BAT 18 ...
Oct-07-19991
Silicon RF Switching Diode
• Low-loss VHF / UHF switch above 10 MHz
• PIN diode with low forward resistance
1
2
3
VPS05161
BAT 18-05 BAT 18-06BAT 18-04BAT 18
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
13
EHA07002
Type Marking Pin Configuration Package
BAT 18
BAT 18-04
BAT 18-05
BAT 18-06
A2s
AUs
ASs
ATs
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/2
3 = A1/2
SOT-23
SOT-23
SOT-23
SOT-23
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Junction - ambient 1) RthJA ≤ 450 K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 18 ...
Oct-07-19992
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Reverse current
VR = 20 V, TA = 60 °C
IR- - 200
Forward voltage
IF = 100 mA
VF- 0.38 1.2 mV
AC characteristics
pF
Diode capacitance
VR = 20 V, f = 1 MHz
0.75-
CT1
Forward resistance
IF = 5 mA, f = 100 MHz
Ωrf- 0.4 0.7
- 2 - nHSeries inductance Ls
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHD07019BAT 18...
C
T
R
V
10 20 V 30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
pF
2.0
Forward resistance rf = f (IF)
f = 100MHz
10
EHD07020BAT 18...
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
