IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION SOT-223 D G G D * Halogen-free According to IEC 61249-2-21 Definition * Surface Mount * Available in Tape and Reel * Dynamic dV/dt Rating * Repetitive Avalanche Rated * Logic-Level Gate Drive * RDS(on) Specified at VGS = 4 V and 5 V * Fast Switching * Compliant to RoHS Directive 2002/95/EC S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb SOT-223 SiHLL110-GE3 IRLL110PbF SiHLL110-E3 IRLL110 SiHLL110 SOT-223 IRLL110TRPbFa SiHLL110T-E3a IRLL110TRa SiHLL110Ta Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at 5.0 V TC = 25 C TC = 100 C ID IDM Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS Single Pulse Avalanche Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C PD TA = 25 C Maximum Power Dissipation (PCB Mount)e c dV/dt Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 100 10 1.5 0.93 12 0.025 0.017 50 1.5 0.31 3.1 2.0 5.5 - 55 to + 150 300d UNIT V A W/C mJ A mJ W V/ns C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91320 S10-1257-Rev. C, 31-May-10 www.vishay.com 1 IRLL110, SiHLL110 Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - 60 Maximum Junction-to-Case (Drain) RthJC - 40 UNIT C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 100 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.12 - V/C VGS(th) VDS = VGS, ID = 250 A 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = 10 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 125 C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = 5.0 V ID = 0.90 Ab - - 0.54 VGS = 4.0 V ID = 0.75 A - - 0.76 0.57 - - - 250 - - 80 - - 15 - - - 6.1 - - 2.6 VDS = 25 V, ID = 0.90 A A S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 5.0 V ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.3 Turn-On Delay Time td(on) - 9.3 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 50 V, ID = 5.6 A, Rg = 12 , RD = 8.4 tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact - 47 - - 16 - - 18 - - 4.0 - - 6.0 - - - 1.5 - - 12 pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 C, IS = 1.5 A, VGS = 0 S Vb TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb - - 2.5 V - 110 130 ns - 0.50 0.65 C Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91320 S10-1257-Rev. C, 31-May-10 IRLL110, SiHLL110 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91320 S10-1257-Rev. C, 31-May-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRLL110, SiHLL110 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91320 S10-1257-Rev. C, 31-May-10 IRLL110, SiHLL110 Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 5V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91320 S10-1257-Rev. C, 31-May-10 www.vishay.com 5 IRLL110, SiHLL110 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 5V 0.01 tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 12 V 5.0 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91320 S10-1257-Rev. C, 31-May-10 IRLL110, SiHLL110 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91320. Document Number: 91320 S10-1257-Rev. C, 31-May-10 www.vishay.com 7 Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. Document Number: 91363 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000