ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series Transient Voltage Suppressors Micro-Packaged Diodes for ESD Protection http://onsemi.com The ESD5Z Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. SOD-523 CASE 502 PLASTIC STYLE 1 Specification Features: 0.047 x 0.032 (1.20 mm x 0.80 mm) Low Body Height: 0.028 (0.7 mm) Stand-off Voltage: 2.5 V - 12 V Peak Power up to 240 Watts @ 8 x 20 ms Pulse Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000-4-2 Level 4 ESD Protection IEC61000-4-4 Level 4 EFT Protection SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Pb-Free Packages are Available* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 1 Cathode 2 Anode MARKING DIAGRAM XX 1 M G Low Clamping Voltage Small Body Outline Dimensions: G 2 XX = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping ESD5ZxxxT1G SOD-523 Pb-Free 3,000 / Tape & Reel SZESD5ZxxxT1G SOD-523 Pb-Free 3,000 / Tape & Reel Device Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 10 1 Publication Order Number: ESD5Z2.5T1/D ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series MAXIMUM RATINGS Rating Symbol Value IEC 61000-4-2 (ESD) Contact Air 30 30 IEC 61000-4-4 (EFT) 40 ESD Voltage Per Human Body Model Per Machine Model 16 400 Unit kV Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25C Junction and Storage Temperature Range A kV V PD 200 mW TJ, Tstg -55 to +150 C TL 260 C Lead Solder Temperature - Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C I Parameter IR VF IT IPP Uni-Directional TVS Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. http://onsemi.com 2 V ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) VC (V) @ IPP = 5.0 A IT VC (V) @ Max IPP IPP (A) Ppk (W) C (pF) VC Per IEC61000-4-2 (Note 3) Device Marking Max Max Min mA Typ Max Max Max Typ ESD5Z2.5T1G ZD 2.5 6.0 4.0 1.0 6.5 10.9 11.0 120 145 ESD5Z3.3T1G ZE 3.3 0.05 5.0 1.0 8.4 14.1 11.2 158 105 ESD5Z5.0T1G ZF 5.0 0.05 6.2 1.0 11.6 18.6 9.4 174 80 ESD5Z6.0T1G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70 ESD5Z7.0T1G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65 ESD5Z12T1G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55 Device* Figures 1 and 2 See Below (Note 4) * Include SZ-prefix devices where applicable. Surge current waveform per Figure 5. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. ESD5Z5.0T1G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV contact per IEC 61000-4-2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV contact per IEC 61000-4-2 http://onsemi.com 3 ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series IEC61000-4-2 Waveform IEC 61000-4-2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000-4-2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D - Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 waveform. Since the IEC61000-4-2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 4 80 ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series PACKAGE DIMENSIONS SOD-523 CASE 502-01 ISSUE E -X- D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. -Y- E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE SIDE VIEW 2X L RECOMMENDED SOLDERING FOOTPRINT* 2X 1.80 0.48 2X 2X 0.40 L2 BOTTOM VIEW PACKAGE OUTLINE DIMENSION: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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