fiAMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR They are high voltage,high current devices for fast switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Vegosus) = 150 V (Min.) - BU807 = 200 V (Min.) - BU806 * Low Collector-Emitter Saturation Voltage - Vee(sat) = 1.5V (Max.) @ |, = 5.0A, Ip = 50 mA MAXIMUM RATINGS NPN BU806 BU807 8.0 AMPERE DARLINGTON POWER TRANSISTORS 150-200 VOLTS 60 WATTS YY TO-220 Characteristic Symbol BU806 BUs07 Unit Collector-Emitter Voltage Veeo 200 450 V Collector-Base Voltage Vepo 400 330 V Emitter-Base Voltage Vepo 6.0 Vv Collector Current - Continuous le 8.0 A - Peak 15 Base Current - Continuous lp 2.0 A Total Power Dissipation @T,=25C Py 60 Ww Derate above 25C 0.48 wc Operating and Storage Junction Ty: Tgt C Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 2.08 C 80 a E = 6 5 pO gm 40 5D a = 20 a 10 a 9 0 25 Tic) T.,, TEMPERATURE(C) FIGURE -1 POWER DERATING 100 125 150 123 HP 4 AL iE ml ar % | Di yo r PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 15.31 B 9.78 10.42 Cc 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 297 L 0.33 0.55 M 2.48 2.98 QO 3.70 3.90BU806, BU807 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C uniess otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (7) Vogosus) Vv (l_ = 100 mA, I, = 0) BU807 150 BU806 200 Collector Cutoff Current logs mA ( Veg = 330 V, Vee= 0 ) BU807 0.1 ( Veg = 400 V, Vag =0 ) BU806 0.1 Emitter Cutoff Current leso mA ( Vep= 6.0 V, 1, =0) 3.0 ON CHARACTERISTICS (1) Collector - Emitter Saturation Voltage VoE;sat) Vv (I, =5.0 A, I, = 50 mA) 1.5 Base - Emitter Saturation Voltage VeE(sat) Vv (I, =5.0 A, I, = 50 mA) 2.4 Diode Forward Voltage Ve Vv (|, =4.0A ) 2.0 SWITCHING CHARACTERISTICS Turn On Time Voc= 100V,I,= 5.0A ton 0.35(typ) us Storage Time vet oon -500mA t. 0.55(typ) us Fall Time ee t, 0.20(typ) us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%BU806,BU807 NPN ere nee nee aera acre ee eee eeeeeceeee eee eee e eee ene cece cere en ee eee e eee a DC CURRENT GAIN bre , DC CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 ic , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) 20 10 There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Voe limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypig=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tupigs150C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 a 2 oo o 2S = B ~- Bonding Wire Limit Second Breakdown - Thermally Limited BU807 T5950 T, 25C le , COLLECTOR CURRENT (Amp) = 3 BU806 0.04 10 20 50 100 200 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)