2N5679 2N5680 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 The complementary NPN types are the 2N5681 and 2N5682 respectively 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25c unless otherwise stated 2N5679 2N5680 VCBO Collector - Base Voltage -100V -120V VCEO Collector - Emitter Voltage (IB = 0) -100V -120V VEBO Emitter - Base Voltage (IC = 0) -4V IC Continuous Collector Current -1A IB Base Current Ptot Total Dissipation at -0.5A Tcase 25C 10W Tamb 25C 1W Tstg Operating and Storage Temperature Range Tj Junction temperature -65 to +200C 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3076 Issue 1 2N5679 2N5680 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 17.5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit A IE = 0 ICBO ICEV Collector Cut Off Current Collector Cut Off Current for 2N5679 VCB = -100V -1 for 2N5680 VCB = -120V -1 for 2N5679 VCE = -100V -1 for 2N5680 VCE = -120V -1 Tcase = 150C for 2N5679 VCE = -100V -1 for 2n5680 VCE = -120V -1 for 2N5679 VCE = -70V -10 for 2N5680 VCE = -80V -10 IC = 0 VEB = -4V -1 IB = 0 IC = -10mA VBE = 1.5 A mA IB = 0 ICEO IEBO Collector Cut Off Current Emitter Cut Off Current VCEO(sus)* Collector Emitter Sustaining Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* DC Current Gain fT Transistion Frequency CCBO Collector Base Capacitance hfe Small Signal Current Gain for 2N5679 -100 for 2N5680 -120 IC = -250mA IB = -25mA -0.6 IC = -500mA IB = -50mA -1 IC = -1A IB = -200mA -2 IC = -250mA VCE = -2V -1 IC = -250mA VCE = -2V 40 IC = -1A VCE = -2V 5 IC = -100mA VCE = -10V f = 10MHz IE = 0 IC = -0.2A VCE = -1.5V f = 1KHz MHz 50 f = 1MHz V 150 30 VCB = -20V A pF 40 * Pulse test tp = 300s , < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3076 Issue 1