Rev. 1.3 Copyright © 2014 by Silicon Labo ratories Si5356A
Si5356A
I2C PROGRAMMABLE, ANY-FREQUENCY 1–200 MHZ,
QUAD FREQUENCY 8-OUTPUT CLOCK GENERATOR
Features
Applications
Description
The Si5356 is a highly flexible, I2C programmable clock generator capable of
synthesizing four completely non-integer related frequencies up to 200 MHz. The
device has four banks of outputs with each bank supporting two CMOS outputs at
the same frequency. Using Silicon Laboratories' patented MultiSynth fractional
divider technology, all outputs are guaranteed to have 0 ppm frequency synthesis
error regardless of configuration, enabling the replacement of multiple clock ICs
and crystal oscillators with a single device. Each output bank is independently
configurable to support 1.8, 2.5, or 3.3 V. The device is programmable via an I2C/
SMBus-compatible serial interface and supports operation from a 1.8, 2.5, or
3.3 V core supply.
Functional Block Diagram
Generates any frequency from 1 to
200 MHz on each of the 4 output banks
Programmable frequency configuration
Guaranteed 0 ppm frequency synthesis
error for any combination of frequencies
25 or 27 MHz xtal or 5–200 MHz input clk
Eight CMOS clock outputs
Easy to use programming software
Configurable “triple A” spread spectrum:
any clock, any frequency, and with any
spread amount
Programmable output phase adjustment
with <20 ps error
Interrupt pin indicates LOS or LOL
OEB pin disables all outputs or per
bank OEB control via I2C
Low jitter: 50 ps pk-pk (typ), 75 ps
pk-pk period jitter (max)
Excellent PSRR performance
eliminates need for external power
supply filtering
Low power: 45 mA (core)
Core VDD: 1.8, 2.5, or 3.3 V
Separate VDDO for each bank of
outputs: 1.8, 2.5, or 3.3 V
Small size: 4x4 mm 24-QFN
Industrial temperature range:
–40 to +85 °C
Printers
Audio/video
DSLAM
Storage area networks
Switches/routers
Servers
Ordering Information:
See page 23.
Pin Assignments
XA
CLK5
CLK4
VDDOC
VDDOB
CLK3
CLK2
VDD VDD
P2
CLK6
CLK7
LOS
P3
VDDOA
CLK1
CLK0
GND
VDDOD
GND
GND
XB
P1
CLKIN
P4
P5
Top View
1
6
5
4
3
2
712111098
18
13
14
15
16
17
24 1920212223
XA
CLK5
CLK4
VDDOC
VDDOB
CLK3
CLK2
VDD VDD
SCL
CLK6
CLK7
INTR
SDA
VDDOA
CLK1
CLK0
GND
VDDOD
GND
GND
XB
I2C_LSB
CLKIN
SSC_DIS
OEB
Top View
1
6
5
4
3
2
712111098
18
13
14
15
16
17
24 1920212223
Si5356A
2 Rev. 1.3
Si5356A
Rev. 1.3 3
TABLE OF CONTENTS
Section Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.2. Input Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.3. Breakthrough MultiSynth Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.4. Frequency Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.5. Configuring the Si5356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.6. Output Phase Adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.7. CMOS Output Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.8. Jitter Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.9. Status Indicators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.10. I2C Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.11. Spread Spectrum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.12. Power Supply Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
4. Si5356 Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
6.1. Evaluation Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
7. Package Outline: 24-Lead QFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
8. Recommended PCB Land Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
9. Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
9.1. Si5356A Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
9.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
10. Device Errata . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Si5356A
4 Rev. 1.3
1. Electrical Specifications
Table 1. Recommended Operating Conditions
(VDD = 1.8 V –5% to +10%, 2.5 or 3.3 V ±10%, TA= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Temperature TA–40 85 oC
Core Supply Voltage VDD 2.97 3.3 3.63 V
2.25 2.5 2.75
1.71 1.8 1.98
Output Buffer Supply Voltage VDDO 1.71 3.63 V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating
conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless
otherwise noted.
