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04/14/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2460
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 TO-243AA* Die**
600V 20Ω0.25A VN2460N3 VN2460N8 VN2460NW
*Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-243AA
(SOT-89)
G D
S
D
TO-92
S G D
Order Number / Package
Product marking for TO-243AA:
VN4F❋
Where ❋ = 2-week alpha date code
2
Package ID (continuous)* ID (pulsed) Power Dissipation
θθ
θθ
θ
jc
θθ
θθ
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-243AA 0.2A 0.6A 1.6W†15 78 †0.2A 0.6A
TO-92 0.16A 0.5A 1W 125 170 0.16A 0.5A
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
BVDSS 600
VGS(th) Gate Threshold Voltage 1.5 4.0 V VGS = VDS , ID = 2.0mA
∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/°CV
GS = VDS , ID = 2.0mA
IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = Max Rating
1mAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 0.25 A VGS = 10V, VDS = 25V
RDS(ON) 25 VGS = 4.5V, ID = 100mA
20 VGS = 10V, ID = 100mA
∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/°CV
GS = 10V, ID = 100mA
GFS Forward Transconductance 50 mV
DS = 25V, ID = 100mA
CISS Input Capacitance 150
COSS Common Source Output Capacitance 50 pF
CRSS Reverse Transfer Capacitance 25
td(ON) Turn-ON Delay Time 10
trRise Time 10
td(OFF) Turn-OFF Delay Time 25
tfFall Time 20
VSD Diode Forward Voltage Drop 1.5 V VGS = 0V, ISD = 400mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VV
GS = 0V, ID = 2.0mA
ns
VGS = 0V, VDS = 25V
f = 1.0 MHz
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
Ω
Ω
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
VDD
Rgen
0V
0V
VN2460
3
Typical Performance Curves
VGS = 10V
01020304050
0
0.2
0.4
0.6
0.8
1.0
1.2
ID (Amperes)
VDS (Volts)
Output Characteristics
8V
6V
5V
4V
3V 0246810
0
0.1
0.2
0.3
0.4
0.5
Saturation Characteristics
ID (Amperes)
VDS (Volts)
VGS = 10V 8V
6V
5V
4V
3V
0.0 0.1 0.2 0.3 0.4 0.5
0.0
0.1
0.2
0.3
0.4
0.5
TA = -55°C
TA = 25°C
TA = 125°C
VDS = 25V
Transconductance vs. Drain Current
GFS (siemens)
ID (Amperes)
Power Dissipation vs. Case Temperature
PD (Watts)
TC (
°
C)
05075100 125 150
0
0.4
0.8
1.2
1.6
2.0
25
TO-92
SOT-89
ID (amperes)
VDS (Volts)
Maximum Rated Safe Operating Area
TO-92 (DC)
SOT-89 (DC)
SOT-89 (pulsed)
TO-92 (pulsed)
TC = 25°C
0.01
0.1
1.0
0.001 1 100010010
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1.0
SOT-89
PD = 1.6W
TC = 25°C
0
t
p
(seconds)
TO-92
PD = 1W
TC = 25°C
VN2460
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 222-8888 • FAX: (408) 222-4895
www.supertex.com
04/14/03
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
VGS = 4.5V
VGS = 10V
RDS(ON) (ohms)
ID (Amperes)
On Resistance vs. Drain Current
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) @ 2mA
RDS(on) @ 10V, 0.1A
VGS(TH) and RDS(ON) w/ Temperature
VGS(th) (normalized)
TJ (
°
C)
RDS(ON) (normalized)
Transfer Characteristics
ID (Amperes)
VGS (Volts)
0246810
0
0.1
0.2
0.3
0.4
0.5
VDS = 25V TA = -55°C
TA = 125°C
TA = 25°C
BVDSS (Normalized)
TJ (
°
C)
BV
DSS
Variation with Temperature
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
Capacitance vs. Drain Source Voltage
C (picofarads)
VDS (volts)
010203040
0
75
150
225
300
f = 1MHz
CISS
COSS
CRSS
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
0 1.0 2.0 3.0 4.0 5.0
0
2
4
6
8
10
VDS=10V
VDS=40V
ID = 0.5A
VN2460
