1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N4123 2N4124 Unit
Collector–Emitter Voltage VCEO 30 25 Vdc
Collector–Base Voltage VCBO 40 30 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC200 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE = 0) 2N4123
2N4124
V(BR)CEO 30
25 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0) 2N4123
2N4124
V(BR)CBO 40
30 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) ICBO — 50 nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Order this document
by 2N4123/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123
2N4124
hFE 50
120
25
60
150
360
—
—
—
Collector–Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) — 0.3 Vdc
Base–Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — 0.95 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
2N4124
fT250
300 —
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF
Collector–Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb — 4.0 pF
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) 2N4123
2N4124
hfe 50
120 200
480
—
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124
|hfe|2.5
3.0
50
120
—
—
200
480
—
Noise Figure
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, 2N4123
f = 1.0 kHz) 2N4124
NF —
—6.0
5.0
dB
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.00.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME (ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. Frequency Variations
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 4. Source Resistance
RS, SOURCE RESISTANCE (k
Ω
)
0
NF, NOISE FIGURE (dB)
1 2 4 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1 kHz IC = 1 mA
IC = 0.5 mA IC = 50
m
A
IC = 100
m
A
SOURCE RESISTANCE = 200
W
IC = 1 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 500
W
IC = 100
m
A
SOURCE RESISTANCE = 1 k
Ω
IC = 50
m
A
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
hie
0.1 0.2 1.0 2.0 5.0 10
0.5
0.1 0.2 1.0 2.0 5.0 10
0.5
2
1
0.1 0.2 1.0 2.0 5.0 10
0.5
m
–4
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
hfe, CURRENT GAIN
, INPUT IMPEDANCE (k )
Ω
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
STATIC CHARACTERISTICS
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1 V
TJ = +125
°
C
+25
°
C
–55
°
C
Figure 10. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1 mA
TJ = 25
°
C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
–0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
–1.0
–1.5
–2.0
200
TJ = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
+25
°
C to +125
°
C
–55
°
C to +25
°
C
+25
°
C to +125
°
C
–55
°
C to +25
°
C
q
VC for VCE(sat)
q
VB for VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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2N4123/D
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