Table 2. DC Characteristics
(VDD = 1.8 V –5% to +10%, 2.5 or 3.3 V ±10%, TA= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Core Supply Current IDD 100 MHz on all outputs,
25 MHz refclk
—4560mA
Output Buffer Supply Current IDDOx CMOS, 50 MHz
15 pF load
—69mA
CMOS, 200 MHz
3.3 V VDD0
—1318mA
CMOS, 200 MHz
2.5 V
—1014mA
CMOS, 200 MHz
1.8 V
—710mA
High Level Input Voltage VIH CLKIN, I2C_LSB 0.8 x VDD —3.63 V
SSC_DIS, OEB 0.85 1.3 V
Low Level Input Voltage VIL CLKIN, I2C_LSB –0.2 0.2 x VDD V
SSC_DIS, OEB 0.3 V
Clock Output High Level Output
Voltage
VOH Pins: CLK0–7
IOH =–4 mA
VDDO – 0.3 V
Clock Output Low Level Out-
put Voltage
VOL Pins: CLK0–7
IOL =+4mA
——0.3V
INTR Low Level Output Voltage VOLINTR Pin: INTR
IOL =+3mA
0—0.4V
SSC_DIS, OEB Input
Resistance
RIN —20k
Si5356A
Rev. 1.3 5
Table 3. AC Characteristics
(VDD = 1.8 V –5% to +10%, 2.5 or 3.3 V ±10%, TA= –40 to 85 °C)
Parameter Symbol Test Condition Min Typ Max Unit
Input Clock
Clock Input Frequency FIN 5—200MHz
Clock Input Rise/Fall Time TR/TF 20–80% VDD ——2.3 ns
10–90% VDD —— 4 ns
Clock Input Duty Cycle DC Input tr/tf within specified
limits shown above
40 60 %
Clock Input Capacitance CIN —2— pF
Output Clocks
Clock Output Frequency FO 1—200MHz
Clock Output Frequency Synthesis
Resolution
FRES See "3.4. Frequency Con-
figuration" on page 11
001ppb
Output Load Capacitance CL 15 pF
Clock Output Rise/Fall Time TR/TF 20 to 80% VDD,
CL = 15 pF
——2.0 ns
Clock Output Rise/Fall Time TR/TF 20 to 80% VDD,
CL = 2 pF
0.45 0.85 ns
Clock Output Duty Cycle DC Measured at VDD/2 45 50 55 %
Powerup Time TPU POR to output clock valid 2 ms
Output Enable Time TOE ——10 µs
Output-Output Skew TSKEW Outputs at same
frequency, fOUT > 5 MHz
–150 +150 ps
Period Jitter JPPKPK 10000 cycles* 50 75 ps pk-pk
Cycle-Cycle Jitter JCCPK 10000 cycles* 40 70 ps pk
Phase Jitter JPH 12 kHz to 20 MHz 2 ps rms
PLL Loop Bandwidth FBW —1.6— MHz
Interrupt Status Timing
CLKIN Loss of Signal Assert Time tLOS —2.6 5 µs
CLKIN Loss of Signal Deassert
Time
tLOS_b 0.01 0.2 1 µs
*Note: Measured in accordance to JEDEC Standard 65.
Si5356A
6 Rev. 1.3
Table 4. Crystal Specifications
Parameter Symbol Test Condition Min Typ Max Unit
Crystal Frequency FXTAL Option 1 25 MHz
Option 2 27 MHz
Load Capacitance
(on-chip differential)
cL (supported)* 11 12 13 pF
cL (recommended) 17 18 19 pF
Crystal Output
Capacitance
CO—— 5 pF
Equivalent Series
Resistance
ESR 25 MHz 100
27 MHz 75
Crystal Drive Level
Rating
dL100 µW
*Note: See "AN360: Crystal Selection Guide for Si533x and Si5355/56 Devices" for how to adjust the registers to
accommodate a 12 pF crystal CL
Table 5. I2C Specifications (SCL,SDA)1
Parameter Symbol Test Condition Standard Mode Fast Mode Unit
Min Max Min Max
LOW level input
voltage
VILI2C –0.5 0.3 x VDDI2C –0.5 0.3 x VDDI2C2V
HIGH level input
voltage
VIHI2C 0.7 x VDDI2C 3.63 0.7 x
VDDI2C2
3.63 V
Hysteresis of
Schmitt trigger
inputs
VHYS N/A N/A 0.1 V
LOW level output
voltage (open drain
or open collector)
at 3 mA sink
current
VOLI2C2 V
DDI2C2= 2.5/3.3 V 0 0.4 0 0.4 V
VDDI2C2= 1.8 V N/A N/A 0 0.2 x VDDI2C V
Input current III2C –10 10 –10 10 µA
Capacitance for
each I/O pin
CII2C V
IN = –0.1 to VDDI2C —4 4pF
I2C Bus timeout —25352535ms
Notes:
1. Refer to NXP’s UM10204 I2C-bus specification and user manual, revision 03, for further details.
2. Only I2C pull up voltages (VDDI2C) of 1.71 to 3.63 V are supported. Must write register 27[7] = 1 if the I2C bus voltage is
less than 2.25 V.
Si5356A
Rev. 1.3 7
Table 6. Thermal Conditions
Parameter Symbol Test Condition Value Unit
Thermal Resistance
Junction to Ambient
JA Still Air 37 °C/W
Thermal Resistance
Junction to Case
JC Still Air 25 °C/W
Table 7. Absolute Maximum Ratings1,2,3,4
Parameter Symbol Rating Unit
Supply Voltage Range VDD –0.5 to +3.8 V
Input Voltage Range (all pins except pins 1,2,5,6) VI–0.5 to 3.8 V
Input Voltage Range (pins 1,2,5,6) VI2 –0.5 to 1.3 V
Output Voltage Range VO–0.5 to VDD + 0.3 V
Junction Temperature TJ–55 to +150 oC
ESD Tolerance HBM 2.5 kV
CDM 550 V
MM 175 V
Latch-up Tolerance LU JESD78 Compliant
Soldering Temperature (Pb-free profile)5TPEAK 260 oC
Soldering Temperature Time at TPEAK
(Pb-free profile)5
TP20–40 sec
Notes:
1. Permanent device damage may occur if the Absolute Maximum Ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to maximum rating
conditions for extended periods may affect device reliability.
2. 24-QFN package is RoHS compliant.
3. For more packaging information, go to www.silabs.com/support/quality/pages/RoHSInformation.aspx.
4. Moisture sensitivity level is MSL3.
5. The device is compliant with JEDEC J-STD-020.
Si5356A
8 Rev. 1.3
2. Typical Application Circuits
I2C Bus
I2C Address = 111 0000 (0x70)
or 111 0001 (0x71)
+3.3V
1k1k1k
Ethernet
PHY
Si5356
4-Port Ethernet Switch/Router
33/66 MHz 125 MHz
x
x
Ethernet
PHY
Ethernet
PHY
Ethernet
PHY
22
18
14
10
9
25 MHz
CLK0
CLK2
CLK4
CLK6
CLK7
21
CLK1
17
CLK3
13
CLK5
Ethernet
Switch
MCU/
Processor
16 15 1120247
VDDOA
VDDOB
VDDOC
VDDOD
VDD
VDD
1
2
4
25 MHz
XTAL XA
XB
CLKIN 25 MHz
25 MHz
25 MHz
23
GND
GND
PAD23 PAD
5
6
SSC_DIS
OEB
8INTR
19
12
3
SDA
SCL
I2C_LSB
+3.3 V
0.1 uF Power Supply
Decoupling Capacitors
(1 per VDD or VDDOx pin)
Rse
RshRsh
Rse
Note: See section 3.2 for
information on selecting
Rse and Rsh.
