TOSHIBA TLP627,TLP627-2,TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP627, TLP627-2, TLP627-4 PROGRAMMABLE CONTROLLERS. Dc - OUTPUT MODULE. TELECOMMUNICATION. The TOSHIBA TLP627, -2, and -4 consist of a gallium arsenide infreared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP627-2 offers two isolated channels in a eight lead plastic DIP, while the TLP627-4 provide four isolated channels per package. Unit in mm 73 [2 TLP627 w a oO H ot is Te 2 sa 4.58 + 0.25 96) 7.62 + 0.25 a ol 1240.15] I 05 +0. 7.85 ~ 8.80 2.5MIN. 2.54 0.26 11-6B2 TOSHIBA 11-5B2 Weight : 0.26 e Collector-Emitter Voltage : 300V (Min.) e Current Transfer Ratio 1000% (Min.) e Isoration Voltage 5000Vrms (Min.) e UL Recognized : UL1577, File No. E67349 MADE IN JAPAN MADE IN THAILAND UL Recognized | E67349 *1 | E152349 *1 BSI Approved | 7426, 7427 *2 |7426, 7427 #2 *1 UL1577 *2 BS EN60065 : 1994, BS EN60950 : 1992 PIN CONFIGURATIONS (TOP VIEW) TLP627 TLP627-2 TLP627-4 20 13 20 17 20 N15 1 : ANODE 2 : CATHODE 30 16 30 } 14 4 : COLLECTOR ar hs 4 13 1, 3 : ANODE 2,4:CATHODE 51 1] 16 5, 7 : EMITTER <4 6, 8 : COLLECTOR 6 IEG 8 13 1,3,5,7 : ANODE 2,4,6,8 : CATHODE 9,11,13,15 : EMITTER 10, 12, 14,16 : COLLECTOR TLP627-2 LH] co Hl~ Ho 6440.25 =u ~F of au 4 9.66 + 0.26 7.62 + 0.25 0.15 3.652505 0.a+ 0.25 1.24045 oA 0.25 26.08, 05#0.1 eT 7.85~8.80 2.5MIN,] 2.544025 W1-10C4 TOSHIBA 11-10C4 Weight : 0.54g TLP627-4 6410.25 =u ~e oF su oF 3a ea 19.82 + 0.25 8 7-82 0.25 i) 0,25 "05 le 05401 124015 7.85 ~ 8.80 25MIN. 0.840.25 2544025 17-2043, TOSHIBA 11-20A3 Weight : 1.lg 961001EBC2 TOSHIBA Semiconductor Reliability Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the 1998-02-27 1/7TOSHIBA TLP627,TLP627-2,TLP627-4 MAXIMUM RWTINGS (Ta = 25C) RATING CHARACTORISTIC SYMBOL TLp627 TLP627-2 UNIT TLP627-4 Forward Current Ip 60 50 mA Forward Current Darating Alp /C -0.7 (Ta=39C) | -0.5(Ta= 25C) | mA/C Pulse Forward Current Irp 1(100s pulse, 100pps) A A Power Dissipation (1 Cireuit) | Pp 100 70 mW 4 | Power Dissipation Derating (Ta= 25C, 1 Circuit) aPpic he O4 maw C Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 300 V me | Emitter-Collector Voltage VECO 0.3 Vv o Collector Current Ic 150 mA 0 gs 5 Collector Power Dissipation Pc 150 (*300) 100 mW es (1 Circuit) & | Collector Power Dissipation Derating 3 fe 3 Q (Ta= 25C, 1 Circuit) APC /C 1.5 (#*-3.5) 1.0 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature Told 260 (10sec) C Total Package Power Dissipation Pr 250 (*320) 150 mW (1 Circuit) Total Package Power Dissipation Derating 6 a 5 (a=25C, 1 Cireait) APp/C | 2.5 (*3.2) -15 mW /C Isolation Voltage BVs 5000 (AC, Imin., R.H.