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©2013 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
December 2013
FGH40N60SMD_F085
600V, 40A Field Stop IGBT
Features
• Maximum Junction Temper ature : TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Qualified to Automotive Requirements of AEC-Q101
General Description
Using Novel Field Stop IGBT Technology , Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where
low conduction and switching losses are essential.
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, SMPS,PFC, UPS
Absolute Maximum Ratings
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC80 A
Collector Current @ TC = 100oC40 A
ICM (1) Pulsed Collector Current 120 A
IFDiode Forward Current @ TC = 25oC40 A
Diode Forward Current @ TC = 100oC20 A
IFM(1) Pulsed Diode Maximum Forward Current 120 A
PDMaximum Power Dissipation @ TC = 25oC 349 W
Maximum Power Dissipation @ TC = 100oC 174 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
G
E
C
ECG
COLLECTOR
(FLANGE)
Symbol Parameter Ratings Units
RθJC(IGBT) Thermal Resistance, Junction to Case 0.43 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case 1.8 oC/W
RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 45 oC/W
(2)
Symbol Parameter Typ. Units
2www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Package Marking and Ordering Information
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Notes:
1:Repetitive rating: Pulse width limited by max junction temperature.
2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method
environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements.
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package.
Device Marking Device Package Packing Type Qty per Tube
FGH40N60SMD FGH40N60SMD_F085 TO-247 Tube 30ea
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 - - V
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250uA -0.6-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250
μA
ICES at 80%*BVCES, 175oC - - 800
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.92.5V
IC = 40A, VGE = 15V,
TC = 175oC-2.1- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 1880 2500 pF
Coes Output Capacitance - 180 240 pF
Cres Reverse Transfer Capacitance - 50 65 pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
-1824ns
trRise Time - 28 36.4 ns
td(off) Turn-Off Delay Time - 110 143 ns
tfFall Time - 13.2 18.5 ns
Eon Turn-On Switching Loss - 0.92 1.2 mJ
Eoff Turn-Off Switching Loss - 0.3 0.39 mJ
Ets Total Switching Loss - 1.22 1.59 mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
- 16.7 23.8 ns
trRise Time - 27 35.1 ns
td(off) Turn-Off Delay Time - 116 151 ns
tfFall Time - 56.5 81 ns
Eon Turn-On Switching Loss - 1.47 1.91 mJ
Eoff Turn-Off Switching Loss - 0.73 0.95 mJ
Ets Total Switching Loss - 2.20 2.86 mJ
3www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
QgTotal Gate Charge VCE = 400V, IC = 40A,
VGE = 15V
- 119 180 nC
Qge Gate to Emitter Charge - 13 20 nC
Qgc Gate to Collector Charge - 58 90 nC
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 20A TC = 25oC- 2.3 2.8 V
TC = 175oC- 1.67 -
Erec Reverse Recovery Energy
IF =20A, dIF/dt = 200A/μs
TC = 175oC - 48.9 - uJ
trr Diode Reverse Recovery Time TC = 25oC - 36 47 ns
TC = 175oC- 110 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 46.8 61 nC
TC = 175oC - 470 -
4www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246810
0
20
40
60
80
100
120
8V
VGE= 20V
TC = 25oC
15V
12V 10V
Co lle c tor Curre nt, I C [A ]
Co lle ctor- E mitt er Volt age, VCE [V]
0246810
0
20
40
60
80
100
120
8V
VGE= 20V
TC = 17 5oC
15V
12V 10V
Collec tor Curre nt, I C [A]
Co lle ctor- E mitt er Volt a ge, VCE [V]
012345
0
20
40
60
80
100
120
C ommon Emitter
VGE = 15V
TC = 25 oC
TC = 17 5oC
Collector Cu rrent, I C [A]
Co lle ctor- E mitt er Vol ta ge, VCE [V]
024681012
0
20
40
60
80
100
120 Comm on Emit ter
VCE = 2 0V
TC = 2 5oC
TC = 1 75oC
Collector Current, IC [A]
Ga te-Emitter Voltag e,V GE [V]
25 50 75 100 125 150 175
1
2