I2C Bus
I2C Address = 111 0000 (0x70)
or 111 0001 (0x71)
+3.3 V
1k1k1k
Si5356
Laser Printer
x
x
22
18
14
10
9
CLK0
CLK2
CLK4
CLK6
CLK7
21
CLK1
17
CLK3
13
CLK5
16 15 1120247
VDDOA
VDDOB
VDDOC
VDDOD
VDD
VDD
1
2
4
25 MHz
XTAL
XA
XB
CLKIN
23
GND
GND
PAD23 PAD
5
6
SSC_DIS
OEB
8INTR
19
12
3
SDA
SCL
I2C_LSB
Processor
125 MHz
DDR
Memory
Touchscreen
Controller
USB
Controller
Print Head
Paper Tray
LCD Screen
Key Pad
48 MHz
66/100 MHz
Ethernet
PHY
35.788 MHz
x
x
+3.3 V
0.1 uF Power Supply
Decoupling Capacitors
(1 per VDD or VDDOx pin)
Rse
RshRsh
Rse
Note: See section 3.2 for
information on selecting
Rse and Rsh.
Si5356A
Rev. 1.3 9
3. Functional Description
3.1. Overview
The Si5356 is a highly flexible, I2C programmable clock
generator capable of synthesizing four independent
frequencies up to 200 MHz. The device has four banks
of outputs with each bank supporting two CMOS
outputs at the same frequency. The Si5356 supports
free-running mode of operation using an external
crystal, or it can lock to an external clock for generating
synchronous clocks. The output drivers support 1.8, 2.5,
and 3.3 V CMOS formats, and each output bank is
independently configurable. Adjustable output-to-output
phase offsets are also available to compensate for PCB
trace delays or for fine tuning of setup and hold
margins.
Configuration and control of the Si5356 is handled
through the I2C/SMBus interface. The device also
provides the option of storing a user-definable clock
configuration in its non-volatile memory (NVM), which
becomes the default clock configuration power-up. See
section "3.5.1. Ordering a Custom NVM Configuration"
on page 12 for details.
3.1.1. ClockBuilder™ Desktop Software
To simplify device configuration, Silicon Labs has
released the ClockBuilder Desktop. The software
serves two purposes: to configure the Si5356 with
optimal configuration based on the desired frequencies,
and to control the EVB, when connected to a host PC.
The optimal configuration can be saved from the
software in text files that can be used in any system,
which configures the device over I2C. ClockBuilder
Desktop can be downloaded from www.silabs.com/
ClockBuilder and runs on Windows XP, Windows Vista,
and Windows 7. Additionally, an NVM file can be
generated using the NVMSave for Factory
Programming... menu option. An NVM file can be used
by factory to prepare custom pre-programmed devices.
Si5356A
10 Rev. 1.3
3.2. Input Configuration
The Si5356 input can be driven from either an external
crystal or a reference clock. If the crystal input option is
used, the Si5356 operates as a free-running clock
generator. In this mode of operation the device requires
a low cost 25 or 27 MHz fundamental mode crystal
connected across XA and XB as shown in Figure 1.
Given the Si5356’s frequency flexibility, the same crystal
can be reused to generate any combination of output
frequencies. Custom frequency crystals are not
required. The Si5356 integrates the crystal load
capacitors on-chip to reduce external component count.
The crystal should be placed very close to the device to
minimize stray capacitance. To ensure a stable and
accurate output frequency, the recommended crystal
specifications provided in Table 4 on page 6 must be
followed. See AN360 for additional details regarding
crystal recommendations.
Figure 1. Connecting an XTAL to the Si5356
For synchronous timing applications, the Si5356 can
lock to a 5 to 200 MHz CMOS reference clock. A typical
interface circuit is shown in Figure 2. A series
termination resistor matching the driver’s output
impedance to the impedance of the transmission line is
recommended to reduce reflections.
Figure 2. Interfacing CMOS Reference Clocks
to the Si5356
Control input signals to SSC_DIS and OEB cannot
exceed 1.3 V yet also need to meet the VOH and VOL
specifications outlined in Table 2 on page 4. When
these inputs are driven from CMOS sources, a resistive
attenuator as shown in the Typical Application Circuits
must be used. Suggested standard 1% resistor values
for RSE and RSH, when using a CMOS source, are
given below.
3.3. Breakthrough MultiSynth Technology
Modern timing architectures require a wide range of
frequencies which are often non-integer related.
Traditional clock architectures address this by using a
combination of single PLL ICs, 4-PLL ICs and discrete
XOs, often at the expense of BOM complexity and
power. The Si5356 use patented MultiSynth technology
to dramatically simplify timing architectures by
integrating the frequency synthesis capability of 4
phase-locked loops (PLLs) in a single device, greatly
minimizing size and power requirements versus
traditional solutions. Based on a fractional-N PLL, the
heart of the architecture is a low phase noise, high-
frequency VCO. The VCO supplies a high frequency
output clock to the MultiSynth block on each of the four
independent output paths. Each MultiSynth operates as
a high-speed fractional divider with Silicon Laboratories'
proprietary phase error correction to divide down the
VCO clock to the required output frequency with very
low jitter.
