1
Subject to change without notice.
www.cree.com/wireless
CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specically for high efciency, high
gain and wide bandwidth capabilities, which makes the CGH55030F2/
CGH55030P2 ideal for C-band pulsed or CW saturated ampliers. The
transistor is available in both screw-down, ange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
Package Type: 440196 & 440166
PN: CGH55030P2 & CGH55030F2
Rev 3.2 – April 2012
FEATURES
• 4.5 to 6.0 GHz Operation
• 12 dB Small Signal Gain at 5.65 GHz
• 30 W typical PSAT
• 60 % Efciency at PSAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Ampliers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB Ampliers for Drivers and
Gain Blocks
2CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 7.0 mA 25˚C
Maximum Drain Current1IMAX 3A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ60 in-oz
Thermal Resistance, Junction to Case3RθJC 4.8 ˚C/W 85˚C
Case Operating Temperature3,4 TC-40, +150 ˚C 30 seconds
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
3 Measured for the CGH55030 at PDISS = 28 W.
4 See also, the Power Dissipation De-rating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 –2.3 VDC VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage VGS(Q) –-3.0 – VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current IDS 5.8 7.0 –AVDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA
RF Characteristics2 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain GSS 9.0 11.0 - dB VDD = 28 V, IDQ = 250 mA
Power Output3PSAT 20 30 – WVDD = 28 V, IDQ = 250 mA
Drain Efciency4η50 60 –%VDD = 28 V, IDQ = 250 mA, PSAT
Output Mismatch Stress VSWR - –10 : 1 YNo damage at all phase angles,
VDD = 28 V, IDQ = 250 mA, PSAT
Dynamic Characteristics
Input Capacitance CGS –9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS –2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD –0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH55030-TB.
3 PSAT is dened as IG = 0.72 mA.
4 Drain Efciency = POUT / PDC
3CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Small Signal S-Parameters vs Frequency of
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA
Drain Efciency, Power and Gain vs Frequency of the
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA
0
2
4
6
8
10
12
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1
Frequency (GHz)
S21 (dB)
-25
-20
-15
-10
-5
0
5
S11 (dB)
S21
S11
40
50
60
70
Drain Efficiency (%), Power (dBm), Gain (dB)
CGH55030 - GaN HEMT C-Band Performance
Drain Efficiency, Power, and Gain vs Frequency
0
10
20
30
40
5.3 5.4 5.5 5.6 5.7 5.8 5.9 6
Drain Efficiency (%), Power (dBm), Gain (dB)
Frequency (GHz)
Gain (dB)
Psat (dBm)
Drain Efficiency (%)
4CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55030F2/CGH55030P2
VDD = 28 V, IDQ = 250 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency
of the CGH55030F2/CGH55030P2
VDD = 28 V, IDQ = 250 mA
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C
MAG (dB)
K Factor
Minimum Noise Figure (dB)
Noise Resistance (Ohms)
5CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 8.0 – j12.4 14.1 – j12.6
5650 8.7 - j13.1 14.7 – j11.7
5800 8.4 - j14.0 15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-TB demonstration
amplier and are not source and load pull data derived from the transistor.
CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source Z Load
G
S
20
25
30
Power Dissipation (W)
CGH40025F CW Power Dissipation De-rating Curve
0
5
10
15
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature (°C)
Note 1
6CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH55030-TB Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
R1 RES, 1/16W, 0603, 1%, 562 OHMS 1
