TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance TIP33 SYMBOL TIP34 VCBO 40 VCEO 40 VEBO IC ICM IB PD PD TJ, Tstg JA JC ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=30V (TIP33, TIP33A, TIP34, TIP34A) ICEO VCE=60V (TIP33B, TIP33C, TIP34B, TIP34C) ICES VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP33, TIP34) 40 BVCEO IC=30mA (TIP33A, TIP34A) 60 BVCEO IC=30mA (TIP33B, TIP34B) 80 BVCEO IC=30mA (TIP33C, TIP34C) 100 VCE(SAT) IC=3.0A, IB=0.3A VCE(SAT) IC=10A, IB=2.5A VBE(ON) VBE(ON) hFE hFE hfe fT VCE=4.0V, IC=3.0A VCE=4.0V, IC=10A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=0.5A, f=1.0kHz VCE=10V, IC=0.5A, f=1.0MHz 40 20 20 3.0 TIP33A TIP33B TIP33C TIP34A TIP34B TIP34C 60 80 100 60 80 100 5.0 10 15 3.0 3.5 80 -65 to +150 UNITS V V V A A A W W C 35.7 C/W 1.56 C/W MAX 0.7 0.7 0.4 1.0 1.0 UNITS mA mA mA mA V V V V V 4.0 1.6 3.0 V V V 100 MHz R1 (18-July 2013) TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (18-July 2013) w w w. c e n t r a l s e m i . c o m