2N3740A
PNP Silicon
Power Transistors
Features
• Medium-power amplifier applications
• With TO-66 package
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 7.0 V
ICP Peak Collector Current 10 A
IC Collector Current 4.0 A
PC Collector power dissipation 25 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=100mAdc, IB=0) 60 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=60Vdc, IE=0) --- 100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0) --- 0.5 mAdc
ON CHARACTERISTICS
hFE(1) Forward Current Transfer ratio
(IC=100mAdc, VCE=1.0Vdc) 40 --- ---
hFE(2) Forward Current Transfer ratio
(IC=250mAdc, VCE=1.0Vdc) 30 --- ---
hFE(3) Forward Current Transfer ratio
(IC=500mAdc, VCE=1.0Vdc) 20 --- ---
hFE(4) Forward Current Transfer ratio
(IC=1.0Adc, VCE=1.0Vdc) 10 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=125mAdc) --- 0.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=250mAdc,VCE=1.0Vdc) --- 1.0 Vdc
fT Transition Frequency
(VCE=10Vdc, IC=100mAdc,
f=1.0MHZ) 3.0 --- MHZ
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .531 .571 13.5 14.5
B --- .728 --- 18.5
C .250 .340 6.35 8.63
D .035 .043 0.90 1.10
E --- .122 --- 3.10
F .050 .079 1.27 2.00
G .190 .210 4.83 5.33
H .122 3.10
K .360 .413 9.15 10.50
L .540 13.70
U .898 .913 22.80 23.20
V .150 .165 3.80 4.20
TO-66
A
E
D
C
K
H
V UL
G B
1
2
PIN 1. BASE
PIN 2. EMITTER
F
CASE. COLLECTOR
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30