3
40A
80A
IC = 20A
Co mmon Emi tter
VGE = 15V
C ollector-Emitt er Voltage, VCE [V]
C oll ector- EmitterC ase T emperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 2 0A
80A
40A
C ommon Emitter
TC = - 40 oC
Col lec tor-Emitt er Volta ge, VCE [V ]
Gate-Emitter Voltage, VGE [V]
5www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 2 0A
80A
40A
Common Emitter
TC = 2 5oC
Col lec tor-Emitt er Volta ge, VCE [V ]
Gate-Emitter Voltage, VGE [V]
48121620
0
4
8
12
16
20
IC =2 0A
80A
40A
Common Emitter
TC = 1 75 oC
Col lec tor-Emitt er Volta ge, VCE [V ]
Gate-Emitter Voltage, VGE [V]
110
50
100
1000
4000
C ommon Emitter
VGE = 0 V , f = 1MHz
TC = 2 5oC
Cres
Coes
Cies
Cap acitance [pF]
Colle ctor-Emit te r Volt a ge, VCE [V] 30
050100120
0
3
6
9
12
15
300V
C o mmo n Emitter
TC = 25oC
VCC = 200 V 400V
Gate-Em itter Voltage, VGE [V]
Gate Charge, Qg [nC]
1 10 100 1000
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25 oC
2. TJ ≤ 175oC
3. Single Pulse
10μs
100μs
Col le ctor Current, I c [A ]
Co lle ctor- Em it t er Volt a ge, VCE [V]
0 1020304050
1
10
100
Swi tc hing Time [ns]
Com mon Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 2 5oC
TC = 1 75oC
td(on)
tr
Ga t e R esi st ance , R G [Ω]
6www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0 1020304050
10
100
1000
10000
Sw itching Time [ns]
Com mon Em it t e r
VCC = 4 00V, VGE = 15V
IC = 4 0A
TC = 25oC
TC = 175oC td(off)
tf
Ga t e R esi st ance , R G [Ω]
20 40 60 80
1
10
100
Com mon Emitt er
VGE = 15V , RG = 6 Ω
TC = 2 5oC
TC = 1 75 oC
tr
td(on)
S wi tching Time [ns]
Collector Current, IC [A ]
20 40 60 80
1
10
100
1000
Comm on Emitter
VGE = 1 5V , RG = 6 Ω
TC = 25oC
TC = 175oC
td(off)
tf
S wi tc hing Time [ns]
Colle c tor C urren t , I C [A]
0 1020304050
0.1
1
10
100 Com mon Emitt er
VCC = 400V, VGE = 1 5V
IC = 4 0A
TC = 2 5oC
TC = 1 75 oC
Eon
Eoff
Sw itchi ng Loss [mJ]
Gate Resistance, RG [Ω]
20 40 60 80
0.1
1
10 Com mon Emit t e r
VGE = 15 V, RG = 6 Ω
TC = 25oC
TC = 175oC
Eon
Eoff
S witching Loss [mJ]
Collector Current, IC [A]
1
1
10
100
200
Saf e Operati ng A r ea
VGE = 1 5V, TC ≤ 175oC
Coll ector Cur rent, IC [A ]
Collector-Emitter Voltage, VCE [V]
7www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Typical Performance Characteristics
Figure 20. Load Current Vs. Frequency
Figure 21. Forward Characteristics Figure 22. Reverse Current
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
0123
1
10
100
TC = 1 75 oC
TC = 25 oC
Forw ard Volta ge, VF [V]
Forw ard Current, IF [A ]
0 200 400 600
0.01
0.1
1
10
100
1000
TC = 2 5oC
TC = 10 0oC
TC = 1 75 oC
Reve rse Current ICES [uA ]
Collecto r to Em itter Vol tage, VCES [V]
0 5 10 15 20 25 30 35 40 45
0
100
200
300
400
500
600
di /d t = 100A /μs
di /dt = 200A /μs
TC = 2 5oC
TC = 1 75oC
Stored Recovery Charge, Qrr [nC]
Forwad Current, IF [A ]
0 5 10 15 20 25 30 35 40 45
0
50
100
150
200
TC = 25 oC
TC = 17 5oC di/dt = 10 0 A/μs
200A/μs
di /d t = 100A /μs
200A/μs
Reverse Recovery Time, trr [n s]
Forw ard Curr ent, I F [A]
Figure 19. Current Derating
0 255075100125150175
0
10
20
30
40
50
60
70
80
90
Col lector Current, IC [A]
Colle c tor- E mit te r C a s e tempe rature, T
C
[oC]
1k 10k 100k 1M
0
10
20
30
40
50
60
70
80
90
100
110
120
Tc = 75oC
Square Wave
TJ < 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6W
Collector Current, IC [A]
Switching Frequency, f [Hz]
Tc = 100oC
8www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Figure 25. Transient Thermal Impedance of IGBT
Figure 26.Transient Thermal Impedance of Diode
1E-5 1E-4 1E-3 0.01 0.1
1E-3
0.01
0.1
0.5
0.01
0.02
0.1
0.05
0.2
s ingl e puls e
The rmal Re sponse [Zt hjc]
R ectangu lar Pu lse Durat ion [sec]
Du ty Fact or, D = t1/t2
Pea k T j = P dm x Zthjc + TC
0.5
t1
PDM
t2
1E-5 1E-4 1E-3 0.01 0.1 1
0.01
0.1
1
2
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
9www.fairchildsemi.com
FGH40N60SMD_F085 Rev. C1
FGH40N60SMD_F085 600V 40A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
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