Medium Power Transistor 2SA1036K Dimensions (Unit : mm) Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K. 2SA1036K 2.90.2 1.9 0.2 1.1 +0.2 -0.1 0.8 0.1 0.95 0.95 1.6 +0.2 -0.1 Structure Epitaxial planer type PNP silicon transistor 2.8 0.2 (2) (1) 0~0.1 0.4 +0.1 -0.05 All terminals have same dimensions Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Parameter ROHM : SMT3 EIAJ : SC-59 0.15 +0.1 -0.06 0.3~0.6 (3) (1) Emitter (2) Base (3) Collector Abbreviated symbol : H Denotes hFE PC MAX. must not be exceeded. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -40 - - V IC= -100A Collector-emitter breakdown voltage BVCEO -32 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -5 - - V IE= -100A Collector outoff current ICBO - - -1 A VCB= -20V Emitter cutoff current IEBO - - -1 A VEB= -4V VCE(sat) - - -0.6 V IC/IB= -300mA/-30mA hFE 120 - 390 - VCE= -3V, IC= -100mA Transition frequency fT - 200 - MHz Output capacitance Cob - 7 - pF Collector-emitter saturation voltage DC current transfer ratio Conditions VCE= -5V, IE=20mA, f=100MHz VCB= -10V, IE=0A, f=1MHz Packaging specifications Package Type hFE 2SA1036K QR Taping Code T146 Basic ordering unit (pieces) 3000 hFE values are classifies as follows. Item Q R hFE 120 to 270 180 to 390 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.B 2SA1036K Data Sheet Electrical characteristic curves -100 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -0.8mA -80 -0.7mA -0.6mA -60 -0.5mA -0.4mA -40 -0.3mA -0.2mA -20 -0.1mA 0 -1 -2 -3 -4 -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -400 -300 -200 -1.5mA -1.0mA -100 IB=0A 0 Ta=25 C 0 -5 -0.5mA IB=0A 0 -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propogation Fig.2 Grounded emitter output characteristics ( ) Fig.3 Ground emitter output characteristics ( ) Ta=25 C 500 VCE=-5V -3V -1V 200 100 50 -1 -2 -5 -10 -20 500 Ta=100 C 200 -0.3 -0.2 -0.1 Ta=100 C 25 C -0.05 -55 C -0.03 -0.02 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. TRANSITION FREQUENCY : fT (MHz) -0.5 -5 -2 -5 -10 -20 -50 -100 -200 -500 -1000 -0.5 -0.2 -0.1 IC/IB=50 -0.05 20 10 -0.02 -1 -2 1000 500 200 100 50 1 2 5 10 20 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/2 -50 -100 -200 -500 Fig.6 Collector emitter saturation voltage vs. collector current ( ) Ta=25 C VCE=-5V 0.5 -5 -10 -20 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ) lC/lB=10 -2 -1 Ta=25 C -1 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) -0.01 -1 -55 C 50 COLLECTOR CURRENT : IC (mA) -1.0 25 C 100 20 -50 -100 -200 -500 -1000 VCE=-3V 50 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -1mA BASE TO EMITTER VOLTAGE : VBE (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -500 -0.9mA Ta=25 C COLLECTOR CURRENT : IC (mA) VCE=-3V -200 Ta=100 C 25 C -100 -55 C -50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -500 Ta=25 C f=1MHz IE=0A IC=0A 100 50 20 10 5 2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collectur output capacitance vs. collector-base voltage. Emitter input capacitance vs. emitter -base voltage 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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