TC74LVX174F/FT
2014-03-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74LVX174F, TC74LVX174FT
Hex D-Type Flip-Flop with Clear
The TC74LVX174F/FT is a high-speed CMOS hex D-flip flop
fabricated with silicon gate CMOS technology. Designed for use
in 3-V systems, it achieves high-speed operation while
maintaining the CMOS low power dissipation. This device is
suitable for low voltage and battery operated systems.
Information signals applied to D inputs are transfered to the Q
output on the positivegoing edge of the clock pulse. When the
CLR input is held low, the Q output are in the low logic level
independent of the other inputs.
An input protection circuit ensures that 0 to 5.5V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5V to 3V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Features
• High-speed: fmax = 180 MHz (typ.) (VCC = 3 V)
• Low power dissipation: ICC = 4 μA (max) (Ta = 25°C)
• Input voltage level: VIL = 0.8 V (max) (VCC = 3 V)
V
IH = 2.0 V (min) (VCC = 3 V)
• Power-down protection provided on all inputs
• Balanced propagation delays: tpLH ∼
−
tpHL
• Low noise: VOLP = 0.5 V (max)
• Pin and function compatible with 74HC174
TC74LVX174F
TC74LVX174FT
Weight
SOP16-P-300-1.27A : 0.18 g (typ.)
TSSOP16-P-0044-0.65A : 0.06 g (typ.)
Start of commercial production
1993-01
TC74LVX174F/FT
2014-03-01
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Pin Assignment (top view) IEC Logic Symbol
Truth Table
Inputs Outputs
CLR D CK Q
Function
L X X L Clear
H L L ⎯
H H H ⎯
H X Qn No change
X: Don’t care
System Diagram
CLR
CK
Q1
1
9
3
2
Q2
4
5
Q3
6
7
Q4
11
10
Q5
13
12
Q6
14
15
R
CK Q
D
R
CK Q
D
R
CK Q
D
R
CK Q
D
R
CK Q
D
R
CK Q
D
D1 D2 D3 D4 D5 D6
VCC
16
Q6
D6
D5
Q5
D4
15
14
13
12
11
10
CLR 1
2
3
4
5
6
7
Q1
D1
D2
Q2
D3
Q3 Q4
8GND 9 CK
(1)
(13)
(9)
(4)
(3)
(11)
(6)
Q1
D5
CK
D2
D1
D4
D3
D6 (14)
R
C1
1D
(12)
(2)
(7) Q3
Q5
Q2
(15)
(5)
(10) Q4
Q6
CLR
TC74LVX174F/FT
2014-03-01
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Absolute Maximum Ratings (Note)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5 to 7.0 V
DC input voltage VIN −0.5 to 7.0 V
DC output voltage VOUT −0.5 to VCC + 0.5 V
Input diode current IIK −20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 180 mW
Storage temperature Tstg −65 to 150 °C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 2.0 to 3.6 V
Input voltage VIN 0 to 5.5 V
Output voltage VOUT 0 to VCC V
Operating temperature Topr −40 to 85 °C
Input rise and fall time dt/dv 0 to 100 ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
2.0 1.5 ⎯ ⎯ 1.5 ⎯
3.0 2.0 ⎯ ⎯ 2.0 ⎯
H-level VIH ⎯
3.6 2.4 ⎯ ⎯ 2.4 ⎯
2.0 ⎯ ⎯ 0.5 ⎯ 0.5
3.0 ⎯ ⎯ 0.8 ⎯ 0.8
Input voltage
L-level VIL ⎯
3.6 ⎯ ⎯ 0.8 ⎯ 0.8
V
IOH = −50 μA 2.0 1.9 2.0 ⎯ 1.9 ⎯
IOH = −50 μA 3.0 2.9 3.0 ⎯ 2.9 ⎯
H-level VOH VIN = VIH
or VIL
IOH = −4 mA 3.0 2.58 ⎯ ⎯ 2.48 ⎯
