Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 10
1Publication Order Number:
ESD5Z2.5T1/D
ESD5Z2.5T1G Series,
SZESD5Z2.5T1G Series
Transient Voltage
Suppressors
Micro−Packaged Diodes for ESD Protection
The ESD5Z Series is designed to protect voltage sensitive components
from ESD and transient voltage events. Excellent clamping capability,
low leakage, and fast response time, make these parts ideal for ESD
protection on designs where board space is at a premium. Because of its
small size, it is suited for use in cellular phones, portable devices, digital
cameras, power supplies and many other portable applications.
Specification Features:
Low Clamping Voltage
Small Body Outline Dimensions:
0.047 x 0.032 (1.20 mm x 0.80 mm)
Low Body Height: 0.028 (0.7 mm)
Stand−off Voltage: 2.5 V − 12 V
Peak Power up to 240 Watts @ 8 x 20 ms Pulse
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
IEC61000−4−4 Level 4 EFT Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260C
Device Meets MSL 1 Requirements
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
SOD−523
CASE 502
PLASTIC
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 3 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
XX
12
M
G
G
(Note: Microdot may be in either location)
ESD5ZxxxT1G SOD−523
Pb−Free
3,000 /
Tape & Reel
*Date Code orientation may vary
depending upon manufacturing location.
SZESD5ZxxxT1G SOD−523
Pb−Free
3,000 /
Tape & Reel
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD)
Contact
Air
30
30
kV
IEC 61000−4−4 (EFT) 40 A
ESD Voltage
Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25CPD200 mW
Junction and Storage Temperature Range TJ, Tstg −55 to +150 C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM
(V)
IR (mA)
@ VRWM
VBR (V)
@ IT
(Note 2) IT
VC (V)
@ IPP =
5.0 A†
VC (V) @
Max IPP†
IPP
(A)†
Ppk
(W)†
C
(pF) VC
Max Max Min mA Typ Max Max Max Typ
Per
IEC61000−4−2
(Note 3)
ESD5Z2.5T1G ZD 2.5 6.0 4.0 1.0 6.5 10.9 11.0 120 145 Figures 1 and 2
See Below
(Note 4)
ESD5Z3.3T1G ZE 3.3 0.05 5.0 1.0 8.4 14.1 11.2 158 105
ESD5Z5.0T1G ZF 5.0 0.05 6.2 1.0 11.6 18.6 9.4 174 80
ESD5Z6.0T1G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70
ESD5Z7.0T1G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65
ESD5Z12T1G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55
* Include SZ-prefix devices where applicable.
†Surge current waveform per Figure 5.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
http://onsemi.com
4
IEC 61000−4−2 Spec.
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
50 W
50 W
Cable
TVS Oscilloscope
ESD Gun
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 5. 8 X 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
E
D
−X−
−Y−
b
2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D1.10 1.20 1.30
E0.70 0.80 0.90
A0.50 0.60 0.70
b0.25 0.30 0.35
c0.07 0.14 0.20
L0.30 REF
H1.50 1.60 1.70
12
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48
0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
ESD5Z2.5T1/D
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