6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol S2N3634, L
S2N3635, L S2N3636, L
S2N3637, L Unit
Collector-Emitter Voltage VCEO 140 175 Vdc
Collector-Base Voltage VCBO 140 175 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Curren t IC1.0 Adc
Total Power Dissipation @ TA = +250C(
@ TC = +250C(2) PT1.0
5.0 W
W
Operating & Storage Junction Temp. Range
TJ, Tstg -65 to +200 0C
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless o therwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc S2N3634, L, S2N3635, L
S2N3636, L, S2N3637, L V(BR)CEO 140
175 Vdc
Collecto r-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc S2N3634, L, S2N3635, L ICBO 100
10 ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5 Vdc IEBO 50
10 ηAdc
µAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc ICEO 10 µAdc
S2N3634, L, S2N3635, L, S2N3636, L, S2N3637, L JAN SERIES
TECHNICAL DATA
S2N3634, S2N3635
S2N3636, S2N3637
TO-39 (TO-205AD)
S2N3634L, S2N3635L
S2N3636L, S2N3637L
TO-5
2N3634/ L, JTX, JTXV, JANS
2N3635/ L, JTX, JTXV, JANS
2N3636/ L, JTX, JTXV, JANS
2N3637/ L, JTX, JTXV, JANS
Processed per MIL-PRF-19500/357
PNP SILICON AMPLIFIER TRANSISTORS
MIL-PRF
QML
DEVICES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2
ELECTRICAL CHARACTERISTICS (con’ t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Tran sfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc S2N3634, L, S2N3636, L
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc S2N3635, L, S2N3637, L
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
hFE
hFE
25
45
50
50
30
55
90
100
100
60
150
300
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) 0.3
0.6 Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc VBE(sat) 0.65 0.8
0.9 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
hfe1.5
2.0 8.0
8.5
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
hfe 40
80 160
320
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
hje 100
200 600
1200
Ω
Ω
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz hoe 200 µs
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
Noise Figu re
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0 Ω f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF 5.0
3.0
3.0 dB
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc S2N3634, L, S2N3635, L
VCE = 130 Vdc, IC = 20 mAdc S2N3636, L, S2N3637, L
Test 2
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