IOL = 50 μA 2.0 ⎯ 0.0 0.1 ⎯ 0.1
IOL = 50 μA 3.0 ⎯ 0.0 0.1 ⎯ 0.1
Output voltage
L-level VOL VIN = VIH
or VIL
IOL = 4 mA 3.0 ⎯ ⎯ 0.36 ⎯ 0.44
V
Input leakage current IIN VIN = 5.5 V or GND 3.6 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA
Quiescent supply current ICC V
IN = VCC or GND 3.6 ⎯ ⎯ 4.0 ⎯ 40.0 μA
TC74LVX174F/FT
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Timing Requirements (input: tr = tf = 3 ns)
Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol Test Condition
VCC (V) Limit Limit
Unit
2.7 6.5 7.5 Minimum pulse width
(CK)
tW (L)
tW (H)
⎯
3.3 ± 0.3 5.0 5.0
ns
2.7 6.5 7.5 Minimum pulse width
(CLR ) tW (L) ⎯
3.3 ± 0.3 5.0 5.0
ns
2.7 7.5 8.5
Minimum set-up time ts ⎯
3.3 ± 0.3 5.0 6.0
ns
2.7 0 0
Minimum hold time th ⎯
3.3 ± 0.3 0 0
ns
2.7 4.5 4.5 Minimum removal time
(CLR ) trem ⎯
3.3 ± 0.3 3.0 3.0
ns
AC Characteristics (input: tr = tf = 3 ns)
Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol Test Condition
VCC (V) CL (pF) Min Typ. Max Min Max
Unit
15 ⎯ 7.6 14.5 1.0 17.5
tpLH 2.7
50 ⎯ 10.1 18.0 1.0 21.0
15 ⎯ 5.9 9.3 1.0 11.0
Propagation delay time
(CK-Q)
tpHL
⎯
3.3 ± 0.3
50 ⎯ 8.4 12.8 1.0 14.5
ns
15 ⎯ 7.9 15.0 1.0 18.5
2.7
50 ⎯ 10.4 18.5 1.0 22.0
15 ⎯ 6.2 9.7 1.0 11.5
Propagation delay time
(CLR -Q) tpHL ⎯
3.3 ± 0.3
50 ⎯ 8.7 13.2 1.0 15.0
ns
15 65 130 ⎯ 55 ⎯
2.7
50 45 60 ⎯ 40 ⎯
15 115 180 ⎯ 95 ⎯
Maximum clock frequency fmax ⎯
3.3 ± 0.3
50 65 95 ⎯ 55 ⎯
MHz
2.7 50 ⎯ ⎯ 1.5 ⎯ 1.5
Output to output skew tosLH
tosHL (Note 1)
3.3 ± 0.3 50 ⎯ ⎯ 1.5 ⎯ 1.5
ns
Input capacitance CIN (Note 2) ⎯ 4 10 ⎯ 10 pF
Power dissipation capacitance CPD (Note 3) ⎯ 29 ― ⎯ ⎯ pF
Note 1: Parameter guaranteed by design.
(tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn|)
Note 2: Parameter guaranteed by design.
Note 3: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption.
Average operating current can be obtained by the equation:
I
CC (opr) = CPD･VCC･fIN + ICC/6 (per F/F)
And the total CPD when n pcs. of F/F operate can be gained by the following equation:
C
PD (total) = 19 + 10･n
TC74LVX174F/FT
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Noise Characteristics (Ta = 25°C, input: tr = tf = 3 ns, CL = 50 pF)
Characteristics Symbol Test Condition
VCC (V)
Typ. Limit Unit
Quiet output maximum dynamic VOL VOLP ⎯ 3.3 0.3 0.5 V
Quiet output minimum dynamic VOL V
OLV ⎯ 3.3 −0.3 −0.5 V
Minimum high level dynamic input
voltage VIH VIHD ⎯ 3.3 ⎯ 2.0 V
Maximum low level dynamic input
voltage VIL VILD ⎯ 3.3 ⎯ 0.8 V
Input Equivalent Circuit
INPUT
TC74LVX174F/FT
2014-03-01
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Package Dimensions
Weight: 0.18 g (typ.)
TC74LVX174F/FT
2014-03-01
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Package Dimensions
Weight: 0.06 g (typ.)
TC74LVX174F/FT
2014-03-01
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