The first stage of the MultiSynth architecture is a
fractional-N divider which switches seamlessly between
the two closest integer divider values to produce the
exact output clock frequency with 0 ppm error. To
eliminate phase error generated by this process,
MultiSynth calculates the relative phase difference
between the clock produced by the fractional-N divider
and the desired output clock and dynamically adjusts
the phase to match the ideal clock waveform. This novel
approach makes it possible to generate any output
clock frequency without sacrificing jitter performance.
Based on this architecture, each clock output can
produce any frequency from 1 to 200 MHz.
XB
XA
XTAL
Si5356
CLKIN
50
Rs
Si5356
CMOS Level RSE ohms RSH ohms
1.8 V 1000 1580
2.5 V 1960 1580
3.3 V 3090 1580
Si5356A
Rev. 1.3 11
Figure 3. Silicon Labs' MultiSynth Technology
3.4. Frequency Configuration
The Si5356 utilizes a single PLL-based architecture,
four independent MultiSynth fractional output dividers,
and a MultiSynth fractional feedback divider such that a
single device provides the clock generation capability of
four independent PLLs. Unlike competitive multi-PLL
solutions, the Si5356 can generate four unique non-
integer related output frequencies with 0 ppm frequency
error, with respect to the reference, for any combination
of output frequencies. In addition, any combination of
output frequencies can be generated from a single
reference frequency without having to change the
crystal or reference clock frequency between
configurations.
Frequency configurations are fully programmable by
writing to device registers using the I2C interface. Any
combination of output frequencies ranging from 1 to
200 MHz can be configured on each of the device
outputs.
3.5. Configuring the Si5356
The Si5356 is a highly-flexible clock generator that is
entirely configurable through its I2C interface. The
device’s default configuration is stored in non-volatile
memory (NVM) as shown in Figure 4. The NVM is a
one-time programmable memory (OTP), which can
store a custom user configuration at power-up. This is a
useful feature for applications that need a clock present
at power-up (e.g., for providing a clock to a processor).
Figure 4. Si5356 Memory Configuration
During a power cycle or a power-on reset (POR), the
contents of the NVM are copied into random access
memory (RAM), which sets the device configuration that
will be used during operation. Any changes to the
device configuration after power-up are made by
reading and writing to registers in the RAM space
through the I2C interface. ClockBuilder Desktop (see
"3.1.1. ClockBuilder™ Desktop Software" on page 9)
can be used to easily configure register map files that
can be written into RAM (see “3.5.2. Creating a New
Configuration for RAM” for details). Alternatively, the
register map file can be created manually with the help
of the equations in AN565.
Two versions of the Si5356 are available. First, non-
customized Si5356 devices are available in which the
RAM can be configured in-circuit via I2C. These blank
Si5356 devices can also be field programmed using the
Si5338/56-PROG-EVB (see “3.5.4. Writing a Custom
Configuration to NVM”). Second, custom factory-
programmed Si5356 devices are available that include
a user-specified startup frequency configuration
(example part number Si5356A-Axxxxx-GM).
Fractional-N
Divider Phase
Adjust
Phase Error
Calculator
Divider Select
(DIV1, DIV2)
fVCO fOUT
MultiSynth
Power-Up/POR
I2C
RAM
NVM
(OTP)
Default
Config
Si5356A
12 Rev. 1.3
3.5.1. Ordering a Custom NVM Configuration
The Si5356 is orderable with a factory-programmed
custom NVM configuration. This is the simplest way of
using the Si5356 since it generates the desired output
frequencies at power-up or after a power-on reset
(POR). This default configuration can be reconfigured in
RAM through the I2C interface after power-up (see
“3.5.2. Creating a New Configuration for RAM”).
The first step in ordering a custom device is generating
an NVM file which defines the input and output clock
frequencies and signal formats. This is easily done
using the NVMSave for Factory Programming... menu
option in ClockBuilder Desktop. (See "3.1.1.
ClockBuilder™ Desktop Software" on page 9.) This
Windows based software allows the user to generate an
NVM file, which is used by the factory to manufacture
custom parts. Each custom part is marked with a unique
part number identifying the specific configuration (e.g.,
Si5356A-A00100-GM).
Consult your local sales representative for more details
on ordering a custom Si5356.
3.5.2. Creating a New Configuration for RAM
Any Si5356 device can be configured by writing to
registers in RAM through the I2C interface. A non-
factory programmed device must be configured in this
manner.
When creating a custom RAM configuration, use the
following procedure:
1. Create a device configuration (register map) using
ClockBuilder Desktop (v3.0 or later; see "3.1.1.
ClockBuilder™ Desktop Software" on page 9) or
manually using the equations in “AN565: Configuring
the Si5356A”.
a. Configure the frequency plan.
b. Configure the output driver format and supply
voltage.
c. Configure initial phase offset (if desired).
d. Configure spread spectrum (if desired).
2. Save the configuration using the Options > Save
Register Map File or Options > Save C code Header
File, or create the register contents by the
conversions listed in AN565.
At this point, the new configuration can be written to the
device RAM according to the instructions in “3.5.3.
Writing a Custom Configuration to RAM”.
