Rugged Power MOSFETs IRF244, IRF245, IRF246, IRF247 Avalanche-Energy-Rated N-Channel Power MOSFETs 14 A and 13A, 275 V and 250 V rpos(on) = 0.28 O and 0.3492 Features: ws Single pulse avalanche energy rated SOA is power-dissipation limited a Nanosecond switching speeds s Linear transfer characteristics High input impedance w 275, 250V ac rated - 120V ac line system operation The IRF244, IRF245, IRF246 and IRF247 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect tran- sistors designed for applications such as switching regu- lators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel package. ABSOLUTE-MAXIMUM RATINGS File Number 2209 N-CHANNEL ENHANCEMENT MODE D G s 92CS- 42658 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE ) GATE 92CS- 3780) JEDEC TO-204AA CHARACTERISTIC IRF244 IRF245 IRF246 IRF247 UNITS Drain-Source Voltage @ Vos 250 250 275 275 v Drain-Gate Voltage (Res = 20 kQ) a Vosr 250 250 275 275 Vv Continuous Drain Current Ip @ Te = 25C 14 13 14 13 A Continuous Drain Current lb @ Tc = 100C 8.8 8.0 8.8 8.0 A Pulsed Drain Current @) lom 56 52 56 52 A Gate-Source Voltage Vas +20 Vv Maximum Power Dissipation Po @ Te = 26C 125 Ww Linear Derating Factor 1.0 wre Single-Pulse Avalanche Energy Rating Eas 550 mj Operating Junction and Storage Temperature Ty, Tots -58 to +150 C Range Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) C 6-32Rugged Power MOSFETs IRF244, IRF245, IRF246, IRF247 ELECTRICAL CHARACTERISTICS, At Tc = 25C (Unless Otherwise Specified) CHARACTERISTIC TYPE |MIN. | TYP. |MAX. | UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss IRF246 275 _ _ v Vas = OV IRF247 IRF244 250 v lo = 250 pA IRF245 oe Gate Threshold Voitage Vas(th) ALL 2.0 - 4.0 v Vos = Vas, lo = 250 vA Gate-Source Leakage Forward lass ALL _ 500 nA Vas = 20V Gate-Source Leakage Reverse lass ALL _ |-500 nA Vos = 20V Zero-Gate Voltage Drain Current lpss ALL _ _ 250 HA Vos = Max. Rating, Vas = OV _ _ 1000 HA Vos = Max. Rating x 0.8, Vas = OV, Te = 125C On-State Drain Current (2) to(on) IRF244 14 A IRF246 Vos >> fofon) (on) Vv tov > lp(on) x ros(on) max., = IRF245 os oO os! as 13 _ _ A IRF247 Static Drain-Source On-State Tos(on) | IRF244 | @ - 0.20 | 0.28 a Resistance IRF246 Vas =10V, to = 10A IRF245 _ 0.24 | 0.34 a IRF247 Forward Transconductance (2) Ota ALL 6.7 10 S$ (WU) [Vos > lp(on) x ros(on) max., lo = 10 A Input Capacitance Cc ALL 11300] F eer - P Vas = OV, Vos = 25 V, f= 1.0 MHz Output Capacitance Coss ALL _ 320 - pF See Fig..19 ee Fig. Reverse Transfer Capacitance Cone ALL _ 69 - pF 9 Turn-On Delay Time ta(on) ALL _ 16 24 ns Von = 90 V, lo = 10 A, Zo = 4.72 Rise Time t ALL _ 67 103 ns See Fig. 17 Turn-Off Delay Time ta(off) ALL _ 53 8d ns (MOSFET switching times are essentially Fali Time tr ALL ~ 49 74 ns independent of operating temperature.) Total Gate Charge Qy Vas = 10 V, Ip = 22 A, Vos = 0.8 Max. Rating. ALL _ 39 59 nc ; ' (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially Gate-Source Charge Qos ALL - 6.6 9.9 nc independent of operating temperature.) Gate-Drain ((Miller} Charge Qe ALL 20 30 nc Internal Drain Inductance Lo ALL _ 45 _ nH Measured from the drain Modified MOSFET lead, 6 mm (0.25 in.) from symbol showing the package to center of die. internal device inductances. Internal Source Inductance Ls ALL _ 75 - nH Measured from the G source tead, 6 mm (0.25 in.) from package to source bonding pad. s THERMAL RESISTANCE Junction-to-Case Rac ALL - _ 1.0 C/W Case-to-Sink Recs ALL _ 0.5 _ C/W [Mounting surface flat, smooth, and greased. Junction-to-Ambient Rapa ALL _ 80 C/W_s[ Free air operation. