PDTA124XT,215 - NXP - Datasheet.Directory

1. Product proﬁle

1.1 General description

PNP Resistor-Equipped Transistors (RET) family.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

1.3 Applications

1.4 Quick reference data

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Rev. 07 — 11 August 2005 Product data sheet

Table 1: Product overview

Type number Package NPN complement

Philips JEITA JEDEC

PDTA124XE SOT416 SC-75 - PDTC124XE

PDTA124XEF SOT490 SC-89 - PDTC124XEF

PDTA124XK SOT346 SC-59A TO-236 PDTC124XK

PDTA124XM SOT883 SC-101 - PDTC124XM

PDTA124XS[1] SOT54 SC-43A TO-92 PDTC124XS

PDTA124XT SOT23 - TO-236AB PDTC124XT

PDTA124XU SOT323 SC-70 - PDTC124XU

■Built-in bias resistors ■Reduces component count

■Simpliﬁes circuit design ■Reduces pick and place costs

■100 mA output current capability

■Digital applications ■Cost-saving alternative for BC857 series

in digital applications

■Controlling IC inputs ■Switching loads

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - −50 V

IOoutput current (DC) - - −100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 1.7 2.1 2.6

Product data sheet Rev. 07 — 11 August 2005 2 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

2. Pinning information

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

SOT54

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54A

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54 variant

1 input (base)

2 output (collector)

3 GND (emitter)

SOT23; SOT323; SOT346; SOT416; SOT490

1 input (base)

2 GND (emitter)

3 output (collector)

SOT883

1 input (base)

2 GND (emitter)

3 output (collector)

001aab347

006aaa148

001aab348

006aaa148

001aab447

006aaa148

006aaa144

sym003

1R1

Transparent

top view

sym003

1R1

Product data sheet Rev. 07 — 11 August 2005 3 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

3. Ordering information

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 4: Ordering information

Type number Package

Name Description Version

PDTA124XE SC-75 plastic surface mounted package; 3 leads SOT416

PDTA124XEF SC-89 plastic surface mounted package; 3 leads SOT490

PDTA124XK SC-59A plastic surface mounted package; 3 leads SOT346

PDTA124XM SC-101 leadless ultra small plastic package; 3 solder lands;

body 1.0 × 0.6 × 0.5 mm SOT883

PDTA124XS[1] SC-43A plastic single-ended leaded (through hole) package;

3 leads SOT54

PDTA124XT - plastic surface mounted package; 3 leads SOT23

PDTA124XU SC-70 plastic surface mounted package; 3 leads SOT323

Table 5: Marking codes

Type number Marking code[1]

PDTA124XE 31

PDTA124XEF 31

PDTA124XK 44

PDTA124XM DK

PDTA124XS TA124X

PDTA124XT *47

PDTA124XU *44

Product data sheet Rev. 07 — 11 August 2005 4 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - −50 V

VCEO collector-emitter voltage open base - −50 V

VEBO emitter-base voltage open collector - −7V

VIinput voltage

positive - +7 V

negative - −40 V

IOoutput current (DC) - −100 mA

ICM peak collector current - −100 mA

Ptot total power dissipation Tamb ≤ 25 °C

SOT416 [1] - 150 mW

SOT490 [1] [2] - 250 mW

SOT346 [1] - 250 mW

SOT883 [2] [3] - 250 mW

SOT54 [1] - 500 mW

SOT23 [1] - 250 mW

SOT323 [1] - 200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Product data sheet Rev. 07 — 11 August 2005 5 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

7. Characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT416 [1] - - 833 K/W

SOT490 [1] [2] - - 500 K/W

SOT346 [1] - - 500 K/W

SOT883 [2] [3] - - 500 K/W

SOT54 [1] - - 250 K/W

SOT23 [1] - - 500 K/W

SOT323 [1] - - 625 K/W

Table 8: Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =−50 V; IE=0A - - −100 nA

ICEO collector-emitter cut-off

current VCE =−30 V; IB=0A - - −1µA

VCE =−30 V; IB=0A;

Tj= 150 °C--−50 µA

IEBO emitter-base cut-off

current VEB =−5 V; IC=0A - - −120 µA

hFE DC current gain VCE =−5 V; IC=−5mA 80 - -

VCEsat collector-emitter

saturation voltage IC=−10 mA;

IB=−0.5 mA --−150 mV

VI(off) off-state input voltage VCE =−5 V; IC=−100 µA- −0.8 −0.5 V

VI(on) on-state input voltage VCE =−0.3 V; IC=−2mA −2−1.1 - V

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 1.7 2.1 2.6

Cccollector capacitance VCB =−10 V;IE=i

e=0A;

f=1MHz --3pF

Product data sheet Rev. 07 — 11 August 2005 6 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

VCE = −5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = −0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = −5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3. On-state input voltage as a function of collector

current; typical values Fig 4. Off-state input voltage as a function of collector

current; typical values

IC (mA)