3.5.3. Writing a Custom Configuration to RAM
Writing a new configuration (register map) to the RAM
consists of pausing the LOL state-machine, writing new
values to the IC accounting for the write-allowed mask
given in AN565, validating the input clock or crystal,
locking the PLL to the input with the new configuration,
restarting the LOL state-machine, and calibrating the
VCO for robust operation across temperature. The flow
chart in Figure 5 on page 13 enumerates the details:
Note: The write-allowed mask specifies which bits must be
read and modified before writing the entire register
byte (a.k.a. read-modify-write). “AN428: Jump Start: In-
System, Flash-Based Programming for Silicon Labs’
Timing Products” illustrates the procedure defined in
Section 3.5.2 with ANSI C code.
Si5356A
Rev. 1.3 13
Figure 5. I2C Programming Procedure
3.5.4. Writing a Custom Configuration to NVM
An alternative to ordering an Si5356 with a custom NVM
configuration is to use the field programming kit
(Si5338/56-PROG-EVB) to write directly to the NVM of
a "blank" Si5356. Since NVM is an OTP memory, it can
only be written once. The default configuration can be
reconfigured by writing to RAM through the I2C interface
(see “3.5.2. Creating a New Configuration for RAM”).
3.6. Output Phase Adjustment
The Si5356 has a digitally-controlled phase adjustment
feature that allows the user to adjust the phase of each
output clock in relation to the other output clocks. The
phase of each output clock can be adjusted with an
error of <20 ps over a range of ±45 ns. This feature is
available on any clock output that does not have Spread
Spectrum enabled.
3.7. CMOS Output Drivers
The Si5356 has 4 banks of outputs with each bank
comprised of 2 clocks for a total of 8 CMOS outputs per
device. By default, each bank of CMOS output clocks
are in-phase. Alternatively, each output clock can be
inverted. This feature enables each output pair to
operate as a differential CMOS clock. Each of the
output banks can operate from a different VDDO supply
(1.8 V, 2.5 V, 3.3 V), simplifying usage in mixed supply
applications.
The CMOS output driver has a controlled impedance of
close to 50  which includes an internal 22 series
resistor. An external series resistor is not needed when
driving 50 traces. If higher impedance traces are used
then a series resistor may be added. A typical
configuration is shown in Figure 6.
3.8. Jitter Performance
The Si5356 provides consistently low jitter for any
combination of output frequencies. The device
leverages a low phase noise single PLL architecture
and Silicon Laboratories’ patented MultiSynth fractional
output divider technology to deliver excellent jitter
performance guaranteed across process, temperature
and voltage. The Si5356 provides superior performance
to traditional multi-PLL solutions which may suffer from
degraded jitter performance depending on frequency
plan and the number of active PLLs.
Register
Map
Use ClockBuilder
Desktop v3.0 or later
Set reg241 = 0x65
Write new configuration to device
accounting for the write-allowed mask
(See AN565: Configuring the Si5356A)
Disable Outputs
Set OEB_ALL = 1; reg230[4]
If using down-spread:
Set MS_RESET = 1; reg 226[2] = 1
Wait 1 ms
Set MS_RESET = 0; reg 226[2] = 0
Apply Soft Reset
Set SOFT_RESET = 1; reg246[1]
Enable Outputs
Set OEB_ALL = 0; reg230[4]
Si5356A
14 Rev. 1.3
3.9. Status Indicators
An open-drain interrupt pin (INTR) is available to
indicate a loss of signal (LOS) condition, a PLL loss of
lock (LOL) condition, or that the PLL is in the process of
acquiring lock (SYS_CAL). As shown in Figure 7, a
status register at address 218 is available to help
identify the exact event that caused the interrupt pin to
become active. A LOS condition occurs when there is
no clock input to the Si5356. The loss of lock algorithm
works by continuously monitoring the frequency
difference between the two inputs of the phase
frequency detector. When this frequency difference is
greater than about 1000 ppm, a loss of lock condition is
declared. Note that the VCO will track the input clock
frequency for up to approximately 25000 ppm, which
will keep the inputs to the phase frequency detector at
the same frequency until the PLL comes out of lock.
When a clock input is removed, the interrupt pin will
assert, and the clock outputs may drift up to 5%. When
the input clock is reapplied with an appropriate
frequency, the PLL will again lock.
Figure 6. CMOS Output Driver Configuration
Si5356A
Rev. 1.3 15
3.10. I2C Interface
The Si5356 control interface is a 2-wire bus for
bidirectional communication. The bus consists of a
bidirectional serial data line (SDA) and a serial clock
input (SCL). The device operates as a slave device on
the 2-wire bus and is compatible with I2C specifications.
Both lines must be connected to the positive supply via
an external pull-up. Standard-Mode (100 kbps) and
Fast-Mode (400 kbps) operation and 7-bit addressing
are supported as specified in the I2C-Bus Specification
standard. To accommodate multiple Si5356 devices on
the same I2C bus, the Si5356 has pin 3 as I2C_LSB.
The complete 7-bit I2C bus address for the device is
70h or 71h depending upon the state of the I2C_LSB
pin. In binary, this is written as 111 000[I2C_LSB]. See
Figure 8 for the command format for both read and write
access.
Data is always sent MSB first. Table 5 includes the AC
and DC electrical parameters for the SCL and SDA I/
Os, respectively. The timing specifications and timing
diagram for the I2C bus can be found in the I2C-Bus
Specification standard. SDA timeout support is
supported for compatibility with SMBus interfaces.
The I2C interface is 3.3 V tolerant.
The I2C bus can be operated at a bus voltage of 1.71 to
3.63 V and should have a pullup resistor as
recommended by the I2C-Bus Specification. If the I2C
bus voltage is less than 2.25 V, register 27[7] must be
set to 1.
