FDMS8570S N-Channel PowerTrench(R) SyncFETTM 25 V, 60 A, 2.8 m Features General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFETTM Schottky Body Diode RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC = 25 C -Continuous TA = 25 C TJ, TSTG 12 V (Note 1a) 24 A 100 Single Pulse Avalanche Energy PD Units V 60 -Pulsed EAS Ratings 25 (Note 3) Power Dissipation TC = 25 C Power Dissipation TA = 25 C 45 48 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case TC = 25 C RJA Thermal Resistance, Junction to Ambient 2.6 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking 10OD Device FDMS8570S (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 Package Power 56 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM November 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 A IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V 100 nA 2.2 V 23 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.1 1.5 -3 mV/C VGS = 10 V, ID = 24 A 2.1 2.8 VGS = 4.5 V, ID = 22 A 2.4 3.1 VGS = 10 V, ID = 24 A, TJ = 125 C 2.9 3.9 VDS = 5 V, ID = 24 A 215 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 2825 pF 662 pF 94 pF 0.8 11 ns 4 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 13 V, ID = 24 A, VGS = 10 V, RGEN = 6 33 ns 3 ns VGS = 0 V to 10 V 42 nC VGS = 0 V to 4.5 V VDD = 13 V, ID = 24 A 22 nC 6.4 nC 4.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 24 A (Note 2) 0.8 1.2 IF = 24 A, di/dt = 300 A/s V 22 ns 19 nC NOTES: 1. RJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 45 mJ is based on starting TJ = 25 C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A. (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 2 www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25 C unless otherwise noted 100 4.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V VGS = 4.5 V 80 VGS = 3.5 V VGS = 3 V 60 VGS = 2.5 V 40 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 0.3 0.6 0.9 1.2 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 2.5 V 3.6 2.7 VGS = 3 V 1.8 0.9 VGS = 10 V 0.5 1.5 0 20 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 100 7 ID = 28 A 6 5 4 TJ = 125 oC 3 2 1 100 125 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 8 TJ = 25 oC 2 3 TJ, JUNCTION TEMPERATURE (oC) 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) 80 9 ID = 28 A VGS = 10 V -50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.5 VGS = 3.5 V VGS = 4.5 V VDS = 5 V 60 TJ = 25 oC TJ = 150 oC 40 20 TJ = -55 oC 0 1.0 1.5 2.0 2.5 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.01 0.0 3.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted 10000 ID = 28 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 13 V VDD = 10 V 4 VDD = 15 V Ciss 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 10 0.1 50 1 Figure 7. Gate Charge Characteristics 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 100 VGS = 10 V 80 VGS = 4.5 V 60 40 Limited by Package 20 10 100 o RJC = 2.6 C/W 0 25 1000 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 200 100 10000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 us 10 1 ms 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 1s SINGLE PULSE TJ = MAX RATED 10 s RJA = 125 oC/W DC o TA = 25 C 0.01 0.01 75 o tAV, TIME IN AVALANCHE (ms) 0.1 30 Figure 8. Capacitance vs Drain to Source Voltage 100 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 SINGLE PULSE R JA = 125 oC/W 1000 4 www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 1E-3 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 125 C/W 1E-4 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 5 www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25 C unless otherwise noted SyncFETTM Schottky body diode Characteristics Fairchild's SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8570S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 30 IDSS, REVERSE LEAKAGE CURRENT (A) -2 25 CURRENT (A) 20 di/dt = 300 A/s 15 10 5 0 -5 0 50 100 150 200 250 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFETTM body diode reverse leakage versus drain-source voltage Figure 14. FDMS8570S SyncFETTM body diode reverse recovery characteristic (c)2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D3 10 6 www.fairchildsemi.com FDMS8570S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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