R2 RES, 1/16W, 0603, 1%, 22.6 OHMS 1
C2 CAP, 0.3pF, +/-0.05pF, 0402, ATC600L 1
C16 CAP, 33 UF, 20%, G CASE 1
C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1
C8 CAP 10UF 16V TANTALUM 1
C9 CAP, 0.4pF, +/-0.05pF, 0603, ATC600S 1
C1 CAP, 1.2pF, +/-0.1pF, 0603, ATC600S 1
C6,C13 CAP,200 PF,0603 PKG, 100 V 2
C4,C11 CAP, 10.0pF,+/-5%, 0603, ATC600S 2
C5,C12 CAP, 39pF, +/-5%, 0603, ATC600S 2
C7,C14 CAP, 330000PF, 0805, 100V, TEMP STABILIZ 2
J3,J4 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
J1 HEADER RT>PLZ .1CEN LK 5POS 1
- PCB, RO4350B, Er = 3.48, h = 20 mil 1
-CGH55030 1
CGH55030-TB Demonstration Amplier Circuit
7CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH55030-TB Demonstration Amplier Circuit Schematic
CGH55030-TB Demonstration Amplier Circuit Outline
(CGH55030F)
8CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH55030
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.917 -157.22 12.62 91.45 0.018 7.56 0.458 -158.97
600 MHz 0.916 -161.92 10.57 87.33 0.018 4.70 0.465 -160.93
700 MHz 0.916 -165.46 9.07 83.78 0.018 2.41 0.472 -162.19
800 MHz 0.916 -168.28 7.94 80.58 0.018 0.51 0.478 -163.04
900 MHz 0.916 -170.61 7.05 77.64 0.017 -1.12 0.485 -163.64
1.0 GHz 0.916 -172.60 6.33 74.88 0.017 -2.55 0.493 -164.09
1.1 GHz 0.917 -174.33 5.74 72.25 0.017 -3.82 0.500 -164.45
1.2 GHz 0.917 -175.88 5.24 69.73 0.017 -4.94 0.508 -164.77
1.3 GHz 0.918 -177.28 4.82 67.30 0.017 -5.95 0.516 -165.06
1.4 GHz 0.918 -178.57 4.46 64.94 0.017 -6.84 0.525 -165.36
1.5 GHz 0.919 -179.78 4.14 62.65 0.016 -7.63 0.533 -165.67
1.6 GHz 0.919 179.09 3.87 60.41 0.016 -8.31 0.542 -165.99
1.7 GHz 0.920 178.01 3.62 58.22 0.016 -8.90 0.550 -166.35
1.8 GHz 0.921 176.98 3.40 56.07 0.016 -9.39 0.559 -166.73
1.9 GHz 0.921 175.99 3.21 53.97 0.015 -9.77 0.568 -167.14
2.0 GHz 0.922 175.03 3.03 51.90 0.015 -10.06 0.577 -167.59
2.1 GHz 0.923 174.09 2.87 49.87 0.015 -10.24 0.585 -168.07
2.2 GHz 0.924 173.17 2.73 47.87 0.014 -10.31 0.594 -168.57
2.3 GHz 0.924 172.27 2.60 45.91 0.014 -10.27 0.602 -169.11
2.4 GHz 0.925 171.39 2.47 43.97 0.014 -10.12 0.610 -169.67
2.5 GHz 0.926 170.51 2.36 42.07 0.014 -9.85 0.619 -170.26
2.6 GHz 0.926 169.65 2.26 40.19 0.013 -9.46 0.626 -170.88
2.7 GHz 0.927 168.79 2.16 38.34 0.013 -8.95 0.634 -171.52
2.8 GHz 0.928 167.93 2.08 36.52 0.013 -8.31 0.642 -172.17
2.9 GHz 0.928 167.08 1.99 34.72 0.013 -7.54 0.649 -172.85
3.0 GHz 0.929 166.24 1.92 32.94 0.013 -6.65 0.656 -173.55
3.2 GHz 0.930 164.54 1.78 29.45 0.012 -4.49 0.670 -175.00
3.4 GHz 0.931 162.85 1.66 26.05 0.012 -1.85 0.683 -176.50
3.6 GHz 0.932 161.14 1.55 22.72 0.012 1.19 0.695 -178.06
3.8 GHz 0.933 159.42 1.46 19.46 0.012 4.55 0.706 -179.66
4.0 GHz 0.933 157.68 1.38 16.27 0.012 8.08 0.716 178.70
4.2 GHz 0.934 155.91 1.31 13.12 0.012 11.64 0.726 177.02
4.4 GHz 0.934 154.11 1.24 10.03 0.013 15.08 0.735 175.30
4.6 GHz 0.935 152.28 1.18 6.97 0.013 18.26 0.743 173.56
4.8 GHz 0.935 150.41 1.13 3.95 0.014 21.09 0.750 171.78
5.0 GHz 0.935 148.49 1.08 0.96 0.015 23.50 0.756 169.97
5.2 GHz 0.935 146.53 1.04 -2.00 0.016 25.48 0.762 168.12
5.4 GHz 0.935 144.52 1.00 -4.96 0.017 27.02 0.768 166.24
5.6 GHz 0.935 142.45 0.97 -7.90 0.018 28.12 0.773 164.32
5.8 GHz 0.934 140.31 0.94 -10.84 0.020 28.83 0.777 162.36
6.0 GHz 0.934 138.12 0.91 -13.79 0.021 29.18 0.781 160.36
Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
9CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Product Dimensions CGH55030F (Package Type — 440166)
Product Dimensions CGH55030P (Package Type — 440196)
10 CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
919.407.5302
Ryan Baker
Marketing
Cree, RF Components
919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
919.407.5639