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BAR90...
Silicon Deep Trench PIN Diodes
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ IF = 3 mA)
• Improved ON / OFF mode harmonic
distortion balance
• Pb-free (RoHS compliant) package
BAR90-02EL
BAR90-02ELS
BAR90-098LRH
21
4
D2
D1
3
21
Type Package Configuration LS(nH) Marking
BAR90-02ELS
BAR90-02EL
BAR90-098LRH
TSSLP-2-3
TSLP-2-19
TSLP-4-7
single, leadless
single, leadless
anti-parallel pair, leadless
0.2
0.4
0.4
J*
X
T9
* Marking of TSSLP-2-3 with underline
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR80 V
Forward current IF100 mA
Total power dissipation
TS ≤ 137 °C, BAR90-02ELS
TS ≤ 133°C, all others
Ptot
150
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
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BAR90...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR90-02ELS
All others
RthJS
≤ 90
≤ 65
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 80 - - V
Reverse current
VR = 60 V
IR- - 50 nA
Forward voltage
IF = 3 mA
IF = 100 mA
VF
0.75
-
0.81
0.9
0.87
1
V
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BAR90...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
0.25
0.3
0.19
0.18
0.35
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
35
5
4
-
-
-
kΩ
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
2
1.3
0.8
-
2.3
-
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 750 - ns
I-region width WI- 20 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 3 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.16
0.11
0.08
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
18.5
13.5
11.5
-
-
-
1BAR90-02EL in series configuration, Z = 50 Ω
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BAR90...
Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100 MHz
10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
IF
-40°C
+25 °C
+85 °C
+125 °C
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BAR90...
Forward current IF = ƒ (TS)
BAR90-02EL / -098LRH
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR90-02ELS
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
BAR90-02EL / -098LRH
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
°C
tp
-1
10
0
10
1
10
2
10
mA
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC=ƒ (tp) BAR90-02EL /-098LRH
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
2
10
mA
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BAR90...
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR90-02ELS
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAR90-02ELS
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR90-02EL in series configuration, Z = 50Ω
01234GHz 6
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|S21|²
10mA
3mA
1mA
0.5mA
Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR90-02EL in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|²
0 V
1 V
10 V
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BAR90...
Package TSLP-2-19
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BAR90...
Package TSLP-4-7
1
2
4
3
3
4
0.05 MAX.
+0.01
0.39
-0.03
1) Dimension applies to plated terminal
1
2
±0.05
0.8
0.45
±0.05
4x
0.25
1)
±0.035
±0.0351)
4 x 0.35
0.75±0.05
1.2±0.05
Bottom viewTop view
Pin 1 marking
1.05
4
1.45
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Stencil apertures
Copper Solder mask
1.18
0.28
0.22
0.28
0.38
0.38
0.42
0.78
1.2
0.3
0.2
0.3
0.4
0.4
0.4
0.8
BAR90-07LRH
Type code
Pin 1 marking
Laser marking
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BAR90...
Package TSSLP-2-3
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BAR90...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
