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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B
Medium Power Transistor
2SA1036K
Features Dimensions (Unit : mm)
1) Large IC.
ICMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage
operation.
3) Complements the 2SC2411K.
Structure
Epitaxial planer type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
−40 V
V
V
A
W
−32
−5
−0.5
0.2
150
−55 to +150
Symbol Limits Unit
P
C MAX.
must not be exceeded.
∗
∗
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
−40
−32
−5
−
−
120
−
−
−
−
−
−
−
−
−
200
−
−
−
−1
−1
390
−0.6
−
VIC= −100μA
IC= −1mA
IE= −100μA
VCB= −20V
VEB= −4V
VCE= −3V, IC= −100mA
IC/IB= −300mA/−30mA
VCE= −5V, IE=20mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
V
V
−
V
MHz
−7−pF
Typ. Max. Unit Conditions
μA
μA
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
hFE
T146
3000
QR2SA1036K
Type
hFE values are classifies as follows.
Item
h
FE
Q
120 to 270
R
180 to 390
Denotes h
FE
∗
±
±±
±
±
2SA1036K
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
0~0.1
2.8 0.2
1.6
0.3~0.6
1.1
0.8 0.1
0.15
0.4
2.9 0.2
1.9 0.2
0.950.95
+0.2
-
0.1
-
0.1
+0.2
+0.1
+0.1
-
0.05
-
0.06
(2)
(1)
(3)
Abbreviated symbol : H ∗
All terminals have
same dimensions
2/2
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B
Data Sheet 2SA1036K
Electrical characteristic curves
-0.20
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.
2
VCE
=
-
3
V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propogation
Ta=100 C
25 C
-
55 C
-1
-40
-80
-3
0
-20
-60
-100
0-2-4
-5
Ta=25 C
COLLECTOR CURRENT : I
C (mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
Fig.2 Grounded emitter output
characteristics (
Ι
)
I
B
=
0
A
-
0.1mA
-
0.2mA
-
0.3mA
-
0.4mA
-
0.5mA
-
0.6mA
-
0.7mA
-
0.8mA
-
0.9mA
-
1mA
-200
-400
-1
0
-5
0
-100
-300
-500
0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
V
)
Ta=25 C
Fig.3 Ground emitter output
characteristics (
ΙΙ
)
IB
=
0
A
-
0.5mA
-
1.0mA
-
1.5mA
-
2.0mA
-
2.5mA
-
3.0mA
-
3.5mA
-
4.0mA
-
4.5mA
-
5.0mA
500
1000
200
100
50
20
DC CURRENT GAIN : h
FE
-1 -2 -5 -10 -20 -50 -100 -200 -500-100
0
V
CE
=
-
5V
-
3V
-
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Ta=25 C
500
1000
200
100
50
20
-1 -2 -5 -10 -20 -50 -100 -200 -500 -100
0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
V
CE
=
-
3V
Ta
=
100 C
25 C
-
55 C
-0.1
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (
V
)
-1 -2 -5 -10 -20 -50 -100 -200 -500
-1
-0.5
-0.2
-0.05
-0.02
COLLECTOR CURRENT : IC
(
mA)
IC/IB
=
50
20
10
Fig.6 Collector emitter saturation
voltage vs. collector current (
Ι
)
Ta
=
25 C
-0.05
-0.03
-0.02
-0.01-1 -2 -5 -10 -20 -50 -100 -200 -500 -100
0
-0.5
-0.3
-0.2
-0.1
-1.0
lC/lB
=
10
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : IC
(
mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
Ta
=
100 C
25 C
-
55 C
5
0
0.5 20
50
100
200
500
1000
12 510
TRANSITION FREQUENCY : f
T
(
MHz)
EMITTER CURRENT : I
E
(
mA)
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=
25 C
V
CE
=
-
5V
COLLECTOR OUTPUT CAPACITANCE : Cob
p
EMITTER INPUT CAPACITANCE : Cib
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB (V
EMITTER TO BASE VOLTAGE : V
EB (V)
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltag
-5
-0.5 -20
2
5
10
50
100
-1 -2 -5 -10
20
Ta
=
25 C
f
=
1MHz
I
E
=
0A
I
C
=
0A
R0039
A
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