−10−1−102

−10−1

006aaa198

102

103

hFE

(1)

(3)

(2)

006aaa199

IC (mA)

−10−1−102

−10−1

−102

−103

VCEsat

(mV)

−10

(1)

(2)

(3)

006aaa200

IC (mA)

−10−1−102

−10−1

−103

−104

VI(on)

(mV)

−102

(1)

(2)

(3)

006aaa201

IC (mA)

−10−2−10−1−10−1

−103

−104

VI(off)

(mV)

−102

(1)

(2)

(3)

Product data sheet Rev. 07 — 11 August 2005 7 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

8. Package outline

Fig 5. Package outline SOT416 (SC-75) Fig 6. Package outline SOT490 (SC-89)

Fig 7. Package outline SOT346 (SC-59A/TO-236) Fig 8. Package outline SOT883 (SC-101)

Fig 9. Package outline SOT54 (SC-43A/TO-92) Fig 10. Package outline SOT54A

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45 0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

98-10-23Dimensions in mm

1.7

1.5

0.8

0.6

1.7

1.5

0.95

0.75

0.2

0.1

0.33

0.23

30.5

0.3

04-11-11Dimensions in mm

3.0

2.5 1.7

1.3

0.26

0.10

1.9

0.50

0.35

1.3

1.0

3.1

2.7

0.6

0.2

03-04-03Dimensions in mm

0.62

0.55

0.47 0.50

0.46

0.65

0.20

0.12

0.30

0.22

0.30

0.22

1.02

0.95

0.35

04-11-16Dimensions in mm

5.2

5.0 14.5

12.7

4.8

4.4

4.2

3.6 0.45

0.38

0.48

0.40

1.27 2.54

04-06-28Dimensions in mm

5.2

5.0 14.5

12.7

4.8

4.4

4.2

3.6 0.45

0.38

0.48

0.40

2.54

5.08

3 max

Product data sheet Rev. 07 — 11 August 2005 8 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Fig 11. Package outline SOT54 variant Fig 12. Package outline SOT23 (TO-236AB)

Fig 13. Package outline SOT323 (SC-70)

05-01-10Dimensions in mm

5.2

5.0 14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

2.5

max

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0 1.35

1.15

1.3

0.4

0.3 0.25

0.10

Product data sheet Rev. 07 — 11 August 2005 9 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

9. Packing information

[1] For further information and the availability of packing methods, see Section 15.

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 5000 10000

PDTA124XE SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135

PDTA124XEF SOT490 4 mm pitch, 8 mm tape and reel - -115 - -

PDTA124XK SOT346 4 mm pitch, 8 mm tape and reel -115 - - -135

PDTA124XM SOT883 2 mm pitch, 8 mm tape and reel - - - -315

PDTA124XS SOT54 bulk, straight leads - - -412 -

SOT54A tape and reel, wide pitch - - - -116

tape ammopack, wide pitch - - - -126

SOT54 variant bulk, delta pinning - - -112 -

PDTA124XT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235

PDTA124XU SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135

Product data sheet Rev. 07 — 11 August 2005 10 of 12

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PDTA124X_SER_7 20050811 Product data sheet - - PDTA124X_SERIES_6

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

•Table 6 “Limiting values”: typing error for value VEBO emitter-base voltage corrected

•Table 6 “Limiting values”: typing error for value VI positive input voltage corrected

•Table 8 “Characteristics”: Vi(on) redeﬁned to VI(on) on-state input voltage

•Table 8 “Characteristics”: Vi(off) redeﬁned to VI(off) off-state input voltage

•Figure 1,2,3 and 4: added

•Section 9 “Packing information”: added

•Section 14 “Trademarks”: added

PDTA124X_SERIES_6 20040804 Product speciﬁcation - 9397 750 13654 PDTA124X_SERIES_5

PDTA124X_SERIES_5 20040407 Product speciﬁcation - 9397 750 13013 PDTA124X_SERIES_4

PDTA124X_SERIES_4 20030414 Product speciﬁcation - 9397 750 11041 PDTA124XE_3

PDTA124XEF_2

PDTA124XE_3 19990521 Product speciﬁcation - 9397 750 05851 PDTA124XE_2

PDTA124XE_2 19981125 Product speciﬁcation - 9397 750 04128 PDTA124XE_1

PDTA124XE_1 19971215 Product speciﬁcation - 9397 750 03074 -

PDTA124XEF_2 19990525 Preliminary

speciﬁcation - 9397 750 05852 PDTA124XEF_1

PDTA124XEF_1 19981116 Preliminary

speciﬁcation - 9397 750 04645 -

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Product data sheet Rev. 07 — 11 August 2005 11 of 12

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 11 August 2005

Document number: PDTA124X_SER_7

Published in The Netherlands

Philips Semiconductors PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

16. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

15 Contact information . . . . . . . . . . . . . . . . . . . . 11