BY251P thru BY255P
Document Number 88838
28-Apr-05
Vishay Semiconductors
www.vishay.com
1
DO-201AD
General Purpose Plastic Rectifier
Major Ratings and Characteristics
Features
• Low forward voltage drop
• Low leakage current, IR less than 0.1 µA
IF(AV) 3.0 A
VRRM 200 V to 1300 V
IFSM 150 A
IR5.0 µA
VF1.1 V
Tj max. 150 °C
• High forward surge capability
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-201AD, molded plastic body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbol BY251P BY252P BY253P BY254P BY255P Unit
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1300 V
Maximum RMS voltage VRMS 140 280 420 560 910 V
Maximum DC blocking voltage VDC 200 400 600 800 1300 V
Maximum average forward rectified current 10 mm lead length IF(AV) 3.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM 150 A
Maximum full load reverse current, full cycle average 10 mm
lead length
IR(AV) 100 µA
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com
2
Document Number 88838
28-Apr-05
BY251P thru BY255P
Vishay Semiconductors
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol BY251P BY252P BY253P BY254P BY255P Unit
Maximum instantaneous
forward voltage
at 3.0 A VF 1.1 V
Maximum reverse current at
rated DC blocking voltage
TA = 25 °C IR 5.0 µA
Typical reverse recovery time IF = 0.5 A, IR = 1.0 V,
Irr = 0.25 A
trr 3.0 µs
Typical junction capacitance at 4.0 V, 1 MHz CJ 40 pF
Parameter Symbol BY251P BY252P BY253P BY254P BY255P Unit
Typical thermal resistance(1) RθJA
RθJL
20
10
°C/W
Figure 1. Forward Current Derating Curve
025 50 75 100 125 150 175
0
1.0
2.0
3.0
4.0
60 Hz
Resistive or
Inductive Load
Average Forward Rectified Current (A)
Ambient Temperature, °C
10mm lead length
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
110 100
10
100
200
Peak Forward Surge Current (A)
Number of Cycles at 60Hz
8.3ms Single Half Sine-Wave
T
A
=55 °C
BY251P thru BY255P
Document Number 88838
28-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Maximum Non-repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
020 40 60 80 100
0.01
0.1
1
10
Instantaneous Reverse Leakage Current ( A)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 125 °C
T
J
=75°C
T
J
=25°C
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
10
100
1
0.1
T
J
=25°C
Pulse width = 300 µs
1% Duty Cycle
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
Figure 5. Typical Junction Capacitance
110 100
10
100
T
J
=25°C
f = 1.0 MHz
Vsig = 50mVp-p
Junction Capacitance (pF)
Reverse Voltage (V)
0.210 (5.3)
0.190 (4.8)
Dia.
0.052 (1.32)
0.048 (1.22)
Dia.
1.0 (25.4)
Min.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
DO-201AD
