A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifications are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 25 mA 36 V
BVCEO IC = 25 mA 16 V
BVEBO IE = 5.0 mA 4.0 V
ICES VCE = 15 V 5.0 mA
hFE VCE = 5.0 V IC = 1.0 A 40 75 150 ---
Cob VCB = 15 V f = 1.0 MHz 75 100 pF
GPE
η VCC = 12.5 V Pout = 30 W f = 175 MHz 10
60 11
70 DB
%
ψ VCC = 15.5 V PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
NPN SILICON RF POWER TRANSISTOR
MRF1946A
DESCRIPTION:
The MRF1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
IC 8.0 A
VCE 16 V
VCB 36 V
PDISS 100 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 1.75 °C/W
PACKAGE STYLE .380" 4L STUD
MINIMUM
inches / mm
.00 4 / 0 .1 0
.37 0 / 9 .4 0
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.45 0 / 1 1 .4 3
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.10 0 / 2 .5 4
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC -2A
C
B
E E
