-// RFM10N12, RFM10N15, RFP10N12, RFP10N15 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V 150 V fos(on): 0.3. Q Features: a SOA is power-dissipation limited m Nanosecond switching speeds a Linear transfer characteristics a High input impedance Majority carrier device The RFM10N12 and RFM10ON15 and the RFP10N12 and RFP10N15* are n-channel enhancement-made silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directiy from integrated circuits. The RFM-types are supplied in the JEDEC TO-204AA steel package and the RFP-types In the JEDEC TO-220AB plastic package. *The RFM and RFP series were formerly RCA developmental numbers TA9192 and TA9212, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): . RFM10N12 DRAIN-SOURCE VOLTAGE ........... Voss 120 DRAIN-GATE VOLTAGE (Rgs=1 MQ) ... Vocr 120 GATE-SOURCE VOLTAGE ........ aa. Ves DRAIN CURRENT, RMS Continuous ..... Ib Pulsed ......-..ee00e fom POWER DISSIPATION @ Te=25C ....... Pr 75 Derate above Tc=25C 0.6 OPERATING AND STORAGE TEMPERATURE ........ cece cence Th Tata ee File Number 1445 s 92CS-S571 N-Channel Enhancement Mode TERMINAL DESIGNATIONS RFM10N12 RFM10N15 SOURCE GATE RFP10N12 RFPION15S DRAIN (FLANGE } 92CS-3760! JEDEC TO-204AA (FLANGE! CYL Ou: X/ C] TOP VIEW E eate 92CS-39528 JEDEC TO-220AB RFMI0N15 RFP10N12 RFPION15 150 120 150 Vv 150 120 150 Vv +20 v 10 A 25 - A 75 60 60 Ww 0.6 0.48 0.48 wre -55 to +150 C OL DE QP3875081 0016142 7 i 3875081 GE SOLID STATE O1E 18142 oT-S9-l! _ Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 ELECTRICAL CHARACTERISTICS At Case Temperature ( Tc) = 25C unless otherwise specitied LIMITS RFM10N12 RFM10N15 TEST RFEP10N12 RFPI10N15 CHARACTERISTICS SYMBOL CONDITIONS MIN. | MAX.} MIN. | MAX.| UNITS . Ip =1mA Drain-Source Breakdown Voltage BVpss Ves = 0 120 - 150 - v es Vas = Vos Gate Threshold Voltage Vesa 2 4 2 4 Vv lp =2mA Vos = 100 V _ 1 - - Zero Gate Voltage Drain Current Vos = 120 V = = 1 loss Te = 126C uA Vos = 100 V _- 50 - - Vos = 120 V _ - ~_ 50 Gate-Source Leakage Current less vee ** v _ 100 100 nA Ds Ve = 0 Vv ~ 18 ~ 8 Drain-Source On Voltage Vos(on)* ss Vv Jo =10A _ 4 _ 4 Ves =10V i in-! i Ip=SA Static Drain-Source On Resistance ros(on)* Dp _ 03 _ 03 Q Vas =10V Forward Transconductance Ots Vos = 10 V 2 _ 2 - mho lb=5A Input Capacitance Cis Vos=25 V - 650 _ 650 Output Capacitance Coss Ves =OV _ 230 _ 230 pF Reverse Transfer Capacitance Crs f= 1MHz, _ 60 = 60 Turn-On Delay Time ta(on) Voo=75 V 40(typ.)| 60 | 40(typ.)| 60 Rise Time t b=5A 165(typ.)| 250 | 165(typ.)| 250 ns Turn-Off Delay Time ta(off) Roen = Ras = 50 2] 9O(typ.)| 135 | 90(typ.)}| 135 Fall Time t Ves = 10 V 9O(typ.)