a. A. $9014 TRANSISTOR(NPN) TO-92 Plastic-Encapsulate Transistors FEATURES oo i TO-92 ! 1.EMITTER ! 2.BASE | 3.COLLECTOR | 123 Ts, Tstg: -55T to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25TC unless otherwise specified) Coltector-base breakdown voitage ViBR)CBO Ic= 100 A, te=0 50 Vv Coliector-emitter breakdown voltage V(BR)CEO Ic= 0.1 mA, le=0 45 Vv Emitter-base breakdown voitage V(BR)JEBO le= 100 u A, Ic=0 5 Vv Collector cut-off current Icao Vcs= 50 V, le=0 0.1 vA Collector cut-off current Iceo Vce= 35 V, la=0 0.1 BA Emitter cut-off current leso Ves= 3 V, Ic=0 0.1 BA DC current gain HFE(1) Vce= 5 V, lo= 1 mA 60 1000 Collector-emitter saturation voltage VcEsat Ic= 100 mA, ts= 5 mA 0.3 Vv Base-emitter saturation voltage VeEsat tc= 100 mA, la= 5 mA 1 Vv Vce= 5 V, c= 10 mA Transition frequency fr 150 MHz f =30MHz Rank A B Cc D Range 60-150 100-300 200-600 400-1000 148 Typical Characteristics ic [mA], COLLECTOR CURRENT Vee sat. Vce SAT [mV], SATURATION VOLTAGE 1000 10 ie = 160 uA = 140 . je = 120 UA fa = 100 UA Ip = 80 UA is = 60 UA = 40 10 20 30 40 Vee [], COLLECTOR-EMITTER VOLTAGE Static Characteristic i) = ee Vee sat 4 10 1 ic [mA], COLLECTOR CURRENT Base-Emitter Saturation Voltage | lc = 20 Ia 06 1000 Collector-Emitter Saturation Voltage hre, DC CURRENT GAIN 10 f:{MHz], CURRENT GAIN BANDWIDTH PRODUCT $9014 Vee = 5V T 40 400 1000 Ic MA}, COLLECTOR CURRENT DC current Gain $000 | Vce = 5V t ' 0 19 100 1000 lc [MA], COLLECTOR CURRENT Current Gain Bandwidth Product 149