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is IRF244 14 A Modified MOSFET symbol D (Body Diode) IRF246 showing the integral . IRF245 43 A reverse P-N junction rectifier. IRF247 / be Pulse Source Current isu IRF244 G _ 56 A (Body Diode) @ IRF246 IRF245 _ _ 52 A s IRF247 Diode Forward Voltage @ Veo ALL _ _ 1.8 v Te = 25C, Is = 14 A, Vas = OV Reverse Recovery Time ter ALL 150 | 300 | 640 ns Ts = 150C, Ir = 14 A, dir/dt = 100 A/ps Reverse Recovered Charge Qar ALL 1.6 3.4 7.2 uC Ty = 150C, le = 14 A, die/dt = 100 A/us Forward Turn-on Time ton g ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. () Ty = 25C to 150C. Pulse Test: Pulse width <= 300 ys. Duty Cycle = 2% @ Repetitive Rating: Pulse width limited by max. junction temperature See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 50 V, Starting Ty = 25C, L = 4.5 mH, Re = 25 Q, Peak |. = 14 A (See Figs. 14 & 15). 6-33Rugged Power MOSFETs IRF244, IRF245, IRF246, IRF247 6-34 ip, DRAIN CURRENT (AMPERES) ip, DRAIN CURRENT (AMPERES) o 25 50 78 100 125 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-a4104 Fig. 1 - Typical output characteristics. 2 4 8 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) & 10 9265-44106 Fig. 3 - Typical saturation characteristics. 3 g = N w o 2 a w 4 < z = w x - 2 3 n 10-4 10-3 1072 Vos > 50V 5| 80 wS PULSE TEST 2 4 6 8 10 Vag. GATE-TO-SOURCE VOLTAGE (VOLTS) 92GS-44105 Fig. 2 - Typical transfer characteristics. OPERATION IN THIS AREA LIMITED BY Rpsjon) a wi & ul a. = 4 IRF247 : nant B uw (4 5 & z @ 4 6 4 IRF244, IRF 246, SINGLE PULSE 1 5 0? 5 492? 5 403 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) 9265-44107 Fig. 4 - Maximum safe operating area. Pom NOTES: 1. DUTY FACTOR, 0 = ty/tg 2. PEAK Ty = Pom x Zthuc + Tc o.1 1 10 ty, RECTANGULAR PULSE DURATION (SECONDS) 92GS-44108 Fig. 5 - Maximum effective transient thermal impedance, junction- to-case vs. pulse duration.Rugged Power MOSFETs 2 3 a g < 3 3 S a z & r 5 oO 15 Ip. DRAIN CURRENT (AMPERES) 9268-44109 Fig. 6 - Typical transconductance vs. drain current. we 9 4 > 3 @ e z < 6 2 > o BREAKDOWN VOLTAGE (NORMALIZED) -60 -40 80 Ty, JUNCTION TEMPERATURE (C) 140 160 92GS-a4094 Fig. 8 - Breakdown voltage vs. temperature. Vgg = OV, t= 1 MHz gs + Cgd Cag SHORTED Crss = Cga Coss = Cas + Cgs Cga/Cgs + Cga = Cag + Coa = & we 9 @ E g a < 3 8 2 10 20 50 100 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92G58-44112 Fig. 10 - Typical capacitance vs. drain-to-source voltage. IRF244, IRF245, IRF246, IRF247 a we c w a = < e z w x ec > 3 z < a aw a x w > w 4 a 0.4 0.8 1.2 1.6 2.0 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) 9265-44110 Fig. 7 - Typical source-drain diode forward voltage. 1 8 Ip=i4aa Zz 30 z a a & 24 z oa ~ ww ON Z &5 1.8 a ad Be oo BZ 12 Lae Z a 3 | => 06 = 2 @ 0.0 Vas=10V =80 40-200 20 40 60 80 100 120 140 160 Ty, JUNCTION TEMPERATURE (C} 9268-44114 Fig. 9 - Normalized on-resistance vs. temperature. Vps = 125 V Vos = 50 Vos = a 2 ~ 2 wi 9 a EF a > w o c 2 9 9 r w E < a a Oo > oO 60 Qg, TOTAL GATE CHARGE {nC) 9265-44113, Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-35Rugged Power MOSFETs IRF244, IRF245, IRF246, IRF247 80S PULSE TEST Vag=10 w 9 = 2 a my z 3 ws 9 2 3 9 5 r z a = oO e 3 15 30 45 60 75 Ip, DRAIN CURRENT (AMPERES) 92GS-44114 Fig. 12 - Typical on-resistance vs. drain current. VARY tp TO OBTAIN REQUIRED PEAK I, Le Vgg =10V j | PL tp 92G8-44116 Fig. 14 - Unclamped energy test circuit. ADJUST R, TO OBTAIN SPECIFIED Ip B50 pocccee-n | PULSE | GENERATOR 1472 ' SOURCE IMPEDANCE 9268-44117 Fig. 16 - Switching time test circuit. 6-36 (RF246 a Dy 4 wi a. = < E = ia > o z = a 2 25 50 75 100 125 150 Tc, CASE TEMPERATURE (C) 9268-44915 Fig. 13 - Maximum drain current vs. case temperature. 9268-44109 Fig. 15 - Unclamped energy waveforms. CURRENT +Vos REGULATOR {ISOLATED SUPPLY} a ) SAME TYPE wv o> AS DUT BATTERY 1. o ) DUT j | 1. oS Onion nn 7 ~\A-O -Yos 'g = 'o CURRENT CURRENT SHUNT SHUNT 9268-44103 Fig. 17 - Gate charge test circuit.