Figure 7. Status Register
218
01234567
LOS
XTAL
LOS
Clk
SYS
Cal
LOL
System Calibration
(Lock Acquisition)
Loss of Signal
XTAL Input
Loss of Signal
Clock Input
Loss of Lock
Si5356A
16 Rev. 1.3
Figure 8. I2C/SMBus-Compatible Command Format
3.11. Spread Spectrum
To help reduce electromagnetic interference (EMI), the
Si5356A supports spread spectrum modulation. The
output clock frequencies can be modulated to spread
energy across a broader range of frequencies, lowering
system EMI. The Si5356A implements spread spectrum
using its patented MultiSynth technology to achieve
previously unattainable precision in both modulation
rate and spreading magnitude as shown in Figure 9.
Through I2C control, the Spread Spectrum can be
applied to any output clock, any clock frequency, and
any spread amount from ±0.1% to ±2.5% center spread
and –0.1% to –5% down spread .
The spreading rate is limited to 30 to 63 kHz.
The Spread Spectrum is generated digitally in the output
MultiSynths which means that the Spread Spectrum
parameters are virtually independent of process,
voltage, and temperature variations. Since the Spread
Spectrum is created in the output MultiSynths, through
I2C each output channel can have independent Spread
Spectrum parameters. Without the use of I2C (NVM
download only) the only supported Spread Spectrum
parameters are for PCI Express compliance composing
100 MHz clock, 31.5 kHz spreading frequency with the
choice of the spreading.
Rev A devices provide native support for both down and
center spread. Center spread is supported in rev B
devices by up-shifting the nominal frequency and using
down-spread register parameters. Consult AN565 for
details.
Note: If you currently use center spread on a revision A and
would like to migrate to a revision B device, you must
generate a new register map using either ClockBuilder
Desktop or the equations in AN565. Center spread
configurations for
Revisions A and B are not compatible.
From master to slave From slave to master
1 – Read
0 – Write
A – Acknowledge (SDA LOW)
N – Not Acknowledge (SDA HIGH).
Required after the last data byte to signal the end of the read comand to the slave.
S – START condition
P – STOP condition
Repeated Start Read
Write
A
Reg Addr [7:0]A
S Slv Addr [6:0] 0 SSlv Addr [6:0] 1 A A
Data [7:0] NP
Data [7:0]
A
A
Reg Addr [7:0]
AS Slv Addr [6:0] 0 A
Data [7:0] Data [7:0] P
Read Data
A
Data [7:0]A
S Slv Addr [6:0] 1 NP
Data [7:0]
Write Data
A
Reg Addr [7:0]A
S Slv Addr [6:0] 0 P
Two Command Read
Optional
Optional
Optional
Si5356A
Rev. 1.3 17
Figure 9. Configurable Spread Spectrum
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-10% -8% -6% -4% -2% 0% 2% 4% 6% 8% 10%
Relative Frequency
Relative Power (dB
)
±1.0%
±2.5%
±5.0%
No sp read
Si5356A
18 Rev. 1.3
3.12. Power Supply Considera tions
The Si5356 has two core supply voltage pins (VDD) and
four clock output bank supply voltage pins (VDDOA
VDDOD), enabling the device to be used in mixed supply
applications. The Si5356 does not require ferrite beads
for power supply filtering. The device has extensive on-
chip power supply regulation to minimize the impact of
power supply noise on output jitter. Figure 10 is a curve
of additive phase jitter with power supply noise. Note
that even when a significant amount of noise is applied
to the device power supply, additive phase jitter is still
very small.
Figure 10. Peak-to-Peak Additive Phase Jitter from 100 mV Sine Wave on Supply
Si5356A
Rev. 1.3 19
4. Si5356 Registers
For many applications, the Si5356's register values are easily configured using ClockBuilder Desktop (see "3.1.1.
ClockBuilder™ Desktop Software" on page 9). However, for customers interested in using the Si5356 in operating
modes beyond the capabilities available with ClockBuilder, refer to “AN565: Configuring the Si5356A” for a detailed
description of the Si5356 registers and their usage. Also refer to “AN428: Jump Start: In-System, Flash-Based
Programming for Silicon Labs’ Timing Products” for a working application example of register programming using
the Silicon Labs' C8051F301 MCU.
Si5356A
20 Rev. 1.3
5. Pin Descriptions
Note: Center pad must be tied to GND for normal operation.
Table 8. Si5356 Pin Descriptions
Pin # Pin Name I/O Description
1XA I
External Crystal.
If a 25 or 27 MHz crystal is used as the device frequency reference, connect it across
XA and XB. If no input clock is used, this pin should be tied to GND.
2XB I
External Crystal.
If a 25 or 27 MHz crystal is used as the device frequency reference, connect it across
XA and XB. If no input clock is used, this pin should be tied to GND.
3 I2C_LSB I I2C LSB Address Bit (3.3 V Tolerant).
This pin is the least significant bit of the Si5356 I2C address allowing up to two Si5356
devices to occupy the same I2C bus.
4CLKIN I
Single-Ended Input Clock.
If a single-ended clock is used as the device frequency reference, connect it to this pin.
This pin functions as a high-impedance input for CMOS clock signals. The input should
be dc coupled. If a crystal is used as the device frequency reference, this pin should be
tied to GND.