= 60%) Vrms * [p=20mA Max RECOMMENDED OPERATING CONDITIONS CHARACTERICTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Vcc 200 Vv Forward Current Ip 16 25 | mA Collector Current Io 120 | mA Operating Temperature Topr 25 85 C 961001 EBC2" @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-27 2/7TOSHIBA TLP627,TLP627-2,TLP627-4 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VE Ip=10mA 1.0 1.15 | 1.3 Vv A Reverse Current IR VR=5V 10 | wA Capacitance Crp V=0, f=1MHz _ 30 _ pF Collector-Emitter I=0.1mA _ mw | Breakdown Voltage V(BR) CEO] Ic=0 300 Vv | Emitter-Collector a Breakdown Voltage V(BR) ECO) 'n=0.1mA 0.3 7 7 Vv a VoR=200V 10 | 200 A E | Collector Dark Current ICEO CE = ica) VcE=200V,Ta=85C | 20 pA A Capacitance Collector _ _ to Emitter COE V=0, f=1MHz 10]; pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Current Transfer Ratio Ic /Ip Ip=1mA, Vcp=1V 1000 | 4000 | % Saturated CTR Ic/Ip(gat)| Ip=10mA, Vog=1V 500 | | % Collector-Emitter I=10mA, Ip=1mA 1.0 V Saturation Volt VCE (sat) _ _ aturation Voltage Ic =100mA, Ip=10mA 03); 1.2 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. |} UNIT Capacitance Input to Output Cg Vg=0, f=1MHz 0.8 pF Isolation Resistance Rg Vg=500V R.H.=60% 5x10? | 1014 OD AC, 1 minute 5000 ly . rms Isolation Voltage BVsS AC, 1 second, in oil |10000; DC, 1 minute, in oil 10000} Vde 1998-02-27 3/7TOSHIBA TLP627,TLP627-2,TLP627-4 SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERICTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Rise Time tr Vco=10V A0 Fall Time te 15 _ = Ss Turn-on Time ton I=10mA _ 50 _ x Turn-off Time toff Rp = 1000 _ 15 Turn-on Time tON RL = 1800 (Fig.1) _ 5 _ Strage Time ty y LOV. Iw=1mA 40 US Tuen-off Time tOFF come Reem 80 Fig.1 SWITCHING TIME TEST CIRCUIT Ip R : Vcc If __ | LL " S Voc 0 VcRE VCE 9V 1V t t 1 ON -_ OFF 1998-02-27 4/7TOSHIBA TLP627,TLP627-2,TLP627-4 Ip Ta Pc Ta : e 2 a = 5 a & 9 TLPG627 9 TLP627 dp=20mA Max.) a of E@ TLP627-2, -4 a an a2 eo fs 5g pc] i) z z = TLP627 < <8 8 5 TLP6272, 4 wd 2 z -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) IFp DR IF VF ~ 1 q PULSE WIDTHS 100ys Ta=25C < & E 5 = 1 =) e es i S FE 9 2 5 a : 5 a S 0 5 mu 0.1 3 10 3 0 38 tot 8 10 0.6 0.8 1.0 12 14 1.6 1.8 DUTY CYCLE RATIO DR FORWARD VOLTAGE Vp (V) AVF/ATa Ip Irp VFP 1 a a ay & pe > B =e = Be Ss z 1 aS z me & > 23 5 2 2 oF > = = Ao & ge & PULSE WIDTH <10ys = 5 ad REPETITIVE ts a FREQUENCY = 100Hz & 9F9 2 Ta=25C 0.1 0.3 1 3 10 30 0.4 0.8 1.2 16 2.0 24 2.8 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vpp () 1998-02-27 5/7TOSHIBA Ic - VCE Ta=25C COLLECTOR CURRENT Ic (mA) Ip=0.5mA 0.6 0.8 1.0 12 14 1.6 1.8 COLLECTOR-EMITTER VOLTAGE Vcr (V) SWITCHING TIME Ry, Ta =25C Vec=10V torr Up=16mA) torr dp=1.6mA) ton (Up=1.6mA) SWITCHING TIME (us) ton (Ip=16mA) 30 100 300 1k 3k 10k LOAD RESISTANCE Ry (Q) CURRENT TRANSFER RATIO Ic/Ip (%) TLP627,TLP627-2,TLP627-4 Ic Ip COLLECTOR CURRENT Ic (mA) Ta=25C 0.2 0.5 1 3 5 10 30 50 FORWARD CURRENT Ip (mA) Ic/Ip Ip 0.3 0.5 1 3 5 10 30 50 FORWARD CURRNT If (mA) 1998-02-27 6/7TOSHIBA TLP627,TLP627-2,TLP627-4 : Ip VCE Ip Ta 10 Ta=85C 10 4 < = 3 10 a a = = z 0 z oO 10 D 107: , id , ig VCE=200V < a a oa P E 12] & z = 107? oO oO 107+ 1073 0 50 100 300 500 0 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VocgR (V) AMBIENT TEMPARETURE Ta (OC) Ic Ta Ic - Ta 120 3 100 z 2 2 80 & & 8 g B60 2 2 5 5 & ae & 40 & 2 Q 5 5 S 2 8 oO o 0 . -20 0 20 40 60 80 100 -20 0 20 40 60 80 100 AMBIENT TEMPARETURE Ta (C) AMBIENT TEMPARETURE Ta (C) 1998-02-27 7/7