COMPUTER DIODE JAN, JANTX & JANTXV 1N4153 150mA Switching Diode FEATURES DESCRIPTION Metallurgical Bond This device is particularly suited to Qualified to MIL-S-19500/337 applications where tightly controlled Planar Passivated Chip forward characteristics and fast recovery DO-35 Package time are important. Non-JAN Available ABSOLUTE MAXIMUM RATINGS, AT 25C Reverse Breakdown Voltage 0... ccccccseeseenesseeetietsiiesncsnesssotseneasseesiesnnessesniecssees TV Peak Working Voltage ....... . SOV Average Output Current . 150mA Surge Current, 1pS@e occ ccccccccscsssseessssssesssseessssessssecssssesesssnvecssnsseeeneesseneeesnmesesnesssesessaee 2.0A Operating Temperature Range 65C to +200C Storage Temperature Range 65C to +200C MECHANICAL SPECIFICATIONS J, JTX & JTXV 1N4153 iL 12/79 630 aa UNITRODE ELECTRICAL SPECIFICATIONS (at 25C unless noted) JAN, JANTX & JANTXV 1N4153 Ve I Vez Ves Ve4 Ves Veg Limit I, == 100 wAdc 1, == 250 wAde |, = 1 mAde |p =2mAdc |, = 10 mAdc 1, == 20 mAde Min 0.490 Vdc 0.530 Vdc 0.590 Vde 0.620 Vde 0.700 Vdc 0.740 Vde Max 0.550 Vde 0.590 Vdc 0.670 Vdc 0.700 Vdc 0.810 Vde 0.880 Vdc Reverse lee c t,, Breakdown Ip Vp = 50V Va =0 1p = Ip = 10 mAdc Voltage Limit V, = 50V T, =150C f = 1 MHz R, = 100 ohms ip == 5.0 pAdc Min _- _ _ _ 75V Max 0.05 wAde 50 wAdc 2.0 pF 4ns _ Reverse Voltage vs. Reverse Current Forward Voltage vs. Forward Current 0.001 1000 002 T, = 65C 5 005 a 2 _ 0.01 E 100 =z 5 5 .0s z 5 & Go gS 2 x 2 5 os eos & 10 = w S 2 @ 2 | 10 ; 3 +5 _ 10 20 2 50 al 100 106203 4 5 6 7 8 9 101.12.2131415 140 130 120 110 100 90 80 70 60 50 40 30 20 10 O V, FORWARD VOLTAGE (V) Vv, REVERSE VOLTAGE (V) (% OF PIV) Production Inspection Lot *100 Percent Process LR h Mate ial Formed at . Conditioning 2 Pact teria! | _ > Final J | 1. High-Temp Storage | . %, ory Assembly 2. Temp Cycling rocessing Operation 3. Hermetic Seal Tests *100 Percent Burn-in Inspection Tests 1, Measurement of to Specified Parameters Verify LTPD