T2V62A T2V75 TZVB2A TZv100 TZV110A 12ZV130 TZV150A TZV170 TZV180A ZAG 10 2AG13 ZAG18 ZAG24 ZAG33 2AG43 ZAG56 ZAG75 ZAG 100 ZAG 130 ZAG170 AD611A BXY50 BXY6O CXxY11C09 CXY11C CXY13E11 CXY14C CXY16A11 CXY16C08 CxY16C11 CXY 16E08 CXV16E11 CXT17A CXxv17D CXY18A15 CXY18A IN ORDER OF (1) USE TECHNICAL DATA . ax . 58.9-65.1V at IT20mA;VR53V:1 58A1R at VR 5.0uA max;Max Clamp. 85V. : . at : at . . 67.5-82.5V at IT20mA;VR60.7V;l 46A;IR at VR 5.0UA Clamp.Volt. 108V. at ax at i 77.9-86.1V at IT16 VR70.1V31 ax 44A;\R at VR 5.0uA max;Max Clamp.Volt. 113V. : at - at . ax 90-110V at 1T12mA; 1V;1 34A;IR at VR 5.0uA max;Max Clamp.Volt. 144V. at at : 105-116V at IT12MA;VR94V;IR(surge)Max 152A;IR at VR 5.0uA max;Max Clamp.Volt. 152V. at ; at : ax . 117-143V at 1T10mA;VR105V; Max 187A;IR at VR 5.0uA max;Max Clamp.Volt. 187V. at at : . 143-158V at IT8.0mA;VR128V;1 Max 207A;IR at VR 5.0uA max;Max Clamp.Volt. 207V. - at at : 153-187V at IT5.OmA;VR138V;! Max 244A/AR at VR 5.0UA max;Max Clamp.Volt. 244V. - at . ax at : BV 171-189V at IT5.OmA;VR154V;1 246A;IR at VR 5.0uA max;Max Clamp.Volt. 246V. at Clamp Volt 15V; 10V;PRSM 3 at 1.0ms at 1. Clamp Volt 19V; 13 M 3.0kW at 1.0ms DV; at 1: Clamp Volt 26.5V; 18V;PRSM 3.0kW at 1.0ms ; : at Clamp Volt 34.7V; 24V;PRSM 3.0kW at 1.0ms : at 1) Clamp Volt 47.7V; 33V;PRSM 3.0kW at 1.0ms . : at 1. Clamp Volt 61.9V; 43V;PRSM 3.0kW at 1.0ms Ve at Clamp Volt 80.5V; 5 3.0kW at 1.0ms : at Clamp Volt 108V; 75V;PRSM 3.0kW at 1.0ms ; at 1. Clamp Volt 144V; 1 3.0kW at 1.0ms ; A at 1: Clamp Volt 187V; 130V;PRSM 3.0kW at 1.0ms : at 1. Clamp Volt 244V; 170V;PRSM 3.0kW at 1.0ms : at 1. IMPATT to 12 GHz;Pt.30W min:n-2.5 percent min. Impatt Diode;Po W;8.0-1 Volt 91V;Current 135mA;CT QOOFF;Eff 5.0%;Ir 10UA max. mpatt 312- max. Impatt 750mW;6-8GHz;Volt. 120V;Current 125mA;CT 970fF 5.0%;Ir 10uA max. Gunn effect device;X Band;Freq 8.0GHz-10GHz;PO 15mW;Vp 8.0V;Ip 200mA max. ; 5 max. Gunn Effect Device;X band Po 15mW;Ptot 1 .0-12GHz. 4 ; p max. Gunn effect device:X 10GHz-12GHz;PO 30mW:Vp 8.0V;Ip 300mA max. Gunn Effect Device: J PO 15mW: Ptot 1.0W; 12-18GHz. . Vp max. Gunn effect device;X 10GHz-12G 50mW:Vp 8.0V;lp 400mA max. m : Gunn effect device;X Band;Freq 7.0GHz-9.0GHz;PO 100mW;Vp 10V;lp 9OOmA max. nn . P p max. Gunn effect device;X 10GHz-12GHz;PO 100mW:Vp 8.0V: 800mA max. . rrent . Gunn effect device:X Band;Freq 7.0GHz-9.0GHz;PO 300mW;Vp 10V;Ip 1.3A max. . "Vp 8. p max. Gunn effect device:X 10GHz-12GHz;PO 300mW;Vp 8.0V;Ip 1.3A max. . rrent . Gunn Effect Device:C Band;Pt 4.0W;Freq. 4.0G-8.0G;Po VP 11V max;IP 600mA. Gunn Effect Device:C Band:Pt 9.0W:Freq. 4.0G-8.0G;Po 200mW:VP 11V maxjIP 1.1A. Vp max. Gunn effect device;Ku Band;Freq 14GHz-16GHz;PO 50mW;Vp 6.0V;Ip 400mA max. u Pp max. Gunn Effect Device;J 12-18GHz;VP 9 max;IP 800mA.