© Semiconductor Components Industries, LLC, 2017
May, 2017 − Rev. 4 1Publication Order Number:
NTMFS5C442NLT/D
NTMFS5C442NLT
Power MOSFET
40 V, 2.5 mW, 130 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NTMFS5C442NLTWF − Wettable Flank Option for Enhanced
Optical Inspection
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID130 A
TC = 100°C 95
Power Dissipation
RqJC (Note 1) TC = 25°CPD83 W
TC = 100°C 42
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID28 A
TA = 100°C 20
Power Dissipation
RqJA (Notes 1 & 2) TA = 25°CPD3.7 W
TA = 100°C 1.8
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+175 °C
Source Current (Body Diode) IS81 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 10 A) EAS 265 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 1.8 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 41
1. The e ntire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
40 V 2.5 mW @ 10 V 130 A
3.7 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C442L
XXXXXX = (NTMFS5C442NLT) or
XXXXXX = 442LWF
XXXXXX = (NTMFS5C442NLTWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NTMFS5C442NLT
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ24.8 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 40 V TJ = 25 °C 10 mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.4 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.0 2.5 mW
VGS = 4.5 V ID = 50 A 2.9 3.7
Forward Transconductance gFS VDS = 15 V, ID = 50 A 116 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
3100
pF
Output Capacitance COSS 1100
Reverse Transfer Capacitance CRSS 37
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 23
nC
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 50
Threshold Gate Charge QG(TH)
VGS = 4.5 V, VDS = 32 V; ID = 50 A
5.0
Gate−to−Source Charge QGS 9.8
Gate−to−Drain Charge QGD 6.7
Plateau Voltage VGP 3.1 V
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 32 V,
ID = 50 A, RG = 1.0 W
12
ns
Rise Time tr8.3
T urn−Off Delay Time td(OFF) 28
Fall Time tf9.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A TJ = 25°C 0.85 1.2 V
TJ = 125°C 0.73
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
46
ns
Charge Time ta23
Discharge Time tb23
Reverse Recovery Charge QRR 40 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS5C442NLT
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.01.51.00.50
0
20
40
60
80
100
120
140
4.03.02.52.01.51.00.50
0
20
40
60
80
100
140
160
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
403510 25155
10
100
100,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDSS, LEAKAGE (nA)
2.8 V
3.0 V
3.2 V
10 V to 4.5 V
3.5
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 125°C
TJ = 85°C
160
180
200
120
180
2.0 2.5
220
3.4 V
3.6 V
3.8 V
4.0 V VDS = 3 V
1000
10,000 TJ = 150°C
20 30
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
987654
2.0
3.0
3.5
4.0
5.0
120100 140806040200
1.5
2.0
3.5
4.5
TJ, JUNCTION TEMPERATURE (°C)
15012510075250−25−50
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = 25°C
ID = 50 A TJ = 25°C
VGS = 4.5 V
VGS = 10 V
VGS = 10 V
ID = 50 A
50
3
2.5
4.5
160 180 200
2.5
3.0
4.0
210
1.0
5.0
2.0
175
NTMFS5C442NLT
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
403025520100
0
400
800
1200
2800
3200
48403224840
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.8 1.00.70.60.50.40.3
1
21
41
Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche
VDS (V) TIME IN AVALANCHE (s)
1001010.1
1
10
100
1000
1
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
IDS (A)
IPEAK (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
15
20
25
30
5
VDS = 32 V
TJ = 25°C
ID = 50 A
QT
QGS QGD
VGS = 4.5 V
VDD = 32 V
ID = 50 A
td(off)
td(on)
tf
tr
TJ = 125°C
TJ = 25°C
TJ = −55°C
11
31
TJ(initial) = 100°C
TJ(initial) = 25°C
1E−04 1E−02
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.01 ms
0.1 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
1600
2000
2400
3600
1E−03
100
15 35
46
6
26
16
36
12 16 20 28 36 44
NTMFS5C442NLT
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5
Figure 13. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.01
0.1
1
10
100
RqJA(t) (°C/W)
100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1% NTMFS5C442NLT 650 mm2, 2 oz., Cu Single Layer Pad
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NTMFS5C442NLTT1G 5C442L DFN5
(Pb−Free) 1500 / Tape & Reel
NTMFS5C442NLTWFT1G 442LWF DFN5
(Pb−Free, Wettable Flanks) 1500 / Tape & Reel
NTMFS5C442NLTT3G 5C442L DFN5
(Pb−Free) 5000 / Tape & Reel
NTMFS5C442NLTWFT3G 442LWF DFN5
(Pb−Free, Wettable Flanks) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTMFS5C442NLT
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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