Rev.0 Aug. 01, 2008 page 1 of 4
HL6548FG
Visible High Power Laser Diode ODE2037-00 (M)
Rev.0
Aug. 01, 2008
Description
The HL6548FG is a 0.65 μm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable
as a light source for measurement, and various other types of optical equipment.
Features
• Optical output power: 90mW CW operation
• Single longitudinal mode
• Visible light output : λp = 660 nm Typ
LD
1
3
Internal Circuit
Package Type
• HL6548FG: FG
2
4
(Flange)
PD
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 100 mW
LD reverse voltage VR(LD) 2 V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +60 °C
Storage temperature Tstg –40 to +85 °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith — 55 70 mA —
Operating current IOP — 140 180 mA PO = 90 mW
Operating voltage VOP — 2.4 2.8 V PO = 90 mW
Lasing wavelength λp 654 660 665 nm PO = 90 mW
Beam divergence
parallel to the junction θ// 7 10 13 ° PO = 90 mW
Beam divergence
perpendicular to the junction θ⊥ 15 17 20 ° PO = 90 mW
Monitor current Is 0.3 0.6 1.2 mA PO = 90 mW,
VR(RD) = 5V
HL6548FG
Rev.0 Aug. 01, 2008 page 2 of 4
Typical Characteristic Curves
Slope efficiency, η
S
(mW/mA)
Case temperature, T
C
(°C)
Slope Efficiency vs. Case Temperature
1.2
1.0
0.6
0.8
0.4
001020304050607080
Threshold current, Ith (mA)
Case temperature, T
C
(°C)
Threshold Current vs. Case Temperature
08070605040302010
100
10
0.2
50
Relative intensity
Angle, θ ( ° )
Far Feild Pattern
–40 –100 102030–20–30 40
1.0
0.8
0.6
0.4
0.2
0
P
O
= 90mW
T
C
= 25°C
Perpendicular
Parallel
020015010050
120
Optical output power, P
O
(mW)
0
Forward current, I
F
(mA)
Optical Output Power vs. Forward Current
250 300
80
40
T
C
= 25°C
T
C
= 0°C
T
C
= 60°C
Lasing Wavelength, λp (nm)
Case temperature, T
C
(°C)
Wavelength vs. Case Temperature
0604020
680
665
660
655
650
80
670
100
675
645
640
Monitor current, I
S
(mA)
0
Case temperature, T
C
(°C)
50 60
10 40
3020
1.0
0.8
0.6
0.4
0
Monitor Current vs. Case Temperature
100
60
20
70 80
P
O
= 90 mW
V
R(PD)
= 5 V
P
O
= 90mW
HL6548FG
Rev.0 Aug. 01, 2008 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/FG
—
—
1.1 g
123
1
2
3
9.0
+0
–0.025
φ
1.0 ± 0.1
0.4
+0.1
–0
(0.65)
(90°)
φ
7.2
+0.3
–0.2
φ
φ6.2 ± 0.2
( 2.0)
φ
Emitting Point
2.45
1.5 ± 0.1
9 ± 1
3 – 0.45 ± 0.1
3.5 ± 0.2 0.3
Glass
φ2.54 ± 0.35
As of June, 2005
Unit: mm
4
4
(1.8)
HL6548FG
Rev.0 Aug. 01, 2008 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, includin g intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten hum an life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges gu aranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation cond itions and other characteristics.
OPJ bears no responsibility for failure or damage wh en used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to rep roduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Op
next Ja
p
an, Inc
.
Taka
g
i Bld
g
., 3F, 1-3-9, Iwamoto-cho, Chi
y
oda-ku, Tok
y
o 101-0032, Japan
Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
©2008 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 5.0
Japan (Japanese) http://www.opnext.com/jp/products/
Other area (English) http://www.opnext.com/products/
