DESCRIPTION
The 2N5679 and 2N5680 are silicon epitaxial
planar PNP transistors in jedec TO-39 metal
case intended for use as drivers for high
power transistors in general purpose,
amplifier and switching circuit
The complementary NPN types are the
2N5681 and 2N5682 respectively
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°c unless otherwise stated 2N56802N5679
2N5679
2N5680
Document Number 3076
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
PNP SILICON
TRANSISTORS
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICContinuous Collector Current
IBBase Current
Ptot Total Dissipation at Tcase ≤25°C
Tamb ≤25°C
Tstg Operating and Storage Temperature Range
TjJunction temperature
-100V -120V
-100V -120V
-4V
-1A
-0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO-39 (TO-205AD)
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
Parameter Test Conditions Min. Typ. Max. Unit
µA
µA
mA
µA
V
MHz
pF
Rthj-case
Rthj-amb
17.5
175
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max °C/W
°C/W
-1
-1
-1
-1
-1
-1
-10
-10
-1
-100
-120 -0.6
-1
-2
-1
40 150
5
30
50
40
2N5679
2N5680
Document Number 3076
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ICBO
ICEV
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE*
hFE*
fT
CCBO
hfe
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
IE= 0
for 2N5679 VCB = -100V
for 2N5680 VCB = -120V
VBE = 1.5
for 2N5679 VCE = -100V
for 2N5680 VCE = -120V
Tcase = 150°C
for 2N5679 VCE = -100V
for 2n5680 VCE = -120V
IB= 0
for 2N5679 VCE = -70V
for 2N5680 VCE = -80V
IC= 0 VEB = -4V
IB= 0 IC= -10mA
for 2N5679
for 2N5680
IC= -250mA IB= -25mA
IC= -500mA IB= -50mA
IC= -1A IB= -200mA
IC= -250mA VCE = -2V
IC= -250mA VCE = -2V
IC= -1A VCE = -2V
IC= -100mA VCE = -10V
f = 10MHz
IE= 0 VCB = -20V
f = 1MHz
IC= -0.2A VCE = -1.5V
f = 1KHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test tp= 300µs , δ< 2%
THERMAL DATA
