T4-LDS-0218-1, Rev. 1 (111513) ©2011 Microsemi Corporation Page 1 of 5
1N6638US, 1N6642US, 1N6643US
Availa ble on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
“D-5B” package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
“B” SQ-MELF
(D-5B) Package
Also available in:
“D” Package
(axial-leaded)
1N6638_42_43
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.
• Ultra fast recovery time.
• Very low capacitance.
• Metallurgically bonded.
• Non-cavity glass package.
• JAN, JANTX, JANTXV and JANS qualifications are av aila ble per MIL-PRF-19500/578.
• Replacem ent s for 1N414 8UR, 1N 4148UR-1, 1N4150UR-1, and 1N914UR.
• RoHS compliant devices available (commercial grade only).
APPLICATIONS / BENEFITS
• Small size for high density mounting (see package illustration).
• Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet: 10 Base T
Switching core driv er s
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
TJ and TSTG
-65 to +175
oC
Thermal Resi stan ce Jun cti on-to-End Cap
RӨJEC
40
oC/W
RӨJA
250
oC/W
Peak Forward Surge Current @ TA = +25
o
C
(Test pulse = 8.3 ms, half-sine wave.)
IFSM 2.5 A
Average Rectified Forward Current @ TA = +75
o
C
(Derate at 4.6 mA/°C Above TEC = + 110 °C)
IO 300 mA
Breakdown Voltage: 1N6638US
1N6642US
1N6643US
VBR 150
100
75
V
Working Peak Reverse Voltage: 1N6638US
1N6642US
VRWM 125
75
50
V
NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, i n still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); RΘJA with a defined PCB
thermal resistance condition included, is measured at IO = 300 mA.
T4-LDS-0218-1, Rev. 1 (111513) ©2011 Microsemi Corporation Page 2 of 5
1N6638US, 1N6642US, 1N6643US
MECHANICAL and PACKAGING
• CASE: Voidless hermetically sealed hard glass.
• TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request.
• MARKING: Body painted and alpha numeric.
• POLARITY: Cathode indicated by band.
• Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N6638 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise noted.
TYPE
NUMBER
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
MAXIMUM DC REVERSE CURRENT
IR1 IR2 IR3 IR4
REVERSE
RECOVERY
TIME
trr
(Note 1)
MAXIMUM
FORWARD
RECOVERY
V OLTAGE AND
TIME
IF=200mA, tr=1ns
MAXIMUM
JUNCTION
CAPACITANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
V
R
=
20 V
V
R
=V
RWM
V
R
=20 V
TA=
+150
o
C
V
R
=V
RWM
TA=
+150
o
C
VFRM tfr VR=0 V VR=1.5 V
V @ mA
V @ mA
nA
nA
µA
µA
ns
V
ns
pf
pf
1N6638US
0.8 V @ 10 mA
1.1 V @ 200 mA
35
500
50
100
4.5
5.0
20
2.5
2.0
1N6642US
0.8 V @ 10 mA
1.2 V @ 10 0 mA
25
500
50
100
5.0
5.0
20
5.0
2.8
1N6643US
0.8 V @ 10 mA
1.2 V @ 100 mA
50
500
75
100
6.0
5.0
20
5.0
2.8
NOTE: 1. Revers e Recovery Time Test Conditi ons – IF=IR=10 mA, IR(REC) = 1.0 mA, C= 3 pF, RL = 100 ohms.
T4-LDS-0218-1, Rev. 1 (111513) ©2011 Microsemi Corporation Page 3 of 5
1N6638US, 1N6642US, 1N6643US
GRAPHS
TA (oC) Ambient Temperature
FIGURE 1
Temperature – Current Derating
Time (s)
FIGURE 2
Maximum Thermal Impedance at TA = 55 oC
Sinewave Operation Maximum IO Rating (mA)
Thermal Impedance (oC/W)
T4-LDS-0218-1, Rev. 1 (111513) ©2011 Microsemi Corporation Page 4 of 5
1N6638US, 1N6642US, 1N6643US
GRAPHS (continued)
Time (s)
FIGURE 3
Maximum Thermal Impedance at TEC = 25 oC
Thermal Impedance (oC/W)
T4-LDS-0218-1, Rev. 1 (111513) ©2011 Microsemi Corporation Page 5 of 5
1N6638US, 1N6642US, 1N6643US
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. U-suffix parts are structurally identical to the US-suffix parts.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
DIM
INCH
MILLIMETERS
MIN
MAX
MIN
MAX
BD
0.070
0.085
1.78
2.16
ECT
0.019
0.028
0.48
0.71
BL
0.165
0.195
4.19
4.95
S 0.003 MIN. 0.08 MIN.