Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector - Emitter Voltage VCEO 30 25 Vdc Collector - Base Voltage VCBO 40 30 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range CASE 29-04, STYLE 1 TO-92 (TO-226AA) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max 30 25 -- -- 40 30 -- -- V(BR)EBO 5.0 -- Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 50 nAdc Characteristic Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CEO 2N4123 2N4124 Vdc V(BR)CBO 2N4123 2N4124 Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Vdc 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 2N4123 2N4124 50 120 150 360 2N4123 2N4124 25 60 -- -- Characteristic Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE (IC = 50 mAdc, VCE = 1.0 Vdc) -- Collector - Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) -- 0.3 Vdc Base - Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) -- 0.95 Vdc 250 300 -- -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz 2N4123 2N4124 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 8.0 pF Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb -- 4.0 pF 50 120 200 480 2N4123 2N4124 2.5 3.0 -- -- 2N4123 2N4124 50 120 200 480 -- -- 6.0 5.0 Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) Current Gain -- High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) hfe 2N4123 2N4124 -- |hfe| (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) -- NF dB 2N4123 2N4124 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 200 10 100 5.0 TIME (ns) CAPACITANCE (pF) 7.0 Cibo 3.0 ts 70 50 td 30 tf Cobo 2.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 1. Capacitance 2 tr 20 20 30 40 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 2. Switching Times Motorola Small-Signal Transistors, FETs and Diodes Device Data AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 f = 1 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) IC = 1 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 W IC = 1 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 20 40 0 0.1 100 0.2 0.4 Figure 3. Frequency Variations 40 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 100 Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) hfe , CURRENT GAIN 300 200 100 70 50 30 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 5. Current Gain 10 5.0 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 hie , INPUT IMPEDANCE (k ) 5.0 Figure 6. Output Admittance 20 5.0 2.0 1.0 0.5 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 7. Input Impedance Motorola Small-Signal Transistors, FETs and Diodes Device Data 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (mA) Figure 8. Voltage Feedback Ratio 3 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 VCE = 1 V +25C 0.7 - 55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 TJ = 25C VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltages 4 100 200 1.0 0.5 +25C to +125C qVC for VCE(sat) 0 - 55C to +25C - 0.5 - 55C to +25C - 1.0 +25C to +125C qVB for VBE(sat) - 1.5 - 2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) 180 200 Figure 12. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 Motorola reserves the right to make changes without further notice to any products herein. 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