XA
CLK5
CLK4
VDDOC
VDDOB
CLK3
CLK2
VDD VDD
SCL
CLK6
CLK7
INTR
SDA
VDDOA
CLK1
CLK0
GND
VDDOD
GND
GND
XB
I2C_LSB
CLKIN
SSC_DIS
OEB
Top View
1
6
5
4
3
2
712111098
18
13
14
15
16
17
24 1920212223
Si5356A
Rev. 1.3 21
5 SSC_DIS I Spread Spectrum Disable.
This pin allows disabling of the spread spectrum feature on the output clocks. Note that
the maximum voltage level on this pin must not exceed 1.3 V. To disable spread spec-
trum connect this pin to a voltage of 0.85 to 1.3 V. Connect to GND to enable spread
spectrum. A resistor voltage divider is recommended when controlled by a signal
greater than 1.3 V. See the Typical Application Circuit for details.
6OEB I
Output Enable (Active Low).
This pin allows disabling the output clocks. Note that the maximum voltage level on this
pin must not exceed 1.3 V. To disable all outputs connect this pin to a voltage of 0.85 to
1.3 V. Connect to GND to enable all outputs. A resistor voltage divider is recommended
when controlled by a signal greater than 1.3 V. See the Typical Application Circuit for
details.
7VDDVDD
Core Supply Voltage.
The device operates from a 1.8, 2.5, or 3.3 V supply. A 0.1 μF bypass capacitor should
be located very close to this pin.
8INTRO
Interrupt.
A typical pullup resistor of 1–4 k should be used on this pin.
This pin functions as an maskable interrupt output.
0 = No interrupt
1 = Interrupt present
This pin is open drain and requires an external >1k pullup resistor.
9CLK7O
Output Clock 7.
CMOS output clock. If unused, this pin must be left floating.
10 CLK6 O Output Clock 6.
CMOS output clock. If unused, this pin must be left floating.
11 VDDOD VDD Clock Output Bank D Supply Voltage.
Power supply for clock outputs 6 and 7. May be operated from a 1.8, 2.5, or 3.3 V sup-
ply. A 0.1 μF bypass capacitor should be located very close to this pin. If CLK6/7 are not
used, this pin must be tied to pin 7 and/or pin 24 or a voltage rail > 1.5 V.
12 SCL I I2C Serial Clock Input (3.3 V Tolerant).
13 CLK5 O Output Clock 5.
CMOS output clock. If unused, this pin must be left floating.
14 CLK4 O Output Clock 4.
CMOS output clock. If unused, this pin must be left floating.
15 VDDOC VDD Clock Output Bank C Supply Voltage.
Power supply for clock outputs 4 and 5. May be operated from a 1.8, 2.5 or 3.3 V sup-
ply. A 0.1 μF bypass capacitor should be located very close to this pin. If CLK4/5 are not
used, this pin must be tied to pin 7 and/or pin 24 or a voltage rail > 1.5 V.
16 VDDOB VDD Clock Output Bank B Supply Voltage.
Power supply for clock outputs 2 and 3. May be operated from a 1.8, 2.5, or 3.3 V sup-
ply. A 0.1 μF bypass capacitor should be located very close to this pin. If CLK2/3 are not
used, this pin must be tied to pin 7 and/or pin 24 or a voltage rail > 1.5 V.
17 CLK3 O Output Clock 3.
CMOS output clock. If unused, this pin must be left floating.
Table 8. Si5356 Pin Descriptions (Continued)
Si5356A
22 Rev. 1.3
18 CLK2 O Output Clock 2.
CMOS output clock. If unused, this pin must be left floating.
19 SDA I/O I2C Serial Data (3.3 V Tolerant).
20 VDDOA VDD Clock Output Bank A Supply Voltage.
Power supply for clock outputs 0 and 1. May be operated from a 1.8, 2.5, or 3.3 V sup-
ply. A 0.1 μF bypass capacitor should be located very close to this pin. If CLK0/1 are not
used, this pin must be tied to pin 7 and/or pin 24 or a voltage rail > 1.5 V.
21 CLK1 O Output Clock 1.
CMOS output clock. If unused, this pin must be left floating.
22 CLK0 O Output Clock 0.
CMOS output clock. If unused, this pin must be left floating.
23 GND GND Ground.
Must be connected to system ground. Minimize the ground path impedance for optimal
performance of the device.
24 VDD VDD Core Supply Voltage.
The device operates from a 1.8, 2.5, or 3.3 V supply. A 0.1 μF bypass capacitor should
be located very close to this pin.
GND
PAD
GND GND Ground Pad.
This is the large pad in the center of the package. The device will not function unless the
ground pad is properly connected to a ground plane on the PCB. See "8. Recom-
mended PCB Land Pattern" on page 25 for the PCB pad sizes and ground via require-
ments.
Table 8. Si5356 Pin Descriptions (Continued)
Si5356A
Rev. 1.3 23
6. Ordering Guide
6.1. Evaluation Board
Si5356A Bxxxxx GMR
I2C Programmable
Any-Frequency 1–200 MHz
Quad Frequency
8-Output Clock Generator B = product revision B
xxxxx = 5-digit custom code
assigned to each unique
device configuration. Leave
xxxxx blank for standard
factory default configuration
(Si5356A-B-GMR)
GMR = tape & reel
GM = trays
Contact your Silicon Labs sales
representative for details regarding
shipment media.
Si5356 EVB Si5356 Evaluation Board
Si5356A
24 Rev. 1.3
7. Package Outline: 24-Lead QFN
Figure 11. 24-Lead Quad Flat No-Lead (QFN)
Table 9. Package Dimensions
Dimension Min Nom Max
A 0.80 0.85 0.90
A1 0.00 0.02 0.05
b 0.18 0.25 0.30
D 4.00 BSC.
