UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-015,E
HIGH CURRENT SWITCHING
APPLICATION
.
FEATURES
*Low collector saturation voltage
V
CE(SAT)
=-0.4V(max.) at Ic=-3A
*High speed switching time: t
S
=1.0µs(Typ.)
*Complementary to 2SC2562
TO-220
1TO-252
TO- 251
1
1
1
TO-220F
*Pb-free plating product number: 2SA1012L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2SA1012-x-TA3-T 2SA1012L-x-TA3-T TO-220 B C E Tube
2SA1012-x-TF3-T 2SA1012L-x-TF3-T TO-220F
B C E Tube
2SA1012-x-TM3-T 2SA1012L-x-TM3-T TO-251 B C E Tube
2SA1012-x-TN3-R 2SA1012L-x-TN3-R TO-252 B C E Tape Reel
2SA1012-x-TN3-T 2SA1012L-x-TN3-T TO-252
B C E Tube
2SA1012L-x-TA3-T (1)Pac k ing T y pe
(2)P ac kage Ty pe
(4)Lead Plating
(1) T: Tu be, R: Tap e Re el
( 2 ) TA3 : TO- 2 2 0, TF 3: TO- 2 2 0F, TM3 : TO- 2 5 1,
TN 3: TO-252
(4) L: Lead Free Plating, Blan k: Pb/Sn
(3)Rank (3) x: ref erence to Classification of h
FE1
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw
QW-R203-015,E
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-50 V
Collector-Emitter Voltage V
EBO
-5 V
Peak Collector Current I
C
-5 A
Power Dissipation P
D
25 W
Junction Temperature T
J
150
℃
Storage Temperature T
STG
-55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25 , ℃unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
CBO
I
C
=-100µA, I
E
=0 -60 V
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=-10mA, I
B
=0 -50 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
=-100µA, I
C
=0 -5 V
Collector Cut-off Current I
CBO
V
CB
=-50V, I
E
=0 -1.0 µA
Emitter Cut-off Current I
EBO
V
EB
=-5V, I
C
=0 -1.0 µA
h
FE1
V
CE
=-1V, I
C
=-1A 70 240
DC Current Gain h
FE2
V
CE
=-1V, I
C
=-3A 30
Collector-Emitter Saturation Voltage V
CE (SAT)
I
C
=-3A, I
B
=-0.15A -0.2 -0.4 V
Base-Emitter Saturation Voltage V
BE (SAT)
I
C
=-3A, I
B
=-0.15A -0.9 -1.2 V
Transition frequency f
T
V
CE
=-4V, I
C
=-1A 60 MHz
Collector output capacitance Cob V
CB
=-10V, I
E
=0, f=1MHz 170 pF
Turn-on time t
ON
0.1 µs
Storage time t
S
1.0 µs
Switching time Fall time t
F
0.1 µs
CLASSIFICATION of h
FE1
RANK O Y
RANGE 70 ~ 140 120 ~ 240
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw
QW-R203-015,E
■ TYPICAL CHARACTERISTICS
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw
QW-R203-015,E
TYPICAL CHARACTERICS( cont.)
Collector current Ic(A)
10000
3000
1000
300
100
30
10
3
1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
Transition frequency fT(MHz)
fT-Ic
VCE= -5V
f=1MHz
Tc=25℃
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably ex pected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
