R07DS0097EJ0300 Rev.3.00 Page 1 of 6
Sep 13, 2010
Preliminary Datasheet
BCR3PM-12LA
Triac
Low Power Use
Features
IT (RMS) : 3 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 20 mA (10 mA)Note5
Viso : 2000 V
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
Outline
2
13
2
13
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
RENESAS Package code:
PRSS0003AA-A
(Package name:
TO-220F)
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
R07DS0097EJ0300
(Previous: REJ03G0301-0200)
Rev.3.00
Sep 13, 2010
BCR3PM-12LA Preliminary
R07DS0097EJ0300 Rev.3.00 Page 2 of 6
Sep 13, 2010
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 3.0 A
Commercial frequency, sine full wave
360° conduction, Tc = 107C
Surge on-state current ITSM 30 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 3.7 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3 W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 6 V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125C, VDRM applied
On-state voltage VTM — — 1.5 V
Tc = 25C, ITM = 4.5 A,
Instantaneous measurement
V
FGT — — 1.5 V
V
RGT — — 1.5 V
Gate trigger voltageNote2
V
RGT — — 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 20Note5 mA
I
RGT — — 20Note5 mA
Gate trigger currentNote2
I
RGT — — 20Note5 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 4.5 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5 — — V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR3PM-12LA Preliminary
R07DS0097EJ0300 Rev.3.00 Page 3 of 6
Sep 13, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
3.80.6 1.4 2.23.01.01.8 2.6 3.4
10
2
10
1
10
0
10
–1
5
7
2
3
5
7
2
3
5
7
2
3
10
0
10
1
10
2
37253725
40
30
20
0
5
10
15
25
35
10
2
7
5
3
2
7
5
3
2
7
5
3
2
10
1
10
0
10
–1
–60 –40–20 0 20 406080 100120140
23 57101
10023 5710223 57103
23 57100
10–123 57
23 5710323 57
10123 57102
102
–60 –40–20 0 20 406080100120140
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
3
7
5
3
2
7
5
3
2
10
2
10
1
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
Tj = 25°C
PG(AV) = 0.3W
PGM = 3W
VGT
IRGT I
IFGT I, IRGT III VGD = 0.2V
IGM =
0.5A
Typical Example
IRGT III
IFGT I, IRGT I
Typical Example
BCR3PM-12LA Preliminary
R07DS0097EJ0300 Rev.3.00 Page 4 of 6
Sep 13, 2010
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)× 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)× 100 (%)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
00.5 1.01.5 2.04.03.02.5 3.5 00.5 1.01.5 2.04.03.02.5 3.5
0
20
40
80
60
100
120
140
160
00.5 1.01.5 2.02.5 3.04.03.5
0
20
40
80
60
100
120
140
160
0
20
40
80
60
100
120
140
160
01.51.00.5 2.02.5 3.0
105
7
5
3
2
7
5
3
2
7
5
3
2
104
103
102
–60 –40–20 0 20 406080 100120140–60 –40–20 0 20 406080 100120140
103
7
5
3
2
7
5
3
2
102
101
360° Conduction
Resistive,
inductive loadsCurves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
Typical ExampleTypical Example
BCR3PM-12LA Preliminary
R07DS0097EJ0300 Rev.3.00 Page 5 of 6
Sep 13, 2010
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)× 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC)× 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
–60 –40–20 0 20 406080 100120140–60 –40–20 0 20 406080100120140
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
1000
20
40
80
60
100
120
140
160
330Ω
330Ω
330Ω
6Ω
6Ω
6V
6V
A
V
A
V
2
3
5
7
2
3
5
7
7
101
100
23 57102
10123 5710323 57104
0
20
40
80
60
100
120
160
140
103
7
5
3
2
7
5
3
2
102
101
100101102
37253725
100101102
37253725
6Ω
6V A
V
T2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c Typical Example
Tj = 125°C
I
T = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
Typical Example
IFGT I
IRGT I
IRGT III
BCR3PM-12LA Preliminary
R07DS0097EJ0300 Rev.3.00 Page 6 of 6
Sep 13, 2010
Package Dimensions
SC-67 2.0g
MASS[Typ.]
⎯PRSS0003AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
TO-220F
5.2
10.5Max
5.0
17
3.6
13.5Min
8.51.2
0.8
2.542.540.52.6
4.5
2.8
1.3Max
φ3.2±0.2
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name BCR3PM-12LA
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR3PM-12LA-A8
Note : Please confirm the specification about the shipping in detail.
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