NSBC115TF3T5G - ON Semiconductor - Datasheet.Directory

September, 2008 − Rev. 3

1Publication Order Number:

NSBC114EF3/D

NSBC114EF3T5G Series

Preferred Devices

Digital Transistors (BRT)

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−1123 package which is designed for low power surface mount

applications.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SOT−1123 Package can be Soldered using Wave or Reflow.

•Available in 4 mm, 8000 Unit Tape & Reel

•These are Pb−Free Devices

•These are Halide−Free Devices

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter Voltage VCEO 50 Vdc

Collector Current IC100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NPN SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

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MARKING DIAGRAM

SOT−1123

CASE 524AA

STYLE 1

x = Device Code

M = Date Code

G or G= Pb−Free Package

x M

ORDERING INFORMATION

Device Package Shipping†

NSBC114EF3T5G SOT−1123

(Pb−Free)

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

NSBC114EF3T5G Series

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C (Note 1)

Derate above 25°C

PD254

2.0

mW/°C

Thermal Resistance (Note 1)

Junction-to-Ambient

RqJA 493 °C/W

Total Device Dissipation

TA = 25°C (Note 2)

Derate above 25°C

PD297

2.4

mW/°C

Thermal Resistance Junction-to-Ambient (Note 2) RqJA 421 °C/W

Thermal Resistance Junction−to−Lead 3 (Note 1) RqJL 193 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

DEVICE MARKING AND RESISTOR VALUES

Device Marking* R1 (k) R2 (k) Package Shipping†

NSBC114EF3T5G A (0°) 10 10

SOT−1123

(Pb−Free) 8000/Tape & Reel

NSBC124EF3T5G L (0°) 22 22

NSBC144EF3T5G D (0°) 47 47

NSBC114YF3T5G J (0°) 10 47

NSBC123TF3T5G T (0°) 2.2 ∞

NSBC143EF3T5G P (0°) 4.7 4.7

NSBC143ZF3T5G R (0°) 4.7 47

NSBC123JF3T5G V (0°) 2.2 47

NSBC144WF3T5G Q (0°) 47 22

NSBC114TF3T5G K (90°) 10 ∞

NSBC115TF3T5G P (90°) 100 ∞

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*(XX°) = Degree rotation in the clockwise direction.

NSBC114EF3T5G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc

Emitter−Base Cutoff Current NSBC114EF3T5G

(VEB = 6.0 V, IC = 0) NSBC124EF3T5G

NSBC144EF3T5G

NSBC114YF3T5G

NSBC114TF3T5G

NSBC123TF3T5G

NSBC115TF3T5G

NSBC143EF3T5G

NSBC143ZF3T5G

NSBC123JF3T5G

NSBC144WF3T5G

IEBO −

−

0.5

0.2

0.1

0.2

0.9

4.0

0.1

1.5

0.18

0.2

0.13

mAdc

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO 50 − − Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain NSBC114EF3T5G

(VCE = 10 V, IC = 5.0 mA) NSBC124EF3T5G

NSBC144EF3T5G

NSBC114YF3T5G

NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G

NSBC143EF3T5G

NSBC143ZF3T5G

NSBC123JF3T5G

NSBC144WF3T5G

hFE 35

160

100

140

350

200

140

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

NSBC114EF3T5G/NSBC124EF3T5G/NSBC144EF3T5G

NSBC114YF3T5G/NSBC144WF3T5G/NSBC123JF3T5G

(IC = 10 mA, IB = 1 mA)

NSBC143EF3T5G/NSBC143ZF3T5G/NSBC123TF3T5G/

NSBC114TF3T5G

(IC = 10 mA, IB = 5 mA)

NSBC115TF3T5G

VCE(sat) − − 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114TF3T5G

NSBC114EF3T5G

NSBC124EF3T5G

NSBC114YF3T5G

NSBC123TF3T5G

NSBC143EF3T5G

NSBC143ZF3T5G

NSBC123JF3T5G

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBC144EF3T5G

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBC144WF3T5G

(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) NSBC115TF3T5G

VOL

−

0.2

Vdc

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

NSBC114EF3T5G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS (Note 4)

Characteristic Symbol Min Typ Max Unit

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

NSBC114EF3T5G/NSBC124EF3T5G/NSBC144EF3T5G

NSBC144YF3T5G/NSBC143EF3T5G/NSBC123JF3T5G

NSBC144WF3T5G

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

NSBC123TF3T5G/NSBC143ZF3T5G/NSBC114TF3T5G/

NSBC115TF3T5G

VOH 4.9 − − Vdc

Input Resistor NSBC114TF3T5G

NSBC114EF3T5G

NSBC124EF3T5G

NSBC144EF3T5G

NSBC114YF3T5G

NSBC123TF3T5G

NSBC143EF3T5G

NSBC143ZF3T5G

NSBC123JF3T5G

NSBC144WF3T5G

NSBC115TF3T5G

R1 7.0

7.0

15.4

32.9

7.0

1.5

3.3

1.54

32.9

2.2

4.7

2.2

100

28.6

61.1

2.9

6.1

2.86

61.1

130

Resistor Ratio

NSBC114EF3T5G/NSBC124EF3T5G/

NSBC144EF3T5G/NSBC123EF3T5G

NSBC114YF3T5G

NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G

NSBC143ZF3T5G

NSBC123JF3T5G

NSBC144WF3T5G

R1/R2

0.8

0.17

−

0.055

0.038

1.7

1.0

0.21

−

0.1

0.047

2.1

1.2

0.25

−

0.185

0.056

2.6

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

NSBC114EF3T5G Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EF3T5G

0.01

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 1. VCE(sat) vs. IC

IC, COLLECTOR CURRENT (mA)

VCE(SAT), COLLECTOR−TO−EMITTER SATURATION

VOLTAGE (V)

TA=25°C

TA= 150°C

TA=−55°C

1.0

100

1000

0.1 1 10 100

VCE = 10 V

150°C

25°C

−55°C

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

0.80

1.00

1.20

1.40

1.60

1.80

2.00

2.20

2.40

0 5 10 15 20 25 30 35 40 45 50

Figure 3. Output Capacitance

VCB, COLLECTOR BASE VOLTAGE (V)

COBO, OUTPUT CAPACITANCE (pF)

0.01

0.1

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

150°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 4. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (V)

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 5. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (V)

150°C

25°C

−55°C

IC/IB = 10

NSBC114EF3T5G Series

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TYPICAL APPLICATIONS FOR NPN BRTs

LOAD

+12 V

Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

OUT

VCC

ISOLATED

LOAD

FROM mP OR

OTHER LOGIC

+12 V

Figure 7. Open Collector Inverter:

Inverts the Input Signal

Figure 8. Inexpensive, Unregulated Current Source

NSBC114EF3T5G Series

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PACKAGE DIMENSIONS

SOT−1123

CASE 524AA−01

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

DIM MIN NOM MAX

MILLIMETERS

A0.34 0.37 0.40

b0.15 0.22 0.28

c0.07 0.12 0.17

D0.75 0.80 0.85

E0.55 0.60 0.65

0.95 1.00 1.05

L0.05 0.10 0.15

0.013 0.015 0.016

0.006 0.009 0.011

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.037 0.039 0.041

0.002 0.004 0.006

MIN NOM MAX

INCHES

−Y−

−X−

0.08 (0.0032) XY

0.40

0.30

0.90

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

e−−− −−−−

b1 0.10 0.15 0.20 0.004 0.006 0.008

0.35

0.25

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.35 0.40 0.014 0.016

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,

affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury

or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an

Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

NSBC114EF3/D

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