SILICON CONTROLLED r I 1 I RECTIFIERS These devices are designed for 12.5 Ampere RMS, 100 through 600 Volt power wpply and computer control applications to 10OC maximum Junction Temperature. @ Low Forward "On" Voltage - VTM = 1.8 Volts (Max) @ TJ = 25C ,,::~, ,., ~,$?. .4: .:/[, ,:~ `.* @ Al I Diffused Junctions for Greater Parameter Uniformity u rAB .~~y+ ~'K SEAnNG 2N4103 ~ 1:$ """ ,,y\ f l*,:i. c D PLANE 600 I ,,,~r,,. Peak Forward Gate Voltage ,, 5 $% ..\s*>.3. ` :::**! ,fi,: * t,t,, Paak Revarsa Gate Voltage Forward Current RMS (Tq,~ 80&~> (All Conduction Peak Forward VGF volts 5.0 volts IT(RMS) 12.5 Amps ITSM 200 Amps 12~ 166 A2s An~~~,$a', ~+.++, ., Surge,:~<&t"' (1/2 cycle, Si~,~v~@O T. I = -40 10 VG R Hz, t~ (VDRM Voltage , I = 12 Vdc) Application ,.~, .,! *...fi$,$, >.:, Rate . ... ,,. .. t.{,), . I I $.$,. *ed I I I 1 11111111111 -"111111111' OuI 0 1 , 1 1 2.0 4.0 1 1 1 6,0 1 8.0 I I I Idcl 111111 1 1 1 10 I 12 1 .:i$ dvldt 20 I 1 MOTOROLA 1 40 mA 3.0 2.0 -- 20 mA 0.5 #s -- 50 Us -- 30 VIPS # 12 I I 1 1 1 1 I ! 1 1 I 1 1 I I f I 1 I 14 : `"~a=co;:~k~::E~ oo~ IT(AV], AVERAGE FORWARDCURRENT(AMP) -- (Mj 1 volts 80 1.0 - "i@%*.@ " .. tq = rated voltage) 1.8 volts $5 "":$ "t+' ) \)~\ ~",, ~~.w~.' :f*%$,: "'a :,:+ .,$ ` ~$.,, .*$ `+>k`<..,... Holding Current Turn-On .$$ .',$ \,;**. \,.i,, -- ~~t\e: `$ 0.3 ~'` it<\ (TJ = +lOOC) (Anode Voltege "`. k~>, ~J..<\i ,.>i :'6 \.:\i+ ~ **$> ~:!.,.,. ?~:,~~~ ,.i~,.\}:+,..c, 4.0 ,* i ~??~~)j:g `3 ,.:> ~,,.j,.' ,p,>,. ,.,, ,..{, .:J>\>\:bs ~i.kli~ ,~~< .i::1*!!~3*). !,;,, ..... Y,:,+* _ . . ,~:'~ ~*;! --::it,~>~..i-:,, `!....' -- VTM = 25 A peak) *Gate Trigger Current mA ~W.k~If}l 2.0 2.5 3.0 ,,, ,, .,.,x, ~s:,,">:$*' i$~%~,,~ ~ `A -- 2N4103 Voltage -- -- 2N3670 "On" -- IRRM 2N3669 *Forward Unit volts 2N3668 *Peak :Reversa 810cking Current Iflated Max Typ 2N3669 2N3670 2N4103 810cking Current (Rated VDRM Min VDRM Voltage Sem;conduc~or 1 1 2.0 1 1 4.0 1 1 1 6.0 8,0 10 1 12 14 IT(AV), AVERAGE FORWARDCURRENT(AMP) Produces ,. Inc. --