| 135 | 90(typ.) | 135 Thermal Resist RFMIONI6 7 [te | | te ermal esistance ROIC C/W Junction-to-Case RFPIONi2, _ 2.083 _ 2.083 RFP10N15 , *Pulsed: Pulse duration = 300 ys max., duly cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST RFM10N12 RFM10N15 CHARACTERISTIC SYMBOL | conDITIONS RFP10N12 RFPION1S | UNITS MIN. MAX. MIN. MAX. Diode Forward Voitage Vso Isp=5 A = 1.4 - 1.4 Vv - ' i=4 A Reverse Recovery Time te die/dh=100 A/yes 200(typ) 200(typ} ns * Pulse Test: Width < 300 ys, Duty Cycle < 2%. ooooo 85 _e : Ol ve ff aa7soa1 OO18L43 4 i 3875081 G E SOLID STATE O1E 18143 DT? 39~// Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 CASE TEMPERATURE (Tg}#25 C (CURVES MUST BE OERATED LINEARLY WITH INCREASE IN TEMPERATURE) 5 OPERATION IN THIS AREA IS LIMITED BY ros {on} ORAINCURRENT ([Ip}A Vpss (MAX) #1ZOV (RFMIONIZ, REPIONI2) Ag (MAX.)= ISOV (RFMIONIS, RFPIONIS) 2 2 4 6 8 2 4 648 2 4 6 @ 1 10 100 1000 ORAIN-TO-SOURCE VOLTAGE (Vpg) 92CS- 36157RI Fig. 1 Maximum safe operating areas for all types. =Yos <1ma 3205-34454A2 JUNCTION TEMPERATURE (TyJ C. 9209-34559 50 100. CASE TEMPERATURE (T.1-* Fig. 2 Power vs. temperature derating curve for all types. Fig. 3 Typical normalized gate threshold voltage as a function of junction tamperature for ali types. TySA Vege lov Yos* PULSE TEST PULSE DURATION: 8045 BuTY CYCLE <2% rv 2 2 7 ae C4 z 6 NORMALIZED DRAWN~TO~ sounce [rosten ON- STATE ORAIN CURRENT [Zplon MUNCTION TEMPERATURE (1))~%C - GATE-TO- SOUR A Inv _. _ 9208-36178 . TO- SOURCE YOLTAGE (Veg wees-3426081 Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. 5 Typical transfer characteristics for all types. perature for all types. 3875081 GE SOLID STATE gy pe f}3a7soa, ooraryy g WI S9-// Standard Power MOSFETs RFM10N12, RFM10N15, RFP10N12, RFP10N15 t T T 10 PULSE TEST 8Yoss PULSE GATE SOURCE de r VOLTAGE 125 Yoo = Yoss AL = 150 Yoo = Voss z a tg (REF) = 1 ma 462 3S = 3 3 Vag = -10V 3 T 7% 5 2 e u FoL 0.78 Voss 075 Voss. 449 g 050 Voss 050 Voss, 2 a7 5 0 25 Voss 25 Voss: z a2 2 a ORAIN SOURCE VOLTAGE a * o Ig (REF) Ig (REF) a 20 Reh ig ACTH ! 2 3 6 TIME Microseconds 20837689 ORAIN-TO-SOURCE VOLTAGE {Vps-V 92C8-34362RE Fig. 6 - Normalized switching waveforms torconstant gate-current drive Fig. 7 Typical saturation characteristics for all types. Vgstlov PULSE TEST PULSE DURATION= 80,3 DUTY CYCLE x 2% oO to 40 50 60 70 ORAIN CURRENT [Ip }A e2cs-s4738 DRAIN-TO-SOURCE VOLTAGE(Vps)V ace _aeise Fig. 8 - Typical drain-to-source on resistance as a function drain Fig. 9 Capacitance as a function of drain-to-source voltage for current for ail types. all types. isa VggtlOv PULSE TEST PULSE DURATION +805 DUTY CYCLE < 2% TO SCOPE Vv = Yoo x 7SVv KELVIN CONTACT TENPERATURE (Tc 125C FORWARD TRANSCONDUCTANCE ( 9h}mho >= 9208-37369 ? 8 . 9208-35158 Fig. 10 - Typical forward transconductance as a function of drain current for all types. 2 3 4 ORAIN CURRENT a Fig. 11 Switching Time Test Circuit eee E - - moe ae om wee 87