SIEMENS BCR 192 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=22kQ, Ro=47kQ) PS0S5161 Type Marking |Ordering Code [Pin Configuration Package BCR 192 WPs Q62702-C2265 |1=B |2=E [3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vceo 50 Vv Collector-base voltage Vospo 50 Emitter-base voltage Vepo 10 Input on Voltage Vicon) 30 DC collector current le 100 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature Tj 150 C Storage temperature Tstg - 65... + 150 Thermal Resistance Junction ambient =) Rina < 350 KAW Junction - soldering point Aus $240 1) Package mounted on peb 40mm x 40mm x 1.5mm / Bem? Cu Semiconductor Group 731 11.96 SIEMENS BCR 192 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. _ |max. DC Characteristics Collector-emitter breakdown voltage Vipr)ceo Vv Io = 100 YA, Ig =0 50 - - Collector-base breakdown voltage ViBR)ICBO lo = 10 UA, fp =0 50 - - Collector cutoff current IoBpo nA Vop = 40 V, Ie =0 - - 100 Emitter cutoff current lego yA Veg = 10V, ig =0 - - 227 DC current gain hee - Ilo =5 MA, Voge =5V 70 - - Collector-emitter saturation voltage 1) | Voesat Vv Ig =10 mA, fg=0.5 mA - - 0.3 Input off voltage Vicott} lo = 100 PA, Vop =5V 0.5 - 1.2 Input on Voltage Vion) Ilo =2MA, Vog = 0.3 V 0.8 - 2.5 Input resistor Ay 15 22 29 kQ Resistor ratio Ay/Re 0.42 0.47 0.52 - AC Characteristics Transition frequency fr MHz lo = 10 MA, Veg =5 V, f= 100 MHz - 200 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t< 300us; D < 2% Semiconductor Group 732 11.96 SIEMENS BCR 192 DC Current Gain hg = f (Ic) Vee = 5V (common emitter configuration) 103 | 10? 101 10 10 190 190 mA e 'y Input on Voltage Vion) = f(/c) Vcg = 0.3V (common emitter configuration) e Yon Semiconductor Group Collector-Emitter Saturation Voltage Voesat = Alc), hee = 20 102 10 0.0 a2 0.4 06 Vv 1.0 _r Voeeat Input off voltage Vigotp = f(/c) Voge = 5V (common emitter configuration) pe Yeon 733 11.96 SIEMENS BCR 192 Total power dissipation Pio; = f (Ta*; Ts) * Package mounted on epoxy mw 150 XY a \ \ 0 0 20 40 60 80 100 120 C_150 a Ty s Permissible Pulse Load Ainss = (tp) ci i | En Coin i cI o HH Semiconductor Group Permissible Pulse Load Promax / Piotoc = {fp) 105 [ie en ae 101 ne aT it ZT ams oo {TTT 11.96