D2 2.35 2.50 2.65
e 0.50 BSC.
E 4.00 BSC.
E2 2.35 2.50 2.65
L 0.30 0.40 0.50
aaa 0.10
bbb 0.10
ccc 0.08
ddd 0.10
eee 0.05
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to the JEDEC Outline MO-220, variation VGGD-8.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.
5. J-STD-020 MSL rating: MSL3.
6. Terminal base alloy: Cu.
7. Terminal plating/grid array material: Au/NiPd.
8. For more packaging information, go to www.silabs.com/support/quality/pages/RoHSInformation.aspx.
Si5356A
Rev. 1.3 25
8. Recommended PCB Land Pattern
Table 10. PCB Land Pattern
Dimension Min Nom Max
P1 2.50 2.55 2.60
P2 2.50 2.55 2.60
X1 0.20 0.25 0.30
Y1 0.75 0.80 0.85
C1 3.90
C2 3.90
E0.50
Notes:
General
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994 specification.
3. This Land Pattern Design is based on the IPC-7351 guidelines.
4. Connect the center ground pad to a ground plane with no less than five vias. These 5 vias should have a length of no
more than 20 mils to the ground plane. Via drill size should be no smaller than 10 mils. A longer distance to the ground
plane is allowed if more vias are used to keep the inductance from increasing.
Solder Mask Design
5. All metal pads are to be non-solder mask defined (NSMD). Clearance between the solder mask and the metal pad is
to be 60 µm minimum, all the way around the pad.
Stencil Design
6. A stainless steel, laser-cut and electro-polished stencil with trapezoidal walls should be used to assure good solder
paste release.
7. The stencil thickness should be 0.125 mm (5 mils).
8. The ratio of stencil aperture to land pad size should be 1:1 for all perimeter pins.
9. A 2x2 array of 1.0 mm square openings on 1.25 mm pitch should be used for the center ground pad.
Card Assembly
10. A No-Clean, Type-3 solder paste is recommended.
11. The recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.
Si5356A
26 Rev. 1.3
9. Top Marking
9.1. Si5356A Top Marking
9.2. Top Marking Explanation
Mark Method: Laser
Line 1 Marking: Device Part Number Si5356
Line 2 Marking: A = Frequency and configuration code.
I2C programmable, any-frequency
1–200 MHz, quad frequency, 8-output
clock generator.
xxxxx = NVM code for custom factory-
programmed devices (characters are not
included for blank devices).
See Ordering Guide section in data sheet
for more information.
Axxxxx
Line 3 Marking: R = Product revision.
TTTTT = Manufacturing trace code.
RTTTTT
Line 4 Marking: Pin 1 indicator. Circle with 0.5 mm diameter;
left-justified
YY = Year.
WW = Work week.
Characters correspond to the year and
work week of package assembly.
YYWW
YYWW
RTTTTT
Axxxxx
Si5356
Si5356A
Rev. 1.3 27
10. Device Errata
Please visit www.silabs.com to access the device errata document.
Si5356A
28 Rev. 1.3
DOCUMENT CHANGE LIST
Revision 0.1 to Revision 0.2
Improved specification details on input signals.
Added phase and cycle-cycle jitter specifications.
Added thermal resistance junction to case.
Improved application circuits.
Added GND via requirement details.
Added differential CMOS capability.
Revision 0.2 to Revision 0.3
Added Section “3.1. Overview”
Updated Section “3.2. Input Configuration”
Updated Section “3.4. Frequency Configuration”
Added Section “3.5. Configuring the Si5356”
Added Section “4. Si5356 Registers”
Added Section “9. Top Marking
Updated “Figure 10. Peak-to-Peak Additive Phase
Jitter from 100 mV Sine Wave on Supply”
Revision 0.3 to Revision 1.0
Renamed part number on page header from Si5356
to Si5356A.
Updated Table 2. DC Characteristics.
Added IDDOx specification.
Corrected Pn Input Resistance specification.
Updated Table 3, “AC Characteristics,” on page 5.
Added 10–90% input clock rise/fall time.
Added LOS assert/deassert time.
Added note on jitter test.
Updated 20–80% rise/fall time with CL = 15 pF for
output clocks to the maximum value of 2.0 ns.
Changed Frequency Synthesis Resolution spec to the
correct value of 1ppb max.
Updated recommended crystal load parameters in
Table 4 on page 6.
Updated Table 6 on page 7.
Added Soldering profile specification
Corrected Input Voltage Range (VI2) to 1.3 V (max).
Added packaging/RoHS information.
Removed section “3.5.4. Modifying a MultiSynth
Output Divider Ratio/Frequency Configuration.”
Removed output-to-output skew spec from text in
section "3.7. CMOS Output Drivers" to prevent
duplicating spec in “Table 3. AC Characteristics.”
Removed jitter spec from text in section "3.8. Jitter
Performance" to prevent duplicating spec in
“Table 3. AC Characteristics.”
Added Evaluation Board information to the Ordering
Guide.
Revision 1.0 to Revision 1.1
Updated Figure 5 on page 13 to provide workaround
for spread spectrum errata.
Added " Document Change List" on page 28.
Revision 1.1 to Revision 1.2
Removed down spread spectrum errata that has
been corrected in Revision B.
Updated ordering information to refer to Revision B
silicon.
Updated top marking explanation in table.
Added further explanation to describe revision-
specific behavior of center spread spectrum in
Section 3.11
Revision 1.2 to Revision 1.3
Added link to errata document.
http://www.silabs.com
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Austin, TX 78701
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