FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
1
November 2014
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Power 56 D
DDDS
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Pin 1
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FDMS8570S
N-Channel PowerTrench® SyncFETTM
25 V, 60 A, 2.8 mΩ
Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Therm al Ch ara ct e ri st ic s
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 25 V
VGS Gate to Source Voltage 12 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 60 A -Continuous TA = 25 °C (Note 1a) 24
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 45 mJ
PDPower Dissipation TC = 25 °C 48 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case TC = 25 °C 2.6 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
10OD FDMS8570S Power 56 13’’ 12 mm 3000 units
FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Charac teristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25 °C 23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA
IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.5 2.2 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25 °C -3 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 24 A 2.1 2.8 mΩVGS = 4.5 V, ID = 22 A 2.4 3.1
VGS = 10 V, ID = 24 A, TJ = 125 °C 2.9 3.9
gFS Forward Transconductance VDS = 5 V, ID = 24 A 215 S
Ciss Input Capacitance VDS = 13 V, VGS = 0 V,
f = 1 MHz
2825 pF
Coss Output Capacitance 662 pF
Crss Reverse Transfer Capacitance 94 pF
RgGate Resistance 0.8 Ω
td(on) Turn-On Delay Time VDD = 13 V, ID = 24 A,
VGS = 10 V, RGEN = 6 Ω
11 ns
trRise Time 4ns
td(off) Turn-Off Delay Time 33 ns
tfFall Time 3ns
QgTotal Gate Charge VGS = 0 V to 10 V VDD = 13 V,
ID = 24 A
42 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V 22 nC
Qgs Gate to Source Gate Charge 6.4 nC
Qgd Gate to Drain “Miller” Charge 4.4 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 V
VGS = 0 V, IS = 24 A (Note 2) 0.8 1.2
trr Reverse Recovery Time IF = 24 A, di/dt = 300 A/μs 22 ns
Qrr Reverse Recovery Charge 19 nC
NOTES:
1. RθJA is determi ned with the device mounted on a FR-4 board using a spec ified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 45 mJ is based on starting TJ = 25 °C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A.
a) 50 °C/W when moun ted on a
1 in2 pad of 2 oz copper 125 °C/W when mounted on
a minimum pad of 2 oz
copper.
b)
G
DF
DS
SF
SS
G
DF
DS
SF
SS
FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0 0.3 0.6 0.9 1.2 1.5
0
20
40
60
80
100
VGS = 3.5 V
VGS = 3 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 10V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
020406080100
0.5
0.9
1.8
2.7
3.6
4.5
VGS = 2.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOU RC E ON-RESISTANC E
ID, DRA IN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 28 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
vs Junction Te mperature Figure 4.
2345678910
1
2
3
4
5
6
7
8
9
TJ = 125 oC
ID = 28 A
TJ = 25 oC
VGS, GA TE TO SOU RC E VO LTA G E (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE D U RA TION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% M A X
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO S O URC E V OLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FO RWA R D VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
4
Figure 7.
0 1020304050
0
2
4
6
8
10 ID = 28 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 13 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100 1000
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Unclam pe d I nd uc ti ve
Switching Capability Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
25 50 75 100 125 150
0
20
40
60
80
100
120
Limited by Package
VGS = 4.5 V
RθJC = 2.6 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
200
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RA TED
RθJA = 125 oC/W
TA = 25 oC
Figure 12.
10-4 10-3 10-2 10-1 100101100 1000
0.1
1
10
100
1000
10000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, P ULSE WIDT H (s)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
5
Figure 13. Junction-to-Ambient Transient Thermal Respon se Curve
10-4 10-3 10-2 10-1 100101100 1000
1E-4
1E-3
0.01
0.1
1
SINGLE PULSE
RθJA = 1 25 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS8570S N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D3 www.fairchildsemi.com
6
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 50 100 150 200 250
-5
0
5
10
15
20
25
30
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, REVER SE VO LTA G E (V)
Typical Characteristics (continued)
Figure 14. FDMS8570S SyncFETTM body
diode reverse recovery ch aracteristic Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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